CHP1237
KPCS CDMA
InGaP HBT Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.5
FEATURES
•
•
•
•
•
•
•
Small Profile (3 x 3 x 1 mm)
PFT
TM
50
Ω
Matched Module
High Linearity of -50 dBc
High PAE of 39%
InGaP HBT Technology
Low Quiescent Current of 55 mA
Single Positive Supply Voltage
APPLICATIONS
•
Korean PCS CDMA handsets
M12 Package
9 Pin 3 x 3 x 1 mm
Surface Mount Module
PRODUCT DESCRIPTION
CHP1237 is an InGaP HBT amplifier module
offering high performance for PCS CDMA wireless
handsets. It consists of a two-stage amplifier, 50
Ω
matching network for both input and output, and a
bias control circuit. It is packaged in a 3 x 3 x 1 mm
package using proprietary Passive-Free Technology
(PFT)
TM
. The package provides excellent electrical
stability and low thermal resistance.
V
CC
C6
2.7µF
C5
220pF
RF
IN
C4
27pF
1
2
CHP1237
3
9
8
7
5
6
RF
OUT
V
REF2
4
C7
1nF
V
REF1
C8
1nF
Figure 1: Block Diagram
08/2004
CHP1237
Table 1: Pad Description
PIN
1
2
3
4
5
6
7
8
9
NAME
V
CC
RF
IN
GND
V
REF2
V
REF1
GND
GND
RF
OUT
V
CC
DESCRIPTION
Supply Voltage
RF Input Signal
Ground
Reference Voltage
Reference Voltage
Ground
Ground
RF Output
Supply Voltage
2
PRELIMINARY DATA SHEET - Rev 1.5
08/2004
CHP1237
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
RF Input Power (P
IN
)
Supply Voltage (V
CC
)
Reference Voltage 1 (V
REF1
)
Reference Voltage 2 (V
REF2
)
Case Operating Temperature (T
C
)
Storage Temperature (T
STG
)
Soldering Temperature (T
S
)
MIN
-
-
-
-
- 30
- 55
-
MAX
10
6
3.4
3.4
100
125
240
UNIT
dB m
V
V
V
°C
°C
°C
COMMENTS
5 seconds
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation
is not implied under these conditions. Exposure to absolute ratings for extended periods of
time may adversely affect reliability.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
)
Reference Voltage 1 (V
REF1
)
Reference Voltage 2 (V
REF2
)
Operating Temperature (T
C
)
MIN
1750
+3.2
+2.95
+2.95
-30
TYP
-
+3.4
+3.00
+3.00
+25
MAX
1780
+4.2
+3.05
+3.05
+85
UNIT
MHz
V
V
V
°C
The device may be operated safely over these conditions; however, parametric
performance is guaranteed only over the conditions defined in the electrical
specifications.
PRELIMINARY DATA SHEET - Rev 1.5
08/2004
3
CHP1237
Table 4: Electrical Specifications
(T
C
= +25 °C, fo = 1765 MHz, V
CC
= 3.4 V, V
REF1
= 3.0 V,
V
REF2
= 3.0 V, (unless otherwise specified) )
PARAMETER
Gain
G
Gh
Gain Variation
Power-Added Efficiency
(1)
PAE
PAEH
Total Current (I)
Adjacent Channel Power Ratio
1.25 MHz offset
ACPR1L
ACPR1H
2.25 MHz Offset
ACPR2L
ACPR2H
Quiescent Current
Iqs (Shutdown Mode)
Iq
(3)
Noise in Receive Band
Harmonics
2fo
3fo
Spurious Output Level
Ruggedness - no damage
(5)
(4)
(2)
MIN
24
25.5
-
7.5
36
-
-
TYP
26.5
27.5
-
9
39
-
-
MAX
28
29.5
1.0
-
-
157
515
UNIT
COMMENTS
P
O
= 16 dB m
P
O
= 28 dB m
P
O
= 28 dBm over frequency
P
O
= 16 dB m
P
O
= 28 dB m
P
O
= 16 dB m
P
O
= 28 dB m
dB
dB
%
mA
-
-
-
-
-
45
-
-
-
-
10:1
-52
-50
-72
-59
1
55
-136
-
-
-
-
-49
-47
dB c
-60
-56
5
60
-133
-30
-30
-60
-
mA
mA
P
O
= 16 dB m
P
O
= 28 dB m
P
O
= 16 dB m
P
O
= 28 dB m
V
REF1
= 0 V, V
REF2
= 0 V, No RF
V
REF1
= 3 V, V
REF2
= 3 V, No RF
dBm/Hz P
O
= 28 dBm
P
O
= 28 dB m
P
O
= 28 dB m
VSWR < 6:1
P
O
= 28 dB m
dB c
dB c
VSWR
Notes:
(1) Includes the current at pins 1, 4, 5, and 9.
(2) ACPR is specified per IS95 as the ratio of adjacent power in 30 kHz BW to the total in-band power
(1.23 MHz BW).
(3) Includes the current at pins 1 and 9 (Vcc current).
(4) RxBn is measured at 80 MHz above the operating frequency (Fo).
(Measurement setup: RBW = 30 kHz, VBW = 30 kHz).
(5) All phases, time equals to 10 seconds.
Table 5: Power Mode Truth Table
POWER MODE
Shut Down
High Power
V
R E F1
0V
3V
V
R E F2
0V
3V
TYPICAL GAIN
<-40 dB
27.5 dB
4
PRELIMINARY DATA SHEET - Rev 1.5
08/2004
CHP1237
PERFORMANCE DATA
Figure 2: ACP1_U vs Po
(V
CC
= 3.4 V, V
REF1
= 3.0 V, V
REF2
= 3.0 V, F = 1.765 GHz)
-40.00
+25C
-30C
+85C
-45.00
-50.00
ACP1_U (dBc)
-55.00
-60.00
-65.00
-70.00
0.00
5.00
10.00
15.00
Pout (dBm)
20.00
25.00
30.00
Figure 3: ACP2_U vs Po
(V
CC
= 3.4 V, V
REF1
= 3.0 V, V
REF2
= 3.0 V, F = 1.765 GHz)
-50.00
+25C
-30C
+85C
-55.00
-60.00
ACP2_U (dBc)
-65.00
-70.00
-75.00
-80.00
0.00
5.00
10.00
15.00
Pout (dBm)
20.00
25.00
30.00
Figure 4: PAE vs Po
(V
CC
= 3.4 V, V
REF1
= 3.0 V, V
REF2
= 3.0 V, F = 1.765 GHz)
50.00
45.00
40.00
35.00
30.00
PAE %
+25C
-30C
+85C
25.00
20.00
15.00
10.00
5.00
0.00
15.00
17.00
19.00
21.00
23.00
Pout (dBm)
25.00
27.00
29.00
PRELIMINARY DATA SHEET - Rev 1.5
08/2004
5
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