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CY62157CV25/30/33
512K x 16 Static RAM
Features
• Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive: –40°C to 125°C
• High speed
— 55 ns and 70 ns availability
•
Voltage range:
— CY62157CV25: 2.2V–2.7V
— CY62157CV30: 2.7V–3.3V
— CY62157CV33: 3.0V–3.6V
• Ultra-low active power
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 5.5 mA @ f = f
max
(70 ns speed)
• Low standby power
• Easy memory expansion with CE
1
, CE
2
and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
(MoBL™) in portable applications such as cellular telephones.
The devices also have an automatic power-down feature that
significantly reduces power consumption by 80% when
addresses are not toggling. The device can also be put into
standby mode reducing power consumption by more than 99%
when deselected (CE
1
HIGH or CE
2
LOW or both BLE and
BHE are HIGH). The input/output pins (I/O
0
through I/O
15
) are
placed in a high-impedance state when: deselected (CE
1
HIGH or CE
2
LOW), outputs are disabled (OE HIGH), both
Byte High Enable and Byte Low Enable are disabled (BHE,
BLE HIGH), or during a write operation (CE
1
LOW and CE
2
HIGH and WE LOW).
Writing to the device is accomplished by taking Chip Enable 1
(CE
1
) and Write Enable (WE) inputs LOW and Chip Enable 2
(CE
2
) HIGH. If Byte Low Enable (BLE) is LOW, then data from
I/O pins (I/O
0
through I/O
7
), is written into the location
specified on the address pins (A
0
through A
18
). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O
8
through
I/O
15
) is written into the location specified on the address pins
(A
0
through A
18
).
Reading from the device is accomplished by taking Chip
Enable 1 (CE
1
) and Output Enable (OE) LOW and Chip
Enable 2 (CE
2
) HIGH while forcing the Write Enable (WE)
HIGH. If Byte Low Enable (BLE) is LOW, then data from the
memory location specified by the address pins will appear on
I/O
0
to I/O
7
. If Byte High Enable (BHE) is LOW, then data from
memory will appear on I/O
8
to I/O
15
. See the truth table at the
back of this data sheet for a complete description of read and
write modes.
The CY62157CV25/30/33 are available in a 48-ball FBGA
package.
Functional Description
[1]
The CY62157CV25/30/33 are high-performance CMOS static
RAMs organized as 512K words by 16 bits. These devices
feature advanced circuit design to provide ultra-low active
current. This is ideal for providing More Battery Life™
Logic Block Diagram
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DATA IN DRIVERS
ROW DECODER
512K × 16
RAM Array
2048 × 4096
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
BHE
WE
OE
BLE
CE
2
CE
1
Power -down
Circuit
BHE
BLE
CE
2
CE
1
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05014 Rev. *E
•
3901 North First Street
•
San Jose
,
CA 95134
•
408-943-2600
Revised September 24,
CY62157CV25/30/33
Product Portfolio
Power Dissipation
Operating (I
CC
) mA
V
CC
Range
Product
CY62157CV25
CY62157CV30
Range
Industrial
Industrial
Industrial
Industrial
Automotive
CY62157CV33
Industrial
Industrial
Automotive
3.0V
3.3V
3.6V
2.7V
3.0V
3.3V
Min.
2.2V
Typ.
[2]
2.5V
Max.
2.7V
55 ns
70 ns
55 ns
70 ns
70 ns
55 ns
70 ns
70 ns
1.5
1.5
3
3
7
5.5
15
12
Speed
f = 1 MHz
Typ.
[2]
1.5
1.5
1.5
1.5
Max.
3
3
3
3
7
5.5
7
5.5
f = f
max
Typ.
[2]
Max.
15
12
15
12
8
8
8
10
10
10
25
25
70
30
30
80
Standby (I
SB2
)
µA
Typ.
[2]
6
Max.
25
Pin Configurations
[2, 3, 4]
FBGA (Top View)
1
2
3
4
5
6
BLE
I/O
8
I/O
9
V
SS
V
CC
I/O
14
I/O
15
A
18
OE
BHE
I/O
10
I/O
11
I/O
12
I/O
13
NC
A
8
A
0
A
3
A
5
A
17
DNU
A
14
A
12
A
9
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
A
2
CE
1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
CE
2
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
A
B
C
D
E
F
G
H
Pin Definitions
Name
Input
Input/Output
Input/Control
Input/Control
Input/Control
Input/Control
Ground
A
0
-A
18
. Address Inputs
I/O
0
-I/O
15
. Data lines. Used as input or output lines depending on operation
WE.
Write Enable, Active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is
conducted.
CE
1
. Chip Enable 1, Active LOW.
CE
2
. Chip Enable 2, Active HIGH.
OE.
Output Enable, Active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as
outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins
Vss.
Ground for the device
Definition
Power Supply
Vcc.
Power supply for the device
Notes:
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25°C.
3. NC pins are not connected on the die.
4. E3 (DNU) can be left as NC or V
SS
to ensure proper application.
Document #: 38-05014 Rev. *E
Page 2 of 12
CY62157CV25/30/33
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential ...–0.5V to V
ccmax
+ 0.5V
DC Voltage Applied to Outputs
in High-Z State
[5]
....................................–0.5V to V
CC
+ 0.3V
DC Input Voltage
[5]
.................................–0.5V to V
CC
+ 0.3V
Output Current into Outputs (LOW) .............................20 mA
Device
Range
CY62157CV25 Industrial
CY62157CV30 Industrial
CY62157CV33 Industrial
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA
Operating Range
Ambient
Tempera-
ture[T
A
]
[6]
V
CC
–40°C to +85°C 2.2V – 2.7V
–40°C to +85°C 2.7V – 3.3V
–40°C to +85°C 3.0V – 3.6V
Automotive –40°C to +125°C 2.7V – 3.3V
Automotive –40°C to +125°C 3.0V – 3.6V
Electrical Characteristics
Over the Operating Range
CY62157CV25-55
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
GND < V
I
< V
CC
Output Leakage Current GND < V
O
< V
CC
,
Output Disabled
V
CC
Operating Supply
Current
Automatic CE
Power-Down Current—
CMOS Inputs
Automatic CE
Power-Down Current—
CMOS Inputs
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= 2.7V
I
OUT
= 0 mA
CMOS Levels
Test Conditions
I
OH
= –0.1 mA
I
OL
= 0.1 mA
V
CC
= 2.2V
V
CC
= 2.2V
1.8
–0.3
–1
–1
7
1.5
6
Min. Typ.
[2]
2.0
0.4
V
CC
+
0.3V
0.6
+1
+1
15
3
25
1.8
–0.3
–1
–1
5.5
1.5
6
CY62157CV25-70
Max. Unit
V
0.4
V
CC
+
0.3V
0.6
+1
+1
12
3
25
µA
V
V
V
µA
µA
mA
2.0
Max. Min. Typ.
[2]
I
SB1
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = f
max
(Address and Data Only),
f = 0 (OE,WE,BHE and BLE)
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 2.7V
I
SB2
Electrical Characteristics
Over the Operating Range
CY62157CV30-55
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
GND < V
I
< V
CC
Industrial
Automotive
Output Leakage Current GND < V
O
< V
CC
, Industrial
Output Disabled Automotive
V
CC
Operating Supply
Current
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= 3.3V
I
OUT
= 0 mA
CMOS Levels
–1
7
1.5
+1
15
3
Test Conditions
I
OH
= –1.0 mA
I
OL
= 2.1 mA
V
CC
= 2.7V
V
CC
= 2.7V
2.2
–0.3
–1
Min. Typ.
[2]
2.4
0.4
V
CC
+
0.3V
0.8
+1
2.2
–0.3
–1
–10
–1
–10
5.5
1.5
CY62157CV30-70
Max. Unit
V
0.4
V
CC
+
0.3V
0.8
+1
+10
+1
+10
12
3
V
V
V
µA
µA
µA
µA
mA
2.4
Max. Min. Typ.
[2]
Notes:
5. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
6. T
A
is the “Instant-On” case temperature.
Document #: 38-05014 Rev. *E
Page 3 of 12
CY62157CV25/30/33
Electrical Characteristics
Over the Operating Range (continued)
CY62157CV30-55
Parameter
I
SB1
Description
Automatic CE
Power-Down Current—
CMOS Inputs
Test Conditions
CE
1
> V
CC
– 0.2V Industrial
or CE
2
< 0.2V
Automotive
V
IN
> V
CC
– 0.2V
or V
IN
< 0.2V,
f = f
max
(Address
and Data Only),
f = 0 (OE, WE,
BHE and BLE)
CE
1
> V
CC
– 0.2V Industrial
or CE
2
< 0.2V
Automotive
V
IN
> V
CC
– 0.2V
or V
IN
< 0.2V,
f = 0, V
CC
= 3.3V
Min. Typ.
[2]
8
25
CY62157CV30-70
Max. Unit
25
70
µA
µA
8
8
Max. Min. Typ.
[2]
I
SB2
Automatic CE
Power-Down Current—
CMOS Inputs
8
25
8
8
25
70
µA
µA
Electrical Characteristics
Over the Operating Range
CY62157CV33-55
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Test Conditions
V
CC
= 3.0V
V
CC
= 3.0V
2.2
–0.3
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output
Disabled
Industrial
Automotive
Industrial
Automotive
V
CC
= 3.6V
I
OUT
= 0 mA
CMOS Levels
7
1.5
10
15
3
30
–1
+1
–1
Min. Typ.
2.4
0.4
V
CC
+
0.3V
0.8
+1
2.2
–0.3
–1
–10
–1
–10
5.5
1.5
10
10
[2]
CY62157CV33-70
2.4
0.4
V
CC
+
0.3V
0.8
+1
+10
+1
+10
12
3
30
80
µA
µA
V
V
V
V
µA
µA
µA
µA
mA
Max. Min. Typ.
[2]
Max. Unit
Output HIGH Voltage I
OH
= –1.0 mA
Output LOW Voltage I
OL
= 2.1 mA
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Current
Output Leakage
Current
V
CC
Operating Supply f = f
MAX
= 1/t
RC
Current
f = 1 MHz
Automatic CE
Power-Down
Current—CMOS
Inputs
I
SB1
CE
1
> V
CC
– 0.2V or CE
2
< Industrial
0.2V
Automotive
V
IN
> V
CC
– 0.2V or V
IN
<
0.2V,
f = f
max
(Address and Data
Only),
f = 0 (OE,WE,BHE,and
BLE)
CE
1
> V
CC
– 0.2V or CE
2
< Industrial
0.2V
Automotive
V
IN
> V
CC
– 0.2V or V
IN
<
0.2V, f = 0, V
CC
= 3.6V
I
SB2
Automatic CE
Power-Down
Current—CMOS
Inputs
10
30
10
10
30
80
µA
µA
Thermal Resistance
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
[7]
Thermal Resistance
(Junction to Case)
[7]
Test Conditions
Still Air, soldered on a 3 x 4.5 inch, two-layer printed
circuit board
BGA
55
16
Unit
°C/W
°C/W
Note:
7. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05014 Rev. *E
Page 4 of 12
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