DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D113
BYG90-40 series
Schottky barrier rectifier diodes
Product specification
1996 May 06
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
FEATURES
•
Low switching losses
•
Capability of absorbing very high
surge current
•
Fast recovery time
•
Guard ring protected
•
Plastic SMD package.
APPLICATIONS
•
Low power switched-mode power
supplies
•
Rectifying
•
Polarity protection.
DESCRIPTION
The BYG 90-40 series consists of
Schottky barrier rectifier diodes,
fabricated in planar technology, and
encapsulated in rectangular
SOD106A plastic SMD packages.
Top view
cathode identifier
handbook, 4 columns
BYG90-40 series
k
k
a
a
MAM129 - 1
Fig.1 Simplified outline (SOD106A), pin configuration and symbol.
1996 May 06
2
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
R
continuous reverse voltage
BYG90-20
BYG90-30
BYG90-40
V
RRM
repetitive peak reverse voltage
BYG90-20
BYG90-30
BYG90-40
V
RWM
crest working reverse voltage
BYG90-20
BYG90-30
BYG90-40
I
F(AV)
average forward current
T
amb
= 65
°C;
see Fig.2;
R
th j-a
= 80 K/W; note 1;
V
R(equiv)
= 0.2 V; note 2
t = 8.3
µs
half sine wave;
JEDEC method
t
p
= 100
µs
−
−
−
−
−
−
−
−
−
−
PARAMETER
CONDITIONS
BYG90-40 series
MIN.
MAX.
UNIT
20
30
40
20
30
40
20
30
40
1
V
V
V
V
V
V
V
V
V
A
I
FSM
I
RSM
T
stg
T
j
Notes
non-repetitive peak forward current
non-repetitive peak reverse current
storage temperature
junction temperature
−
−
−65
−
30
0.5
+125
125
A
A
°C
°C
1. Refer to SOD106A standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
1996 May 06
3
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.2; note 1
I
F
= 1 A
I
F
= 3 A
I
F
= 1 A; T
j
= 100
°C
I
R
reverse current
V
R
= V
RRMmax
; note 1; see Fig.3
V
R
= V
RRMmax
; T
j
= 100
°C;
note 1;
see Fig.3
C
d
Note
1. Pulsed test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD106A standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
diode capacitance
V
R
= 4 V; f = 1 MHz; see Fig.4
−
−
−
−
−
−
−
−
−
−
−
−
PARAMETER
CONDITIONS
MIN.
BYG90-40 series
TYP.
MAX.
UNIT
550
850
450
1
10
75
mV
mV
mV
mA
mA
pF
CONDITIONS
note 1
VALUE
80
UNIT
K/W
1996 May 06
4
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
GRAPHICAL DATA
BYG90-40 series
10
4
handbook, halfpage
IF
(mA)
10
3
MLC388
10
4
handbook, halfpage
IR
(µA)
10
3
MLC389
(1)
(2)
(3)
10
2
(1)
(2)
(3)
(4)
10
2
(4)
10
10
1
0
0.2
0.4
0.6
0.8
V F (V)
(1)
(2)
(3)
(4)
T
amb
= 125
°C.
T
amb
= 100
°C.
T
amb
= 75
°C.
T
amb
= 25
°C.
(1)
(2)
(3)
(4)
1.0
1
0
10
20
30
V R (V) 40
T
amb
= 125
°C.
T
amb
= 100
°C.
T
amb
= 75
°C.
T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
10
3
handbook, halfpage
MLC390
Cd
(pF)
10
2
10
0
8
16
24
32 V (V) 40
R
f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
5
1996 May 06
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