CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM1273GP
CURRENT 2 Ampere
FEATURE
SC-59/SOT-346
* Small surface mounting type. (SC-59)
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
* High saturation current capability.
1.7~2.1
(2)
(3)
0.95
2.7~3.1
0.95
(1)
CONSTRUCTION
* N-Channel Enhancement
0.3~0.51
1.2~1.9
MARKING
* 1273
0.89~1.3
0.085~0.2
0.3~0.6
2.1~2.95
0~0.1
CIRCUIT
1
G
D
3
S
2
Dimensions in millimeters
SC-59/SOT-346
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM1273GP
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
- Pulsed
(Note 3)
60
V
V
±
20
2
4
0.5
-55 to 150
-55 to 150
A
W
°C
°C
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
RATING CHARACTERISTIC CURVES ( CHM1273GP )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 10 µA
V
DS
= 60 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
60
10
+10
-10
V
µA
uA
uA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V
DS
= 10V, I
D
= 1mA
V
GS
=10V, I
D
=0.5A
V
GS
=4.0V, I
D
=0.5A
V
DS
=10V, I
D
= 0.5A
1.0
1.7
0.24
0.31
2.5
0.65
1.00
V
Ω
mS
400
Dynamic Characteristics
g
FS
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 4)
V
DS
=10V, I
D
= 0.5A
400
mS
220
105
16
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS
t
on
t
r
t
off
t
f
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DD
= 25V
I
D
= 0.5A , V
GS
= 10 V
R
GEN
= 10
Ω,
R
L
= 50
Ω
15
35
380
120
nS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
