CHENMKO ENTERPRISE CO.,LTD
CHM210BGP
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 100 Volts
APPLICATION
* Servo motor control.
* Other switching applications.
CURRENT 1.3 Ampere
FEATURE
* Small flat package. (SC-59 )
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
* High saturation current capability.
1.7~2.1
(2)
(3)
SC-59/SOT-346
0.95
2.7~3.1
0.95
(1)
CONSTRUCTION
* N-Channel Enhancement
0.3~0.51
1.2~1.9
0.89~1.3
0.085~0.2
0.3~0.6
2.1~2.95
(1)
G
CIRCUIT
D
(3)
0~0.1
S
(2)
Dimensions in millimeters
SC-59/SOT-346
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM210BGP
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
100
V
V
±
20
1.3
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
(Note 1)
Operating Temperature Range
Storage Temperature Range
(Note 1)
A
18
750
-55 to 150
-55 to 150
mW
°C
°C
Note : 1. Part mounted on FR-4 board with recommended pad layout.
2. Short duration test pulse used to minimize self-heating effect
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
166
°C/W
2011-01
ELECTRICAL CHARACTERISTIC ( CHM210BGP )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 10 µA
V
DS
= 80 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
100
1
+100
-100
V
uA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= 250 uA
V
GS
=5V, I
D
=1A
V
GS
=10V, I
D
=2A
1.0
230
220
10
2.0
240
230
V
m
Ω
S
Forward Transconductance
V
DS
=10V, I
D
= 2A
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0 MHz
802
80
41
pF
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=50V, I
D
=2A
V
GS
=10V
V
DD
= 30V
I
D
= 1.0A , V
GS
= 10 V
R
GEN
= 6
Ω
15
2.0
4.0
16
330
39
111
nS
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
(Note 2)
10
1.4
A
V
Drain-Source Diode Forward Voltage I
S
= 2A , V
GS
= 0 V
RATING CHARACTERISTIC CURVES ( CHM210BGP )
Typical Electrical Characteristics
Figure 1. Output Characteristics
8
Figure 2. Transfer Characteristics
8
V
G S =9 , 4 . 5 V
7
6
5
4
3
2
1
0
V
G S =3 . 5 V
I
D
, DRAIN CURRENT (A)
7
6
5
I
D
, DRAIN CURRENT (A)
T
J
=-20°C
4
J
T
=125°C
3
2
T
J
=25°C
V
G S =2 . 4 V
0
1.0
2.0
3.0
4.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
5.0
1
0
0
1.0
2.0
3.0
4.0
5.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 3. Gate Charge
10
V
DS
=50V
I
D
=2A
2.0
Figure 4. On-Resistance Variation with
Temperature
V
GS
=10V
I
D
=2A
V
GS
, GATE TO SOURCE VOLTAGE (V)
1.8
DRAIN-SOURCE ON-RESISTANCE
8
6
R
DS(on)
, NO
RMALIZED
1.6
1.4
4
1.2
1.0
2
0.8
0.6
-50
0
0
3
6
9
12
Q
g
, TOTAL GATE CHARGE (nC)
15
18
-25
0
25
50
75
100
T
J
, JUNCTION T EMPERATURE (°C)
125
150
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