19-3985; Rev 3; 11/08
KIT
ATION
EVALU
BLE
AVAILA
Automatic RF MESFET Amplifier
Drain-Current Controllers
Features
♦
Dual Drain-Current-Sense Gain Amplifier
Preset Gain of 4
±0.5% Accuracy for Sense Voltages Between
75mV and 625mV (MAX11014)
♦
Common-Mode Sense-Resistor Voltage Range
0.5V to 11V (MAX11014)
5V to 32V (MAX11015)
♦
Low-Noise Output GATE Bias with ±10mA GATE
Drive
♦
Fast Clamp and Power-On Reset
♦
12-Bit DAC Controls MESFET GATE Voltage
♦
Internal Temperature Sensor/Dual Remote Diode
Temperature Sensors
♦
Internal 12-Bit ADC Measures Temperature and
Voltage
♦
Pin-Selectable Serial Interface
3.4MHz I
2
C-Compatible Interface
20MHz SPI-/MICROWIRE-Compatible Interface
General Description
The MAX11014/MAX11015 set and control bias condi-
tions for dual MESFET power devices found in point-to-
point communication and other microwave base
stations. The MAX11014 integrates complete dual ana-
log closed-loop drain-current controllers for Class A
MESFET amplifier operation, while the MAX11015 tar-
gets Class AB operation. Both devices integrate SRAM
lookup tables (LUTs) that can be used to store temper-
ature and drain-current compensation data.
Each device includes dual high-side current-sense
amplifiers to monitor the MESFET drain currents through
the voltage drop across the sense resistors in the 0 to
625mV range. External diode-connected transistors mon-
itor the MESFET temperatures while an internal tempera-
ture sensor measures the local die temperature of the
MAX11014/MAX11015. The internal DAC sets the volt-
ages across the current-sense resistors by controlling
the GATE voltages. The internal 12-bit SAR ADC digitizes
internal and external temperature, internal DAC voltages,
current-sense amplifier voltages, and external GATE volt-
ages. Two of the 11 ADC channels are available as gen-
eral-purpose analog inputs for analog system monitoring.
The MAX11014’s gate-drive amplifier functions as an
integrator for the Class A drain-current control loop
while the MAX11015’s gate-drive amplifier functions
with a gain of -2 for Class AB applications. The current-
limited gate-drive amplifier can be fast clamped to an
external voltage independent of the digital input from
the serial interface. Both the MAX11014 and the
MAX11015 include self-calibration modes to minimize
error over time, temperature, and supply voltage.
The MAX11014/MAX11015 feature an internal reference
and can operate from separate ADC and DAC external
references. The internal reference provides a well-regu-
lated, low-noise +2.5V reference for the ADC, DAC, and
temperature sensors. These integrated circuits operate
from a 4-wire 20MHz SPI™-/MICROWIRE™-compatible
or 3.4MHz I
2
C-compatible serial interface (pin-selec-
table). Both devices operate from a +4.75V to +5.25V
analog supply (2.8mA typical supply current), a +2.7V
to +5.25V digital supply (1.5mA typical supply current),
and a -4.5V to -5.5V negative supply (1.1mA supply
current). The MAX11014/MAX11015 are available in a
48-pin thin QFN package specified over the -40°C to
+105°C temperature range.
MAX11014/MAX11015
Ordering Information
PART
MAX11014BGTM+
MAX11015BGTM+*
PIN-PACKAGE
48 Thin QFN-EP**
48 Thin QFN-EP**
AMPLIFIER
Class A
Class AB
+
Denotes a lead-free package.
*Future
product—contact factory for availability.
**EP
= Exposed pad.
Note:
All devices are specified over the -40°C to +105°C operating
temperature range.
Pin Configuration and Typical Operating Circuit appear at end
of data sheet.
Applications
Cellular Base-Station RF MESFET Bias Controllers
Point-to-Point or Point-to-Multipoint Links
Industrial Process Control
SPI is a trademark of Motorola, Inc.
MICROWIRE is a trademark of National Semiconductor Corp.
________________________________________________________________
Maxim Integrated Products
1
For pricing delivery, and ordering information please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Automatic RF MESFET Amplifier
Drain-Current Controllers
MAX11014/MAX11015
ABSOLUTE MAXIMUM RATINGS
AV
DD
to AGND .........................................................-0.3V to +6V
DV
DD
to DGND.........................................................-0.3V to +6V
AGND to DGND.....................................................-0.3V to +0.3V
AV
SS
to AGND ...........................................................-0.3V to -6V
RCS1+, RCS1-, RCS2+, RCS2- to GATEV
SS
(MAX11014) ........................................................-0.3V to +13V
RCS1+, RCS1-, RCS2+, RCS2- to AGND
(MAX11015) ........................................................-0.3V to +34V
RCS1- to RCS1+.......................................................-6V to +0.3V
RCS2- to RCS2+.......................................................-6V to +0.3V
GATEV
SS
to AGND...................................................+0.3V to -6V
GATE1, GATE2 to AGND .....(GATEV
SS
- 0.3V) to (AV
DD
+ 0.3V)
DV
DD
to AV
DD
..........................................-0.3V to (AV
DD
+ 0.3V)
All Other Analog Inputs to AGND ............-0.3V to (AV
DD
+ 0.3V)
PGAOUT1, PGAOUT2 to AGND ..............-0.3V to (AV
DD
+ 0.3V)
SCLK/SCL, DIN/SDA,
CS/A0,
N.C./A2,
CNVST,
OPSAFE1,
OPSAFE2 to DGND.............................-0.3V to (DV
DD
+ 0.3V)
DOUT/A1, SPI/I2C, ALARM, BUSY
to DGND ..............................................-0.3V to (DV
DD
+ 0.3V)
Maximum Current into Any Pin............................................50mA
Continuous Power Dissipation (T
A
= +70°C)
48-Pin Thin QFN (derate 27.0mW/°C
above +70°C)..........................................................2162.2mW
Operating Temperature Range .........................-40°C to +105°C
Storage Temperature Range ...............................-60°C to 150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
GATEVSS
= V
AVSS
= -5.5V to -4.75V, V
AVDD
= +4.75V to +5.25V, V
DVDD
= +2.7V to V
AVDD
, external V
REFADC
= +2.5V, external
V
REFDAC
= +2.5V, C
REFADC
= C
REFDAC
= 0.1µF, V
OPSAFE1
= V
OPSAFE2
= 0, V
RCS1+
= V
RCS2+
= +5V, C
FILT1
= C
FILT3
= 1nF, C
FILT2
=
C
FILT4
= 1nF, V
AGND
= V
DGND
= 0, V
ADCIN0
= V
ADCIN1
= 0, V
ACLAMP1
= V
ACLAMP2
= -5V, T
J
= T
MIN
to T
MAX
, unless otherwise noted.
All typical values are at T
J
= +25°C.)
PARAMETER
Common-Mode Input Voltage
Range
Common-Mode Rejection Ratio
Input-Bias Current
Full-Scale Sense Voltage
Sense Voltage Range
Total Current Set Error
Current-Sense Settling Time
Saturation Recovery Time
CLASS AB INPUT CHANNEL
Untrimmed Offset
Offset Temperature Coefficient
Gain
Gain Error
19
0
4
0.1
%
Bits
Bits/
o
C
t
HSCS
SYMBOL
MAX11014
MAX11015
0.5V < V
RCS_+
< 11V for the MAX11014
5V < V
RCS_+
< 32V for the MAX11015
V
SENSE
< 100mV over the common-mode
range
V
SENSE
= V
RCS+
- V
RCS-
To within ±0.5% accuracy
To within ±2% accuracy
To within ±20% accuracy
V
SENSE
= 75mV
Settles to within ±0.5% of final value
Settles to within ±0.5% accuracy, from
V
SENSE
= 1.875V
75
20
2
±0.1
< 25
< 45
CONDITIONS
MIN
0.5
5
90
90
200
±2
625
625
625
625
±0.5
%
µs
µs
mV
TYP
MAX
11.0
32
UNITS
CURRENT-SENSE AMPLIFIER (Note 1)
V
RCS+
CMRR
I
RCS+
I
RCS-
V
SENSE
V
dB
µA
mV
2
_______________________________________________________________________________________
Automatic RF MESFET Amplifier
Drain-Current Controllers
ELECTRICAL CHARACTERISTICS (continued)
(V
GATEVSS
= V
AVSS
= -5.5V to -4.75V, V
AVDD
= +4.75V to +5.25V, V
DVDD
= +2.7V to V
AVDD
, external V
REFADC
= +2.5V, external
V
REFDAC
= +2.5V, C
REFADC
= C
REFDAC
= 0.1µF, V
OPSAFE1
= V
OPSAFE2
= 0, V
RCS1+
= V
RCS2+
= +5V, C
FILT1
= C
FILT3
= 1nF, C
FILT2
=
C
FILT4
= 1nF, V
AGND
= V
DGND
= 0, V
ADCIN0
= V
ADCIN1
= 0, V
ACLAMP1
= V
ACLAMP2
= -5V, T
J
= T
MIN
to T
MAX
, unless otherwise noted.
All typical values are at T
J
= +25°C.)
PARAMETER
CLASS AB OUTPUT CHANNEL
Untrimmed Offset
Offset Temperature Coefficient
Gain
Gain Error
GATE-DRIVE AMPLIFIER/INTEGRATOR
I
GATE
= -1mA
Output Gate-Drive Voltage Range
(Note 2)
V
GATE
I
GATE
= +1mA
I
GATE
= -10mA
I
GATE
= +10mA
Gate Voltage Settling Time—
MAX11015
Settles to within ±0.5% of final value, R
S
= 50 , C
GATE
= 15µF, see GATE Output
Resistance vs. GATE Voltage in the
Typical Operating Characteristics
No series resistance, R
S
= 0
R
S
= 500
RMS noise, 1kHz to 1MHz
C
LOAD
= 1nF
I
SC
R
OPSW
Sinking or sourcing
Clamp GATE1 to ACLAMP1, GATE2 to
ACLAMP2 (Note 4)
12
DNL
ADC
INL
ADC
(Note 5)
±2
(Note 6)
±2
±0.4
±0.4
±0.1
±0.1
±2
±2
±4
±4
0
0
15,000
250
±100
±25
3.6
V
GATEVSS
+ 1.2
-1
-20
V
GATEVSS
+1
-0.15
-4
V
mV
V
mV
(Note 1)
50
0
-2
0.1
%
µV
mV/
o
C
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
MAX11014/MAX11015
t
GATE
1.1
ms
Output Capacitive Load (Note 3)
Gate Voltage Noise
Maximum Power-On Transient
Output Short-Circuit Current Limit
Output Safe Switch On-
Resistance
ADC DC ACCURACY
Resolution
Differential Nonlinearity
Integral Nonlinearity
Offset Error
Gain Error
Gain Temperature Coefficient
Offset Temperature Coefficient
Channel-to-Channel Offset
Matching
Channel-to-Channel Gain
Matching
C
GATE
0.5
nF
nV/
Hz
mV
mA
k
Bits
LSB
LSB
LSB
LSB
ppm/
o
C
ppm/
o
C
LSB
LSB
_______________________________________________________________________________________
3
Automatic RF MESFET Amplifier
Drain-Current Controllers
MAX11014/MAX11015
ELECTRICAL CHARACTERISTICS (continued)
(V
GATEVSS
= V
AVSS
= -5.5V to -4.75V, V
AVDD
= +4.75V to +5.25V, V
DVDD
= +2.7V to V
AVDD
, external V
REFADC
= +2.5V, external
V
REFDAC
= +2.5V, C
REFADC
= C
REFDAC
= 0.1µF, V
OPSAFE1
= V
OPSAFE2
= 0, V
RCS1+
= V
RCS2+
= +5V, C
FILT1
= C
FILT3
= 1nF, C
FILT2
=
C
FILT4
= 1nF, V
AGND
= V
DGND
= 0, V
ADCIN0
= V
ADCIN1
= 0, V
ACLAMP1
= V
ACLAMP2
= -5V, T
J
= T
MIN
to T
MAX
, unless otherwise noted.
All typical values are at T
J
= +25°C.)
PARAMETER
Signal-to-Noise Plus Distortion
Total Harmonic Distortion
Spurious-Free Dynamic Range
Intermodulation Distortion
Full-Power Bandwidth
Full-Linear Bandwidth
ADC CONVERSION RATE
Power-Up Time
Acquisition Time (Note 3)
Conversion Time
Aperture Delay
ADCIN1, ADCIN2 INPUTS
Input Range
Input Leakage Current
Input Capacitance
TEMPERATURE MEASUREMENTS
Internal Sensor Measurement
Error
External Sensor Measurement
Error (Note 8)
Temperature Resolution
External Diode Drive
External Temperature Sensor
Drive Current Ratio
INTERNAL REFERENCE
Reference Output Voltage
Reference Output Temperature
Coefficient
Reference Output Impedance
Power-Supply Rejection Ratio
PSRR
V
AVDD
= +5V ±5%
V
REFADC
= V
REFDAC
, T
J
= +25°C
+2.490
+2.500
±15
6.5
-83
+2.510
V
ppm/
o
C
kΩ
dB
3.26
16.6
T
J
= +25°C
T
J
= -40°C to +85°C (Note 3)
T
J
= -40°C to +105°C (Note 3)
T
J
= +25°C
T
J
= -40°C to +105°C
±0.25
±1.0
±1.0
±1.0
±3
0.125
75.00
±2.5
±3.5
°C
°C/LSB
µA
°C
C
ADCIN_
V
ADCIN_
Relative to AGND (Note 7)
V
ADCIN_
= 0V or V
AVDD
0
±0.01
34
V
REFADC
±1
V
µA
pF
t
PU
t
ACQ
t
CONV
External reference
Internal reference
GATE_ and sense voltage measurements
All other measurements
Internally clocked
30
40
1.5
6.5
0.8
50
µs
µs
µs
ns
SYMBOL
SINAD
THD
SFDR
IMD
f
IN1
= 9.9kHz, f
IN2
= 10.2kHz
-3dB point
S / (N + D) > 68dB
Up to the 5th harmonic
CONDITIONS
MIN
TYP
70
-84
86
76
1
100
MAX
UNITS
dB
dB
dB
dB
MHz
kHz
ADC DYNAMIC ACCURACY (1kHz sine-wave input, -0.5dB from full scale, 94.4ksps)
4
_______________________________________________________________________________________
Automatic RF MESFET Amplifier
Drain-Current Controllers
ELECTRICAL CHARACTERISTICS (continued)
(V
GATEVSS
= V
AVSS
= -5.5V to -4.75V, V
AVDD
= +4.75V to +5.25V, V
DVDD
= +2.7V to V
AVDD
, external V
REFADC
= +2.5V, external
V
REFDAC
= +2.5V, C
REFADC
= C
REFDAC
= 0.1µF, V
OPSAFE1
= V
OPSAFE2
= 0, V
RCS1+
= V
RCS2+
= +5V, C
FILT1
= C
FILT3
= 1nF, C
FILT2
=
C
FILT4
= 1nF, V
AGND
= V
DGND
= 0, V
ADCIN0
= V
ADCIN1
= 0, V
ACLAMP1
= V
ACLAMP2
= -5V, T
J
= T
MIN
to T
MAX
, unless otherwise noted.
All typical values are at T
J
= +25°C.)
PARAMETER
EXTERNAL REFERENCES
REFADC Input Voltage Range
REFADC Input Current
REFDAC Input Voltage Range
REFDAC Input Current
DAC DC ACCURACY
Resolution
Integral Nonlinearity
Differential Nonlinearity
POWER SUPPLIES
Analog Supply Voltage
Digital Supply Voltage
Negative Supply Voltage
Analog Supply Current
Digital Supply Current
Negative Supply Current
Analog Shutdown Current
Digital Shutdown Current
Negative Shutdown Current
SERIAL-INTERFACE SUPPLIES
V
IL
Input Voltage
V
IH
Input Hysteresis
Output Low Voltage
V
HYS
V
OL
BUSY: I
SINK
= 0.5mA;
DOUT, ALARM: I
SINK
= 3mA
SPI/
I2C
= DV
DD
;
BUSY: I
SOURCE
= 0.5mA;
DOUT, ALARM: I
SOURCE
= 2mA
DV
DD
-
0.5V
±0.01
5
±10
0.7 x
DV
DD
0.05 x
DV
DD
0.4
V
V
0.3 x
DV
DD
V
AVDD
V
DVDD
V
GATEVSS
,
V
GATEVSS
= V
AVSS
V
AVSS
I
AVDD
I
DVDD
I
GATEVSS
+ I
AVSS
V
AVDD
= +5.25V
V
DVDD
= +5.25V
V
GATEVSS
= V
AVSS
= -5.5V
V
AVDD
= +5.25V
V
DVDD
= +5.25V
V
GATEVSS
= V
AVSS
= -5.5V
+4.75
+2.7
-5.50
2.8
1.5
1.1
0.8
0.2
0.6
+5.25
AV
DD
-4.75
5
5
1.7
V
V
V
mA
mA
mA
µA
µA
µA
INL
DAC
DNL
DAC
Measured at FILT_
Measured at FILT_, guaranteed monotonic
12
±1
±0.4
±1
Bits
LSB
LSB
V
REFADC
I
REFADC
V
REFDAC
V
REFADC
= +2.5V, f
SAMPLE
= 178ksps
Acquisition/between conversions
+0.50
26
+1.0
60
±0.01
+2.52
V
AVDD
V
µA
V
µA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
MAX11014/MAX11015
V
Output High Voltage
Input Current
Input Capacitance
V
OH
I
IN
C
IN
V
µA
pF
_______________________________________________________________________________________
5
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