LAB
TO220–AC Package Outline.
Dimensions in mm (inches)
10.67 (0.420)
9.65 (0.380)
SEME
BFC60
2
16.51 (0.650)
14.22 (0.560)
6.86 (0.270)
5.84 (0.230)
5.33 (0.210)
4.83 (0.190)
1.40 (0.020)
0.51 (0.055)
3.05 (0.120)
2.54 (1.000)
3.73 (0.147)
3.53 (0.139) Dia.
4.83 (0.190)
3.56 (0.140)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
V
DSS
I
D(cont)
R
DS(on)
1500V
0.1A
Ω
140Ω
1 2 3
14.73 (0.580)
12.70 (0.500)
6.35 (0.250)
4.60 (0.181)
1.78 (0.070)
0.99 (0.390)
2.54 (0.100)
N o m.
5.08 (0.200)
N o m.
1.02 (0.040)
0.38 (0.015)
0.66 (0.026)
0.41 (0.016)
2.92 (0.115)
2.03 (0.080)
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
ABSOLUTE MAXIMUM RATINGS
(T
AMB
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate – Source Voltage
Total Power Dissipation
Operating and Storage Junction Temperature Range
1500
0.1
0.2
±20
20
–55 to +150
V
A
A
V
W
°C
ELECTRICAL CHARACTERISTICS
(T
AMB
= 25°C unless otherwise stated)
BV
DSS
R
DS(ON)
I
DSS
I
GSS
V
GS(off)
C
iss
C
oss
C
rss
t
on
t
off
V
SD
|Y
FS
|
Characteristic
Drain – Source Breakdown Voltage
Drain – Source On State Resistance
Zero Gate Voltage Drain Current
Gate – Source Leakage Current
Cutoff Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Diode Forward Voltage
Forward Transfer Admittance
Test Conditions
V
GS
= 0V , I
D
= 1mA
V
GS
=10V , I
D
= 50mA
V
DS
= 1200V , V
GS
= 0V
V
GS
= ±20V , V
DS
= 0V
V
DS
= 10V , I
D
= 1.0mA
V
DS
= 20V
f = 1MHz
V
GS
= 10V
I
D
= 50mA
V
GS
= 0 , I
S
= 0.1A
V
DS
= 20V , I
D
= 50mA
50
1.5
40
12
3.0
40
400
1.0
100
1.5
ns
V
mS
Prelim. 2/96
Min.
1500
Typ.
140
Max. Unit
V
200
100
±100
3.5
Ω
µA
nA
V
pF
Semelab plc.
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