IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
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Email
- For salesaddresses@nxp.com use
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For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYV10X-600P
Ultrafast power diode
3 January 2014
Product data sheet
1. General description
Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
•
•
•
•
•
•
Fast switching
Isolated plastic package
Low leakage current
Low forward voltage drop
Low thermal resistance
Soft recovery characteristic
3. Applications
•
•
High frequency switched-mode power supplies
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
h
≤ 71 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
I
F
= 10 A; T
j
= 150 °C;
Fig. 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 7
-
-
1.6
V
Conditions
Min
-
-
Typ
-
-
Max
600
10
Unit
V
A
Static characteristics
V
F
t
rr
forward voltage
Dynamic characteristics
reverse recovery time
-
20
-
ns
Scan or click this QR code to view the latest information for this product
TO
-22
0
F
NXP Semiconductors
BYV10X-600P
Ultrafast power diode
5. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
n.c.
cathode
anode
mounting base; isolated
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
TO-220F (SOD113)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYV10X-600P
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
Version
SOD113
Type number
7. Marking
Table 4.
Marking codes
Marking code
BYV10X-600P
Type number
BYV10X-600P
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
BYV10X-600P
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
Conditions
Min
-
-
Max
600
600
600
10
20
Unit
V
V
V
A
A
DC
δ = 0.5 ; T
h
≤ 71 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 µs; T
h
≤ 71 °C; square-
wave pulse
All information provided in this document is subject to legal disclaimers.
-
-
-
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
2/9
NXP Semiconductors
BYV10X-600P
Ultrafast power diode
Symbol
I
FSM
Parameter
non-repetitive peak forward
current
Conditions
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
Min
-
-
-65
-
Max
80
88
175
175
aaa-008977
Unit
A
A
°C
°C
T
stg
T
j
25
P
tot
(W)
20
storage temperature
junction temperature
aaa-008948
δ=1
20
P
tot
(W)
a = 1.57
1.9
2.2
2.8
4.0
0.5
0.2
0.1
15
15
10
10
5
5
0
0
5
10
I
F(AV)
(A)
15
0
0
2.5
5
7.5
I
F(AV)
(A)
10
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
15
I
F(AV)
(A)
10
aaa-008981
10
4
I
FSM
(A)
10
3
aaa-008979
71 °C
5
10
2
I
F
I
FSM
0
-50
0
50
100
150
200
T
h
(°C)
10
10
-5
t
t
p
T
j(init)
= 25 °C max
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Forward current as a function of heatsink
temperature; maximum values
Fig. 4.
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
© NXP N.V. 2014. All rights reserved
BYV10X-600P
All information provided in this document is subject to legal disclaimers.
Product data sheet
3 January 2014
3/9
NXP Semiconductors
BYV10X-600P
Ultrafast power diode
9. Thermal characteristics
Table 6.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient
10
Z
th(j-h)
(K/W)
1
Conditions
without heatsink compound
with heatsink compound ;
Fig. 5
in free air
Min
-
-
-
Typ
-
-
55
Max
7.2
5.5
-
Unit
K/W
K/W
K/W
R
th(j-a)
aaa-008984
10
-1
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
single pulse
t
p
T
t
p
(s)
10
P
δ=
t
p
T
10
-2
10
-3
t
10
-4
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
Fig. 5.
Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
f = 1 MHz ; from cathode to external
heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
11. Characteristics
Table 8.
Symbol
V
F
BYV10X-600P
Characteristics
Parameter
forward voltage
Conditions
I
F
= 10 A; T
j
= 25 °C;
Fig. 6
All information provided in this document is subject to legal disclaimers.
Min
-
Typ
1.5
Max
2
Unit
V
Static characteristics
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
4/9
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