Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling
performance
• Isolated mounting tab
BYM359DX
SYMBOL
modulator
damper
QUICK REFERENCE DATA
DAMPER
V
R
=1500 V
3
MODULATOR
V
R
=800 V
V
F
≤
1.45 V
I
F(RMS)
= 11 A
I
FSM
≤
60 A
t
rr
≤
145 ns
1
V
F
≤
1.3 V
I
F(RMS)
=15.7 A
2
I
FSM
≤
60 A
t
rr
≤
300 ns
GENERAL DESCRIPTION
Combined damper and modulator
diodes in an isolated plastic
envelope for horizontal deflection in
colour TV and PC monitors.
The BYM359DX contains diodes
with performance characteristics
designed specifically for
applications from 16kHz to 56kHz
The BYM359DX series is supplied
in the conventional leaded SOT399
package.
PINNING
PIN
1
2
3
DESCRIPTION
modulator anode.
common anode/cathode
damper cathode
SOT399
case
1 2 3
LIMITING VALUES
T
j
= 25 ˚C unless otherwise stated
DAMPER
SYMBOL
V
RSM
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
PARAMETER
Peak non-repetitive reverse
voltage.
Peak repetitive reverse voltage
Crest working reverse voltage
Average forward current
RMS forward current
Peak repetitive forward current
Peak non-repetitive forward
current
sinusoidal;a=1.57
t=25
µs δ=
0.5
T
hs
≤
83 ˚C
t = 10ms
t = 8.3 ms
sinusoidal;
with reapplied
V
RWM(MAX)
CONDITIONS
MIN
-
-
-
-
-
-
-
-
MAX
1500
1500
1300
10
15.7
20
60
66
MODULATOR
MIN
-
-
-
-
-
-
-
-
MAX
800
600
600
8
11.0
16.0
60
66
UNIT
V
V
V
A
A
A
A
A
T
stg
T
J
Storage temperature
Operating junction temperature
-40
-
150
150
-40
-
150
150
˚C
˚C
March 2000
1
Rev 1.000
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
BYM359DX
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
THERMAL RESISTANCES
DAMPER
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink
compound
in free air.
TYP.
-
35
MAX.
3.5
-
MODULATOR
TYP.
-
-
MAX.
3.5
35
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
DAMPER
SYMBOL
V
F
I
R
PARAMETER
Forward voltage
Reverse current
CONDITIONS
I
F
= 6.5 A
I
F
= 6.5 A; T
j
= 125˚C
V
R
= V
RWM
V
R
= V
RWM
T
j
= 100 ˚C
TYP.
1.1
1.05
10
50
MAX.
1.45
1.3
250
500
MODULATOR
TYP.
1.15
1.1
10
100
MAX.
1.55
1.45
100
600
UNIT
V
V
µA
µA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
DAMPER
SYMBOL
t
rr
Q
s
V
fr
PARAMETER
Reverse recovery time
Reverse recovery charge
Peak forward recovery voltage
CONDITIONS
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 50 A/µs
2 A,30 V,20 A/µs
I
F
= 6.5 A;
dI
F
/dt = 50 A/µs
TYP.
200
1.2
27
MAX.
300
2.0
-
MODULATOR
TYP.
125
0.5
18.0
MAX.
145
0.7
-
UNIT
ns
µC
V
March 2000
2
Rev 1.000
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
BYM359DX
I
dI
F
dt
F
15
PF / W
Vo = 1.25 V
Rs = 0.03 Ohms
BY329
Ths(max) / C
a = 1.57
1.9
2.2
78
trr
time
10
4
5
102
2.8
126
Qs
I
I
25%
100%
R
rrm
0
0
2
4
IF(AV) / A
6
150
8
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Modulator maximum forward dissipation,
P
F
= f(I
F(AV)
); sinusoidal current waveform; parameter
a = form factor = I
F(RMS)
/I
F(AV)
.
I
F
80
70
IFS(RMS) / A
BY229
IFSM
60
50
time
VF
V
VF
time
fr
40
30
20
10
0
1ms
10ms
0.1s
tp / s
1s
10s
Fig.2. Definition of V
fr
Fig.5. Modulator maximum non-repetitive rms forward
current. I
F
= f(t
p
); sinusoidal current waveform;
T
j
= 150˚C prior to surge with reapplied V
RWM
.
20
PF / W
Vo = 1.25 V
Rs = 0.03 Ohms
BY329
Ths(max) / C
54
D = 1.0
78
30
IF / A
Tj = 150 C
Tj = 25 C
BY229F
15
0.5
0.2
0.1
I
t
p
D=
t
p
T
t
20
10
102
10
5
T
126
typ
max
0
0
2
4
6
IF(AV) / A
8
10
150
12
0
0
0.5
1
VF / V
1.5
2
Fig.3. Modulator maximum forward dissipation,
P
F
= f(I
F(AV)
); square wave current waveform;
parameter D = duty cycle = t
p
/T.
Fig.6. Modulator typical and maximum forward
characteristic; I
F
= f(V
F
); parameter T
j
March 2000
3
Rev 1.000
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
BYM359DX
10
Qs / uC
Tj = 150 C
Tj = 25 C
BY329
100
Cd / pF
BY329
IF = 10 A
10 A
2A
1
1A
2A
1A
10
0.1
1
10
-dIF/dt (A/us)
100
1
1
10
VR / V 100
1000
Fig.7. Modulator maximum Q
s
at T
j
= 25˚C and 150˚C
Fig.9. Modulator typical junction capacitance C
d
at
f = 1 MHz
;
T
j
= 25˚C
1000
trr / ns
BY329
10
Transient thermal impedance, Zth j-hs (K/W)
IF = 10 A
10A
1A
1A
100
0.1
1
0.01
P
D
t
p
D=
t
p
T
t
Tj = 150 C
Tj = 25 C
10
1
10
-dIF/dt (A/us)
100
0.001
1us
10us
T
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY229F
10s
Fig.8. Modulator maximum t
rr
measured to 25% of I
rrm
;
T
j
= 25˚C and 150˚C
Fig.10. Modulator transient thermal impedance
Z
th
= f(t
p
)
March 2000
4
Rev 1.000
Philips Semiconductors
Product specification
Dual diode
fast, high-voltage
BYM359DX
80
70
IFS(RMS) / A
BY359
IF / A
30
Tj=150C
BY359
IFSM
60
50
40
30
10
20
Tj=25C
typ
20
10
0
1ms
10ms
0.1s
tp / s
1s
10s
0
0
1.0
VF / V
2.0
max
Fig.11. Damper maximum non-repetitive rms forward
current. I
F
= f(t
p
); sinusoidal current waveform;
T
j
= 150˚C prior to surge with reapplied V
RWM
.
Transient thermal impedance, Zth j-mb (K/W)
Fig.13. Damper forward characteristic I
F
= f(V
F
);
parameter T
j
10
1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY359
10s
Fig.12. Damper transient thermal impedance
Z
th
= f(t
p
)
March 2000
5
Rev 1.000
机器人开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
