CYT5551HCD
SURFACE MOUNT
DUAL, ISOLATED NPN HIGH CURRENT
SILICON TRANSISTORS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT5551HCD
type consists of two (2) isolated NPN high current
silicon transistors packaged in an epoxy molded
SOT-228 surface mount case. Manufactured by the
epitaxial planar process, this SUPERmini™ device
is ideal for high current applications.
MARKING CODE: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ
JA
-65 to +150
62.5
°C
°C/W
SYMBOL
VCBO
VCEO
VEBO
IC
PD
180
160
6.0
1.0
2.0
UNITS
V
V
V
A
W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
VCB=120V
VCB=120V, TA=100ºC
VBE=4.0V
IC=100µA
IC=1.0mA
IE=10µA
IC=10mA,
IC=50mA,
IC=10mA,
IB=1.0mA
IB=5.0mA
IB=1.0mA
80
80
30
10
100
15
180
160
6.0
0.15
0.20
1.00
1.00
250
50
50
50
UNITS
nA
µA
nA
V
V
V
V
V
V
V
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=1.0A
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
MHz
pF
R0 (15-March 2005)
Central
TM
CYT5551HCD
SURFACE MOUNT
DUAL, ISOLATED NPN HIGH CURRENT
SILICON TRANSISTORS
Semiconductor Corp.
SOT-228 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) EMITTER Q2
4) BASE Q2
5) COLLECTOR
6) COLLECTOR
7) COLLECTOR
8) COLLECTOR
Q2
Q2
Q1
Q1
MARKING CODE:
FULL PART NUMBER
R0 (15-March 2005)