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“Standard”:
2.
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DATA SHEET
COMPOUND TRANSISTOR
CE1A3Q
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
The CE1A3Q is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter and zener diode
in collector to base as protect elements. This transistor is ideal for
actuator drives of OA equipments and electric equipments.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• On-chip zener diode for surge voltage absorption
• On-chip bias resistor: R1 = 1.0 kΩ, R2 = 10 kΩ
• Low power consumption during driving:
V
OL
= 0.12 V @V
I
= 5.0 V, I
C
= 0.5 A
• On-chip dumper diode for reverse cable
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
T
j
T
stg
Ratings
60±10
60±10
15
±2.0
±3.0
0.03
1.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
°C
°C
* PW
≤
10 ms, duty cycle
≤
50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Colletor to emitter voltage
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance 1
Input resistance 2
Turn-on time
Storage time
Fall time
Symbol
V
CEO(SUS)
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
t
on
t
stg
t
f
I
C
= 1.0 A
I
BI
=
−I
B2
= 10 mA
V
CC
= 20 V, R
L
= 20
Ω
Conditions
I
C
= 2.0 A, I
B
= 5.0 Ma, L = 6.0 mH
V
CB
= 40 V, I
E
= 0
V
CE
= 5.0 V, I
C
= 0.2 A
V
CE
= 5.0 V, I
C
= 1.0 A
V
CE
= 5.0 V, I
C
= 2.0 A
V
I
= 5.0 V, I
C
= 0.5 A
V
CE
= 12 V, I
C
= 100
µ
A
0.7
7.0
700
1000
500
1200
1700
1300
0.12
0.46
1.0
10.0
0.4
1.4
0.5
0.3
0.4
1.3
13.0
3000
MIN.
50
TYP.
60
100
MAX.
Unit
V
nA
−
−
−
V
V
kΩ
kΩ
µ
s
µ
s
µ
s
** Pulse test PW≤350
µ
s, duty cycle≤2 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16177EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
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