LESHAN RADIO COMPANY, LTD.
LBC846ADW1T1G
LBC846BDW1T1G
LBC847BDW1T1G
LBC847CDW1T1G
LBC848BDW1T1G
LBC848CDW1T1G
S-LBC846ADW1T1G
S-LBC846BDW1T1G
S-LBC847BDW1T1G
S-LBC847CDW1T1G
S-LBC848BDW1T1G
S-LBC848CDW1T1G
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with
RoHS requirements.
6
5
4
Q
2
Q
1
See Table
6
5
4
1
2
3
1
2
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current -Continuous
Symbol
V
CEO
SOT-363 /SC-88
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
V
CBO
V
EBO
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
Max
380
250
3.0
328
–55 to +150
Unit
mW
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
ORDERING INFORMATION
Device
LBC846ADW1T1G
LBC846ADW1T3G
LBC846BDW1T1G
LBC846BDW1T3G
LBC847BDW1T1G
LBC847BDW1T3G
LBC847CDW1T1G
LBC847CDW1T3G
LBC848BDW1T1G
LBC848BDW1T3G
LBC848CDW1T1G
LBC848CDW1T3G
S-LBC846ADW1T1G
S-LBC846ADW1T3G
S-LBC846BDW1T1G
S-LBC846BDW1T3G
S-LBC847BDW1T1G
S-LBC847BDW1T3G
S-LBC847CDW1T1G
S-LBC847CDW1T3G
S-LBC848BDW1T1G
S-LBC848BDW1T3G
S-LBC848CDW1T1G
S-LBC848CDW1T3G
Marking
Shipping
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
3000 Units/Reel
10000 Units/Reel
1A
1A
1B
1B
1F
1F
1G
1G
1K
1K
1L
1L
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LBC846ADW1T1G Series
S-LBC846ADW1T1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
Min
Typ
Max
Unit
V
65
45
30
V
(BR)CES
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Emitter Breakdown Voltage
(I
C
= 10
µA,
V
EB
= 0)
LBC846 Series
LBC847 Series
LBC848 Series
Collector–Base Breakdown Voltage
(I
C
= 10
µA)
LBC846 Series
LBC847 Series
LBC848 Series
Emitter–Base Breakdown Voltage
(I
E
= 1.0
µA)
LBC846 Series
LBC847 Series
LBC848 Series
Collector Cutoff Current
(V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
(BR)CEO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
—
—
—
V
—
—
—
V
—
—
—
15
5.0
80
50
30
V
(BR)CBO
80
50
30
V
(BR)EBO
6.0
6.0
5.0
—
—
I
CBO
nA
µA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2.0 mA, V
CE
= 5.0 V)
LBC846A
LBC846B, LBC847B, LBC848B
LBC847C, LBC848C
h
FE
110
200
420
180
290
520
220
450
800
—
Collector–Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA) V
CE(sat)
Collector–Emitter Saturation Voltage
( I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
V
BE(sat)
Base–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
V
BE(on)
Base–Emitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
—
—
—
—
580
—
—
—
0.7
0.9
660
—
0.25
0.6
—
—
700
770
V
V
mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100
—
—
—
—
—
—
—
—
4.5
10
4.0
MHz
pF
dB
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
C
obo
Noise Figure (I
C
= 0.2 mA,
NF
V
CE
= 5.0 V
dc
, R
S
= 2.0 kΩ, LBC846A,LBC846B, LBC847B, LBC848B
f = 1.0 kHz, BW = 200 Hz)
LBC847C, LBC848C
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LBC846ADW1T1G Series
S-LBC846ADW1T1G Series
TYPICAL CHARACTERISTICS
1.0
0.9
1.5
0.8
1.0
0.8
0.6
0.7
2.0
h FE , NORMALIZED DC CURRENT GAIN
V,VOLTAGE (VOLTS)
0.6
0.5
0.4
0.3
0.2
0.1
0.4
0.3
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mAdc)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
θ
vb
, TEMPERATURE COEFFICIENT (mV/ ° C)
1.0
V
CE
, COLLECTOR-EMITTER VOLTAGE(V)
1.2
1.6
1.6
1.2
2.0
0.8
2.4
0.4
2.8
0
0.02
0.1
1.0
10
20
0.2
1.0
10
100
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
Rev.O 3/6
LESHAN RADIO COMPANY, LTD.
LBC846ADW1T1G Series
S-LBC846ADW1T1G Series
TYPICAL CHARACTERISTICS
10
7.0
T
f
, CURREN-GAIN-BANDWIDTH PRODUCT (MHz)
400
300
200
C,CAPACITANCE(pF)
5.0
100
80
60
40
30
20
0.5 0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
3.0
2.0
1.0
0.4
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
1.0
h
FE
, DC CURRENT GAIN (NORMALIZED)
0.8
2.0
1.0
V, VOLTAGE (VOLTS)
1.0
10
100
0.6
0.4
0.5
0.2
0.2
0.1 0.2
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
V
CE
, COLLECTOR-EMITTER VOLTAGE(VOLTS)
2.0
-1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
θ
VB
, TEMPERATURE COEFFICIENT (mV/ ° C)
1.6
-1.4
1.2
-1.8
0.8
-2.2
0.4
-2.6
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
-3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
Rev.O 4/6
LESHAN RADIO COMPANY, LTD.
LBC846ADW1T1G Series
S-LBC846ADW1T1G Series
1.0
D=0.5
0.2
0.1
0.1
0.05
0.02
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
0.001
0
1.0
10
100
1.0K
10K
100K
1.0M
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.01
0.01
t, TIME (ms)
Figure 11. Thermal Response
-200
I
C
, COLLECTOR CURRENT (mA)
The safe operating area curves indicate I
C
–V
CE
limits of
-100
-50
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 12 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
< 150°C. T
J
(pk) may be calculated from the data in Figure 12. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
-1.0
-5.0
-10
-30
-45
-65
-100
-10
-5.0
-2.0
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 12. Active Region Safe Operating Area
Rev.O 5/6
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
