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CYTA4494DTR

产品描述Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8
产品类别分立半导体    晶体管   
文件大小308KB,共2页
制造商Central Semiconductor
下载文档 详细参数 选型对比 全文预览

CYTA4494DTR概述

Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8

CYTA4494DTR规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-G8
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
最大集电极电流 (IC)0.3 A
集电极-发射极最大电压400 V
配置SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)50
JESD-30 代码R-PDSO-G8
元件数量2
端子数量8
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN AND PNP
最大功率耗散 (Abs)2 W
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)20 MHz
Base Number Matches1

文档预览

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PRODUCT
announcement
New SOT-228 Surface Mount Dual Transistors
CYTA44D
CYT5551D
CYT5551HCD
8
7
6
5
CYTA4494D
8
7
6
5
1
2
3
4
1
2
3
4
Dual, Isolated NPN Transistors
Dual, Isolated
Complementary Transistors
features
Dual Transistors in the new SOT-228 eight (8) lead
SMD package
High Voltage and High Current Devices
Utilizes 50% less board space than two SOT-223
devices
Sample Devices
available
upon request.
description
The CYTA44D, CYTA4494D, CYT5551D, and
CYT5551HCD types are dual transistors packaged in
the new SOT-228 eight (8) lead SMD case. These
devices provide space saving over standard devices in
the SOT-223. Ideal for high voltage amplifier
applications.
selection guide
TYPE NO.
CONFIGURATION
BVCBO
(V)
MIN
BVCEO
*BVCES
(V)
MIN
BVEBO
(V)
MIN
ICBO @
*I
CEV @
(nA)
MAX
VCB
VCE
(V)
MIN
MAX
hFE
@ VCE
(V)
@ IC
(mA)
VCE(SAT)@
(V)
MAX
IC
(mA)
Cob
(pF)
MAX
fT
(MHz)
MIN
Case
Type
Dual, High Voltage
NPN
Transistors
8
7
6
5
CYTA44D
Dual, Isolated
NPN Transistor
1
2
3
4
450
400
6.0
100
400
50
200
10
10
0.40
1.0
7.0
20
SOT-228
Dual, High Voltage
Complementary NPN/PNP
Transistors
8
7
6
5
CYTA4494D
Dual, Isolated
Complementary
NPN & PNP
Transistor
1
2
3
4
450
400
6.0
100
350
50
200
10
10
0.40
1.0
7.0
20
SOT-228
Dual, High Voltage
NPN
Transistors
8
7
6
5
CYT5551D
Dual, Isolated
NPN Transistor
1
2
3
4
180
160
6.0
50
120
80
250
5.0
10
0.20
50
15
100
SOT-228
Dual, High Current, High Voltage
NPN
Transistors
8
7
6
5
CYT5551HCD
Dual, Isolated
NPN Transistor
1
2
3
4
180
160
6.0
50
120
80
250
5.0
10
0.20
50
15
100
SOT-228
145 Adams Avenue
Hauppauge
New York
11788
USA
Tel:(631) 435-1110
Fax:(631) 435-1824
www.centralsemi.com

CYTA4494DTR相似产品对比

CYTA4494DTR CYTA44DTR CYT5551DBK CYT5551HCDTR CYT5551DTR CYTA4494DBK CYT5551HCDBK CYTA44DBK
描述 Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8 Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8 Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8 Power Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8 Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8 Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8 Power Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8 Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, ROHS COMPLIANT PACKAGE-8
包装说明 SMALL OUTLINE, R-PDSO-G8 ROHS COMPLIANT PACKAGE-8 ROHS COMPLIANT PACKAGE-8 ROHS COMPLIANT PACKAGE-8 ROHS COMPLIANT PACKAGE-8 SMALL OUTLINE, R-PDSO-G8 ROHS COMPLIANT PACKAGE-8 ROHS COMPLIANT PACKAGE-8
针数 8 8 8 8 8 8 8 8
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.3 A 0.3 A 0.6 A 1 A 0.6 A 0.3 A 1 A 0.3 A
集电极-发射极最大电压 400 V 400 V 160 V 160 V 160 V 400 V 160 V 400 V
配置 SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) 50 50 80 80 80 50 80 50
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
元件数量 2 2 2 2 2 2 2 2
端子数量 8 8 8 8 8 8 8 8
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN AND PNP NPN NPN NPN NPN NPN AND PNP NPN NPN
最大功率耗散 (Abs) 2 W 2 W 2 W 2 W 2 W 2 W 2 W 2 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 20 MHz 20 MHz 100 MHz 100 MHz 100 MHz 20 MHz 100 MHz 20 MHz
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