Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・Complement
to type BDV66/66A/66B/66C/66D
・DARLINGTON
・High
DC current gain
APPLICATIONS
・For
use in audio output stages and general
amplifier and switching applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BDV67/67A/67B/67C/67D
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
固电
导½
半
PARAMETER
CONDITIONS
BDV67
BDV67A
V
CBO
Collector-base voltage
HA
INC
V
CEO
ES
NG
BDV67B
BDV67C
BDV67D
BDV67
BDV67A
BDV67B
BDV67C
BDV67D
Open emitter
MIC
E
OR
UCT
ND
O
VALUE
80
100
120
140
160
60
80
UNIT
V
Collector-emitter voltage
Open base
100
120
150
V
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
5
16
20
0.5
V
A
A
A
W
℃
℃
T
C
=25℃
200
150
-65~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDV67
BDV67A
V
(BR)CEO
Collector-emitter
breakdown voltage
BDV67B
BDV67C
BDV67D
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
C
V
F
t
on
t
off
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
I
C
=10A ,I
B
=40mA
I
C
=10A ; V
CE
=3V
I
C
=30mA, I
B
=0
BDV67/67A/67B/67C/67D
CONDITIONS
MIN
60
80
100
120
150
TYP.
MAX
UNIT
V
2.0
2.5
1.0
4.0
1
V
V
mA
mA
mA
V
CB
=V
CBOmax
, I
E
=0
V
CB
=1/2V
CBOmax;
T
j
=150℃
V
CE
=1/2V
CEOmax
, I
B
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=3V
电半
固
IN
Emitter cut-off current
DC current gain
DC current gain
DC current gain
导½
Collector capacitance
Diode forward voltage
Turn-on time
Turn-off time
ANG
CH
MIC
E SE
I
C
=10A ; V
CE
=3V
I
C
=16A ; V
CE
=3V
I
E
=10A
OR
UCT
ND
O
5
3000
1000
1000
300
3.0
1.0
3.5
I
E
=0 ; V
CB
=10V;f=1MHz
pF
V
μs
μs
I
C
= 10 A, I
B1
=-I
B2
=40 mA
V
CC
= 12V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to mounting base
MAX
0.625
UNIT
K/W
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BDV67/67A/67B/67C/67D
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
3
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