Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | SMALL OUTLINE, R-CDSO-N6 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 45 V |
| 配置 | SEPARATE, 2 ELEMENTS |
| 最小直流电流增益 (hFE) | 50 |
| JEDEC-95代码 | MO-041BB |
| JESD-30 代码 | R-CDSO-N6 |
| 元件数量 | 2 |
| 端子数量 | 6 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 250 MHz |
| Base Number Matches | 1 |

| BFY82DCSM.MOD | BFY82DCSM-QR-BG4 | BFY82DCSM | BFY82DCSM.MODG4 | BFY82DCSMG4 | |
|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6 |
| 是否Rohs认证 | 不符合 | 符合 | 不符合 | 符合 | 符合 |
| 包装说明 | SMALL OUTLINE, R-CDSO-N6 | SMALL OUTLINE, R-CDSO-N6 | SMALL OUTLINE, R-CDSO-N6 | SMALL OUTLINE, R-CDSO-N6 | SMALL OUTLINE, R-CDSO-N6 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 45 V | 45 V | 45 V | 45 V | 45 V |
| 配置 | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS |
| 最小直流电流增益 (hFE) | 50 | 50 | 50 | 50 | 50 |
| JEDEC-95代码 | MO-041BB | MO-041BB | MO-041BB | MO-041BB | MO-041BB |
| JESD-30 代码 | R-CDSO-N6 | R-CDSO-N6 | R-CDSO-N6 | R-CDSO-N6 | R-CDSO-N6 |
| 元件数量 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 6 | 6 | 6 | 6 | 6 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz |
| Base Number Matches | 1 | 1 | 1 | - | - |
| 厂商名称 | - | TT Electronics plc | - | TT Electronics plc | TT Electronics plc |
| JESD-609代码 | - | e4 | - | e4 | e4 |
| 端子面层 | - | GOLD | - | GOLD | GOLD |
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