BZD27C3V6P-M to BZD27C200P-M
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
Sillicon planar zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering: 260 °C/10 s
at terminals
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
•
Halogen-free according to IEC 61249-2-21
definition
•
•
•
•
•
•
17249
Mechanical Data
Case:
DO-219AB (SMF)
Weight:
approx. 15 mg
Packaging codes/options:
18/10 k per 13 " reel (8 mm tape), 10 k/box
08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
T
L
= 80 °C
T
A
= 25 °C
100
μs
square pulse
2)
Non-repetitive peak pulse power
dissipation
10/1000
μs
waveform (BZD27-C7V5P-M to BZD27-C100P-M)
2)
10/1000
μs
waveform (BZD27-C110P-M to BZD27-C200P-M)
2)
Note:
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
2)
Symbol
P
tot
P
tot
P
ZSM
P
RSM
P
RSM
Value
2.3
0.8
1)
300
150
100
Unit
W
W
W
W
W
T
J
= 25 °C prior to surge
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
1)
Thermal resistance junction to lead
Maximum junction temperature
Storage temperature range
Note:
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
Test condition
Symbol
R
thJA
R
thJL
T
j
T
S
Value
180
30
150
- 55 to + 150
Unit
K/W
K/W
°C
°C
Document Number 83307
Rev. 1.0, 01-Apr-10
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
1
BZD27C3V6P-M to BZD27C200P-M
Vishay Semiconductors
Electrical Characteristics
Maximum V
F
= 1.2 V, at I
F
= 0.2 A
When used as voltage regulator diodes (T
J
= 25 °C, unless otherwise specified)
Working voltage
1)
Part number
Marking
code
V
Z
at I
ZT
V
min.
BZD27C3V6P-M
BZD27C3V9P-M
BZD27C4V3P-M
BZD27C4V7P-M
BZD27C5V1P-M
BZD27C5V6P-M
BZD27C6V2P-M
BZD27C6V8P-M
BZD27C7V5P-M
BZD27C8V2P-M
BZD27C9V1P-M
BZD27C10P-M
BZD27C11P-M
BZD27C12P-M
BZD27C13P-M
BZD27C15P-M
BZD27C16P-M
BZD27C18P-M
BZD27C20P-M
BZD27C22P-M
BZD27C24P-M
BZD27C27P-M
BZD27C30P-M
BZD27C33P-M
BZD27C36P-M
BZD27C39P-M
BZD27C43P-M
BZD27C47P-M
BZD27C51P-M
BZD27C56P-M
BZD27C62P-M
BZD27C68P-M
BZD27C75P-M
BZD27C82P-M
BZD27C91P-M
BZD27C100P-M
BZD27C110P-M
BZD27C120P-M
BZD27C130P-M
BZD27C150P-M
BZD27C160P-M
BZD27C180P-M
BZD27C200P-M
Note:
1)
Pulse test: tp
≤
5 ms.
N0
N1
N2
N3
N4
N5
N6
N7
N8
N9
O0
O1
O2
O3
O4
O5
O6
O7
O8
O9
P0
P1
P2
P3
P4
P5
P6
P7
P8
P9
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Q9
R0
R1
R2
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
max.
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
127
141
156
171
191
212
typ.
4
4
4
3
3
2
2
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
Differential
resistance
r
dif
at I
Z
Ω
max.
8
8
7
7
6
4
3
3
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
min.
- 0.14
- 0.14
- 0.12
- 0.1
- 0.08
- 0.04
- 0.01
0
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
Temperature
coefficient
α
Z
at I
Z
%/°C
max.
- 0.04
- 0.04
- 0.02
0
0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
Test
current
I
ZT
mA
Reverse current at
reverse voltage
I
R
μA
max.
100
50
25
10
5
10
5
10
50
10
10
7
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
3
3
3
5
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
V
R
V
www.vishay.com
2
For technical support, please contact:
DiodesSSP@vishay.com
Document Number 83307
Rev. 1.0, 01-Apr-10
BZD27C3V6P-M to BZD27C200P-M
Vishay Semiconductors
Electrical Characteristics
When used as protection diodes (T
J
= 25 °C, unless otherwise specified)
Rev.
breakdown Test current
voltage
Part number
V
(BR)R
at
I
test
V
min.
BZD27C7V5P-M
BZD27C8V2P-M
BZD27C9V1P-M
BZD27C10P-M
BZD27C11P-M
BZD27C12P-M
BZD27C13P-M
BZD27C15P-M
BZD27C16P-M
BZD27C18P-M
BZD27C20P-M
BZD27C22P-M
BZD27C24P-M
BZD27C27P-M
BZD27C30P-M
BZD27C33P-M
BZD27C36P-M
BZD27C39P-M
BZD27C43P-M
BZD27C47P-M
BZD27C51P-M
BZD27C56P-M
BZD27C62P-M
BZD27C68P-M
BZD27C75P-M
BZD27C82P-M
BZD27C91P-M
BZD27C100P-M
BZD27C110P-M
BZD27C120P-M
BZD27C130P-M
BZD27C150P-M
BZD27C160P-M
BZD27C180P-M
BZD27C200P-M
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
I
test
mA
min.
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
Temperature coefficient
α
Z
at I
test
%/°C
max.
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
Clamping voltage
at I
RSM 1)
A
13.3
12.2
11.3
10.1
9.6
8.8
7.9
7.2
6.6
5.9
5.3
4.8
4.4
3.9
3.6
3.2
3
2.8
2.5
2.3
2.1
1.9
1.7
1.6
1.5
1.3
1.2
1.1
0.72
0.65
0.59
0.53
0.48
0.43
0.39
Reverse current at
stand-off voltage
I
R
μA
max.
1500
1200
100
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
at V
WM
V
V
C
V
max .
11.3
12.3
13.3
14.8
15.7
17
18.9
20.9
22.9
25.6
28.4
31
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
126
139
139
152
169
187
205
229
254
Note:
1)
Non-repetitive peak reverse current in accordance with "IEC 60-1, section 8" (10/1000
μs
pulse); see fig. 5.
Document Number 83307
Rev. 1.0, 01-Apr-10
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
3
BZD27C3V6P-M to BZD27C200P-M
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
P
RSM
- Max. Pulse Power Dissipation (W)
10
160
140
120
100
80
60
40
20
0
0
50
100
150
200
I
F
- Forward Current (A)
Max.
V
F
Typ.
V
F
1
0.1
0.6
17411
0.8
1.0
1.2
1.4
1.6
V
F
- Forward
Voltage
(V)
17414
V
Znom
- Zener
Voltage
(V)
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage
10 000
C
D
- Typ. Junction Capacitance (pF)
C5V1P
1000
C6V8P
C12P
C18P
I
RSM
(%)
100
90
t
1
= 10
µs
t
2
= 1000
µs
50
100
C27P
C200P
10
0
0.5
1.0
1.5
2.0
2.5
3.0
17415
C51P
10
t
1
t
2
t
17412
V
R
- Reverse
Voltage
(V)
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition
3.0
P
tot
- Power Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0
17413
Tie point temperature
Ambient temperature
0
25
50
75
100
125
150
T
amb
- Ambient Temperature (°C)
Figure 3. Power Dissipation vs. Ambient Temperature
www.vishay.com
4
For technical support, please contact:
DiodesSSP@vishay.com
Document Number 83307
Rev. 1.0, 01-Apr-10
BZD27C3V6P-M to BZD27C200P-M
Vishay Semiconductors
Package Dimensions
in millimeters (inches):
DO219-AB (SMF)
0.85 (0.033)
0.35 (0.014)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
5
1.9 (0.075)
1.7 (0.067)
1.2 (0.047)
0.8 (0.031)
0 (0.000)
Detail Z
enlarged
1.08 (0.043)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.88 (0.035)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
1.4 (0.055)
2.9 (0.114)
Document Number 83307
Rev. 1.0, 01-Apr-10
5
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
5
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