CMLT3410 NPN
CMLT7410 PNP
CMLT3474 NPN/PNP
SURFACE MOUNT
DUAL LOW VCE(SAT)
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
These CENTRAL SEMICONDUCTOR dual devices
are low VCE(SAT) silicon transistors in a PICOmini™
surface mount package designed for small signal
general purpose amplifier and switching applications
requiring low collector emitter saturation voltage.
MARKING CODES: CMLT3410: C34
CMLT7410: C74
CMLT3474: C37
SOT-563 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
A
A
mW
°C
°C/W
40
25
6.0
1.0
1.5
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
ICBO
VCB=40V
100
IEBO
VEB=6.0V
100
BVCBO
IC=100µA
40
BVCEO
IC=10mA
25
BVEBO
IE=100µA
6.0
VCE(SAT)
IC=50mA, IB=5.0mA
25
30
50
VCE(SAT)
IC=100mA, IB=10mA
40
50
75
VCE(SAT)
IC=200mA, IB=20mA
80
95
150
VCE(SAT)
IC=500mA, IB=50mA
190
205
250
VCE(SAT)
IC=800mA, IB=80mA
290
320
400
360
400
450
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=800mA, IB=80mA
1.1
VBE(ON)
VCE=1.0V, IC=10mA
0.9
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
300
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz (CMLT3410)
6.0
10
Cob
VCB=10V, IE=0, f=1.0MHz (CMLT7410)
10
15
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
MHz
pF
pF
R3 (1-August 2011)
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