Secondary LDO Regulators
Secondary
Variable Output LDO Regulator
BD00IA5WEFJ
No.10026EAT10
●Description
BD00IA5WEFJ is a LDO regulator with output current 0.5A. The output accuracy is ±1% of output voltage. With external
resistance, it is available to set the output voltage at random (from 0.8V to 5.5V) and also provides output voltage fixed type
without external resistance. It is used for the wide applications of digital appliances. It has package type: HTSOP-J8.
Over current protection (for protecting the IC destruction by output short circuit), circuit current ON/OFF switch (for setting
the circuit 0µA at shutdown mode), and thermal shutdown circuit (for protecting IC from heat destruction by over load
condition) are all built in. It is usable for ceramic capacitor and enables to improve smaller set and long-life.
●Features
1) Output current 0.5A
2) High accuracy reference voltage circuit
3) Built-in Over Current Protection circuit (OCP)
4) Built-in Thermal Shut Down circuit (TSD)
5) With shut down switch
6) Output voltage variable type (0.8V to 4.5V)
7) Package: HTSOP-J8
●Output
voltage differential Line up
Product name
BD00IA5WEFJ
Variable
○
Package
HTSOP-J8
Product name :
B D 0 0 I C 0 W E F J
a
b
c
d
e
Signal
a
Description
Output voltage (V)
00
Voltage resistance(V)
E
F
G
A1
A3
A5
24V
20V
15V
Output current (A)
0.1A
0.3A
0.5A
Shutdown switch
“W”
“ ”
Package
EFJ
HTSOP-J8
C0
C5
D0
1.0A
1.5A
2.0A
H
I
Variable
10V
7V
b
c
d
Shutdown switch is built in
Shutdown switch is not built in
e
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© 2010 ROHM Co., Ltd. All rights reserved.
1/11
2010.10 - Rev.A
BD00IA5WEFJ
●Absolute
maximum ratings (Ta=25℃)
Parameter
Power supply voltage
EN voltage
Output voltage
Feedback voltage
Power dissipation
HTSOP-J8
Operating Temperature Range
Storage Temperature Range
Junction Temperature
*1
*2
Technical Note
Symbol
Vcc
V
EN
V
OUT
V
FB
Pd
*2
Ratings
7.0
*1
7.0
7.0
7.0
2110
*2
Unit
V
V
V
V
mW
℃
℃
℃
Topr
Tstg
Tjmax
-25½+85
-55½+150
+150
Not to exceed Pd
Reduced by 16.9mW/℃ for each increase in Ta of 1℃ over 25℃. (when mounted on a board 70mm×70mm×1.6mm glass-epoxy board, two layer)
●Operating
conditions (Ta=25℃)
Parameter
Input power supply voltage
EN voltage
Output voltage setting range
Output current
Symbol
Vcc
V
EN
Vo
Io
Ratings
Min.
2.4
0.0
0.8
0.0
Max.
5.5
5.5
4.5
0.5
Unit
V
V
V
A
This product should not be used in a radioactive environment.
●Electrical
characteristics (Unless otherwise noted, Ta=25℃, EN=3V, Vcc=3.3V, R
1
=16kΩ, R
2
=7.5kΩ)
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
Circuit current at shutdown mode
Bias current
Line regulation
Load regulation
Minimun dropout Voltage
Output reference voltage
EN Low voltage
EN High voltage
EN Bias current
Isd
Icc
Reg.I
Reg Io
Vco
V
FB
V
EN
(Low)
V
EN
(High)
IEN
-
-
-
-
-
0.792
0
2.4
1
0
250
25
25
0.4
0.800
-
-
3
5
500
50
75
0.6
0.808
0.8
5.5
9
µA
µA
mV
mV
V
V
V
V
µA
Vcc=( Vo+0.6V )→5.5V
Io=0→0.5A
Vcc=3.3V,Io=0.5A
Io=0mA
EN=0V, OFF mode
●I/O
Equivalent circuits
8pin(VCC) / 1pin(VO)
2pin(FB)
2pin(FB)
5pin(EN)
8pin(Vcc)
5pin(EN)
Vcc
1pin(Vo)
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© 2010 ROHM Co., Ltd. All rights reserved.
2/11
2010.10 - Rev.A
BD00IA5WEFJ
●Reference
Data (Unless otherwise noted, Ta=25℃, EN=3V, Vcc=3.3V, R
1
=16kΩ, R
2
=7.5kΩ)
EN
1V/div
Technical Note
Vo
0.1V/div
Vo
0.1V/div
Vcc
2V/div
Io
0.2A/div
Io
0.2A/div
Vo
2V/div
10µsec / div
10usec / div
1msec/div
Fig.1 Transient Response(0→1.0A)
Co=1µF
Fig.2 Transient Response (1.0→0A)
Co=1µF
Fig.3 Input sequence 1
Co=1µF
EN
1V/div
EN
1V/div
EN
1V/div
Vcc
2V/div
Vcc
2V/div
Vcc
2V/div
Vo
2V/div
20msec / div
Vo
2V/div
500µsec / div
Vo
2V/div
40msec/div
Fig.4 OFF sequence 1
Co=1µF
Fig.5 Inpurt sequence 2
Co=1µF
Fig.6 OFF sequence 2
Co=1µF
2.7
450
5.0
2.6
Icc [µA]
350
4.0
2.5
250
ISTB[µA]
0
25
Ta
[℃]
50
75 85
Vo [ V]
3.0
2.0
2.4
150
1.0
2.3
-25
0
25
Ta
[℃]
50
75 85
50
-25
0.0
-25
0
25
Ta
[℃]
50
75 85
Fig.7 Ta-Vo (Io=0mA)
Fig.8 Ta-Icc
Fig.9 Ta-Isd
(V
EN
=0V)
5.0
8.0
2.7
6.0
2.6
4.0
IEN [μA]
4.0
2.5
ISTB[µA]
Vo [ V]
3.0
2.0
2.0
2.4
1.0
0.0
-25
0
25
Ta
[℃]
50
75 85
2.3
0
0.2
0.4
0.6
Io [A]
0.8
1
0.0
0
1
2
3
Vcc [V]
4
5 5.5
Fig.10 Ta-IEN
Fig.11 Io-Vo
Fig.12 Vcc-Isd
(V
EN
=0V)
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© 2010 ROHM Co., Ltd. All rights reserved.
3/11
2010.10 - Rev.A
BD00IA5WEFJ
●Reference
Data
4
3.0
3
Technical Note
3
2.0
Vo [ V]
2
Vo [ V]
1.0
1
0.0
0
100
120
140
160
Ta
[℃]
180
200
0
0.2
0.4
0.6
Io [A]
0.8
1
Vo [V]
2
1
0
0
1
2
3
Vcc [V]
4
5 5.5
Fig.13 Vcc-Vo (Io=0mA)
Fig.14 TSD (Io=0mA)
Fig.15 OCP
0.6
10.00
400
300
0.5
Vdrop [V]
ESR [Ω]
1.00
Icc [μA]
Safety area
0.10
200
0.4
100
0.3
-25
0
25
Ta
[℃]
50
75 85
0.01
0
0.2
0.4
0.6
Io [A]
0.8
1
0
0
0.1
0.2
0.3
Io [A]
0.4
0.5
Fig.16 Minimum dropout Voltage 1
(Vcc=3.3V, Io=-0.5A)
100
0.6
0.5
0.4
Vdrop [V]
0.3
0.2
Fig.17 ESR Condencer
Fig.18 Io-Icc
0.6
0.5
0.4
Vdrop [V]
0
0.1
0.2
0.3
Io [A]
0.4
0.5
0.3
0.2
0.1
0.0
0
0.1
0.2
0.3
Io [A]
0.4
0.5
80
PSRR [dB]
60
40
20
0.1
0.0
0
0.1
1
10
Frequency [kHz]
100
Fig.19 PSRR(Io=0mA)
Fig.20 Minimum dropout Voltage 2
(Vcc=2.4V, Ta=25℃)
Fig.21 Minimum dropout Voltage 3
(Vcc=3.3V, Ta=25℃)
0.6
0.5
0.4
Vdrop [V]
0.3
0.2
0.1
0.0
0
0.1
0.2
0.3
Io [A]
0.4
0.5
Fig.22 Minimum dropout Voltage 4
(Vcc=5.0V, Ta=25℃)
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© 2010 ROHM Co., Ltd. All rights reserved.
4/11
2010.10 - Rev.A
BD00IA5WEFJ
●Heat
Dissipation Characteristics
◎HTSOP-J8
4.0
Technical Note
⑤3.76W
Measure condition: mounted on a ROHM board, and IC
Substrate size: 70mm
×
70mm
×
1.6mm
(Substrate with thermal via)
・Solder
the substrate and package reverse exposure heat radiation part
3.0
Power Dissipation : Pd [W]
④2.11W
2.0
③1.10W
1.0
①
IC only
θj-a=249.5℃/W
②
1-layer(copper foil are :0mm×0mm)
θj-a=153.2℃/W
③
2-layer(copper foil are :15mm×15mm)
θj-a=113.6℃/W
④
2-layer(copper foil are :70mm×70mm)
θj-a=59.2℃/W
⑤
4-layer(copper foil are :70mm×70mm)
θj-a=33.3℃/W
②0.82W
①0.50W
0.0
0
25
50
75
100
125
150
Ambient Temperature: Ta [℃]
●About
Input-to-output capacitor
It is recommended that a capacitor is placed nearby pin between Input pin and GND, output pin and GND.
A capacitor, between input pin and GND, is valid when the power supply impedance is high or drawing is long. Also as for a
capacitor, between output pin and GND, the greater the capacity, more sustainable the line regulation and it makes
improvement of characteristics by load change. However, please check by mounted on a board for the actual application.
Ceramic capacitor usually has difference, thermal characteristics and series bias characteristics, and moreover capacity
decreases gradually by using conditions.
For more detail, please be sure to inquire the manufacturer, and select the best ceramic capacitor.
Ceramic capacitor capacity- DC bias characteristics
(Characteristics example)
10 Voltage resistance
10
0
-10
B1 characteristics
GRM188B11A105KA61D
10 Voltage resistance
Capacitance Change [%]
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
1
2
3
10 Voltage Resistance
F characteristics
10 Voltage resistance
F characteristics
B characteristics
B characteristics
6.3 Voltage resistance
4 Voltage resistance
X6S characteristics
4
DC Bias Voltage [V]
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© 2010 ROHM Co., Ltd. All rights reserved.
5/11
2010.10 - Rev.A
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