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CMLDM7003JETRTIN/LEAD

产品描述Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
产品类别分立半导体    晶体管   
文件大小728KB,共4页
制造商Central Semiconductor
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CMLDM7003JETRTIN/LEAD概述

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

CMLDM7003JETRTIN/LEAD规格参数

参数名称属性值
是否Rohs认证不符合
Reach Compliance Codeunknown
最大漏极电流 (Abs) (ID)0.28 A
FET 技术METAL-OXIDE SEMICONDUCTOR
工作模式ENHANCEMENT MODE
最高工作温度150 °C
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)0.35 W
表面贴装YES
Base Number Matches1

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CMLDM7003E
CMLDM7003JE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
DUAL N-CHANNEL
ENHANCEMENT-MODE
MOSFETS
w w w. c e n t r a l s e m i . c o m
SOT-563 CASE
FEATURES
• ESD protected up to 2kV
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM7003E
and CMLDM7003JE are dual N-Channel enhancement-
mode MOSFETs, manufactured by the N-Channel
DMOS Process, designed for high speed pulsed
amplifier and driver applications. The CMLDM7003E
utilizes the USA pinout configuration, while the
CMLDM7003JE utilizes the Japanese pinout
configuration. These special dual transistor devices
offer low drain-source on state resistance (rDS(ON))
and ESD protection up to 2kV.
MARKING CODES: CMLDM7003E: C73
CMLDM7003JE: C7J
SYMBOL
VDS
VDG
VGS
ID
IDM
PD
PD
PD
TJ, Tstg
Θ
JA
50
50
12
280
1.5
350
300
150
-65 to +150
357
UNITS
V
V
V
mA
A
mW
mW
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IGSSF, IGSSR
VGS=5.0V
50
IGSSF, IGSSR
VGS=10V
0.5
UNITS
nA
μA
μA
nA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
VSD
VGS=12V
VDS=50V, VGS=0
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=0, IS=115mA
VGS=1.8V, ID=50mA
VGS=2.5V, ID=50mA
VGS=5.0V, ID=50mA
VDS=10V, ID=200mA
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
1.0
50
50
0.49
1.6
1.3
1.1
200
5.0
50
25
1.2
1.4
2.3
1.9
1.5
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
Enhanced specification
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
2
R5 (8-June 2015)

CMLDM7003JETRTIN/LEAD相似产品对比

CMLDM7003JETRTIN/LEAD CMLDM7003ETRLEADFREE CMLDM7003ETRTIN/LEAD CMLDM7003JETR CMLDM7003JETRLEADFREE CMLDM7003JEBKTIN/LEAD CMLDM7003EBKTIN/LEAD
描述 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
是否Rohs认证 不符合 符合 不符合 符合 符合 不符合 不符合
Reach Compliance Code unknown compliant unknown compliant compliant unknown not_compliant
最大漏极电流 (Abs) (ID) 0.28 A 0.28 A 0.28 A 0.28 A 0.28 A 0.28 A 0.28 A
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大功率耗散 (Abs) 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W
表面贴装 YES YES YES YES YES YES YES
Base Number Matches 1 1 1 1 1 1 -

 
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