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CY7C0851V25

产品描述SRAM
产品类别存储    存储   
文件大小193KB,共6页
制造商Cypress(赛普拉斯)
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CY7C0851V25概述

SRAM

CY7C0851V25规格参数

参数名称属性值
包装说明,
Reach Compliance Codecompliant
Base Number Matches1

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851V25
52V25
ADVANCE INFORMATION
CY7C0851V25
CY7C0852V25
2.5V 64K/128K x 36
Sync Dual-Port Static RAM
Features
• True Dual-Ported memory cells that allow simultaneous
access of the same memory location
• Sync. Pipelined 4.5 Megabit devices
— 64K x 36 organization (CY7C0851V25)
— 128K x 36 organization (CY7C0852V25)
Pipelined output mode allows fast 100-MHz operation
0.18-micron CMOS for optimum speed/power
High-speed clock to data access: 5 ns (max.)
2.5V Low operating power
— Active = 150 mA (typical)
Functional Description
The CY7C0851V25/CY7C0852V25 is a 4.5-Megabit pipelined
synchronous true dual-port Static RAM. This is a high-speed,
low-power 2.5V CMOS dual-port static RAM. Two ports are
provided, permitting independent, simultaneous access for
reads from any location in memory. A particular port can write
to a certain location while the other port is reading that location
simultaneously. The result of writing to the same location by
more than one port at the same time is undefined. Registers
on control, address, and data lines allow for minimal set-up
and hold time.
During a read operation, data is registered for decreased cycle
time. Clock to data valid t
CD2
= 5 ns. Each port contains a burst
counter on the input address register. After externally loading
the counter with the initial address the counter will self-incre-
ment the address internally (more details to follow). The inter-
nal write pulse width is independent of the duration of the R/W
input signal. The internal write pulse is self-timed to allow the
shortest possible cycle times.
A HIGH on CE0 or LOW on CE1 for one clock cycle will power
down the internal circuitry to reduce the static power consump-
tion. One cycle is required with chip enables asserted to reac-
tivate the outputs.
Counter enable inputs are provided to stall the operation of the
address input and utilize the internal address generated by the
internal counter for fast interleaved memory applications. A
port’s burst counter is loaded when the port’s address strobe
(ADS) and (CNTEN) signals are LOW. When the port’s counter
enable (CNTEN) is asserted and the ADS is deasserted, the
address counter will increment on each LOW to HIGH transi-
tion of that port’s clock signal. This will read/write one word
from/into each successive address location until CNTEN is
deasserted. The counter can address the entire memory array
and will loop back to the start. Counter reset (CNTRST) is used
to reset the unmasked portion of the burst counter to 0s. A
counter-mask register is used to control the counter wrap. The
counter and mask register operations are described in more
detail in the following sections.
New features added to the CY7C0851V25/CY7C0852V25 in-
clude: readback of burst-counter internal address value on ad-
dress lines, counter-mask registers to control the counter
wrap-around and counter interrupt (CNTINT) flags, readback
of mask register value on address lines, retransmit functional-
ity, interrupt flags for message passing, JTAG for boundary
scan, and asynchronous Master Reset.
— Standby = 10 mA (typical)
• HSTL class 1 I/O (0.75 Vref)
• Counter wraparound control
— Internal mask register controls counter wraparound
— Counter-Interrupt flags to indicate wraparound
— Memory Block Retransmit Operation
Counter readback on address lines
Mask register readback on address lines
Interrupt flags for message passing
Global Master reset
Width and Depth expansion capabilities
Dual Chip Enables on both ports for easy depth expan-
sion
Separate byte enables on both ports
Commercial and Industrial temperature ranges
IEEE 1149.1 JTAG boundary scan
172-ball BGA (1-mm pitch) (15 mm x 15 mm x 0.51 mm)
For the most recent information, visit the Cypress web site at www.cypress.com
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
October 17, 2000

CY7C0851V25相似产品对比

CY7C0851V25 CY7C0852V25-100BBI CY7C0852V25-100BBC CY7C0851V25-100BBC
描述 SRAM Dual-Port SRAM, 128KX36, 5ns, CMOS, PBGA172, 15 X 15 MM, 0.51 MM HEIGHT, 1 MM PITCH, FBGA-172 Dual-Port SRAM, 128KX36, 5ns, CMOS, PBGA172, 15 X 15 MM, 0.51 MM HEIGHT, 1 MM PITCH, FBGA-172 Dual-Port SRAM, 64KX36, 5ns, CMOS, PBGA172, 15 X 15 MM, 0.51 MM HEIGHT, 1 MM PITCH, FBGA-172
包装说明 , 15 X 15 MM, 0.51 MM HEIGHT, 1 MM PITCH, FBGA-172 15 X 15 MM, 0.51 MM HEIGHT, 1 MM PITCH, FBGA-172 15 X 15 MM, 0.51 MM HEIGHT, 1 MM PITCH, FBGA-172
Reach Compliance Code compliant compliant compliant compliant
Base Number Matches 1 1 1 1
零件包装代码 - BGA BGA BGA
针数 - 172 172 172
ECCN代码 - 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 - 5 ns 5 ns 5 ns
JESD-30 代码 - S-PBGA-B172 S-PBGA-B172 S-PBGA-B172
长度 - 15 mm 15 mm 15 mm
内存密度 - 4718592 bit 4718592 bit 2359296 bit
内存集成电路类型 - DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 - 36 36 36
功能数量 - 1 1 1
端子数量 - 172 172 172
字数 - 131072 words 131072 words 65536 words
字数代码 - 128000 128000 64000
工作模式 - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
组织 - 128KX36 128KX36 64KX36
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 - LBGA LBGA LBGA
封装形状 - SQUARE SQUARE SQUARE
封装形式 - GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
并行/串行 - PARALLEL PARALLEL PARALLEL
认证状态 - Not Qualified Not Qualified Not Qualified
座面最大高度 - 1.25 mm 1.25 mm 1.25 mm
标称供电电压 (Vsup) - 2.5 V 2.5 V 2.5 V
表面贴装 - YES YES YES
技术 - CMOS CMOS CMOS
端子形式 - BALL BALL BALL
端子节距 - 1 mm 1 mm 1 mm
端子位置 - BOTTOM BOTTOM BOTTOM
宽度 - 15 mm 15 mm 15 mm
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