CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM20N06PAGP
CURRENT 20 Ampere
FEATURE
* Small package. (TO-252)
* Super high dense cell design for extremely low R
DS(ON)
.
* High power and current handing capability.
.220 (5.59)
.195 (4.95)
.280 (7.10)
.238 (6.05)
D-PAK(TO-252)
.035 (0.89)
.018 (0.45)
.070 (1.78)
.028 (0.70)
.417 (10.6)
.346 (8.80)
.094 (2.40)
.087 (2.20)
CONSTRUCTION
* N-Channel Enhancement
.261 (6.63)
.213 (5.40)
(1)
(3)
(2)
.047 (1.20)
.020 (0.50)
.010 (0.25)
.035 (0.89)
.019 (0.50)
.102 (2.59)
.078 (1.98)
.024 (0.61)
.016 (0.40)
CIRCUIT
(1)
G
D
(3)
1 Gate
2 Source
3 Drain( Heat Sink )
S
(2)
Dimensions in inches and (millimeters)
TO-252
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM20N06PAGP
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
60
V
V
±
20
20
I
D
- Pulsed
P
D
T
J
T
STG
(Note 3)
A
60
60
-55 to 150
-55 to 150
W
°C
°C
Maximum Power Dissipation at Tc = 25 °C
Operating Temperature Range
Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
50
°C/W
2006-02
ELECTRICAL CHARACTERISTIC ( CHM20N06PAGP )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 55 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
60
1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=15A
1
12
55
9
2.5
55
75
V
m
Ω
S
Forward Transconductance
V
DS
=10V, I
D
= 20A
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=30V, I
D
=15A
V
GS
=10V
V
DD
= 30V
I
D
= 1A , V
GS
= 10 V
R
GEN
= 6
Ω
19
2.8
3.6
12
7
34
9
25
nC
25
20
65
30
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
(Note 2)
20
1.3
A
V
Drain-Source Diode Forward Voltage I
S
= 15A , V
GS
= 0 V
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