Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2720DF
DESCRIPTION
・With
TO-3PFa package
・High
voltage
・High
speed switching
・Built-in
damper diode
APPLICATIONS
・For
use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
固电
IN
导½
半
Collector-base voltage
Collector-emitter voltage
Collector current (DC)
ANG
CH
MIC
E SE
Open emitter
Open base
CONDITIONS
OR
UCT
ND
O
VALUE
1700
825
10
25
10
14
UNIT
V
V
A
A
A
A
W
℃
℃
Collector current -peak
Base Collector current (DC)
Base current -peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
45
150
-65~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU2720DF
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ;I
B
=0,L=25mH
825
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=600mA ;I
C
=0
7.5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=5.5A ;I
B
=1.38 A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=5.5A ;I
B
=1.38 A
V
CE
=BV
CES;
V
BE
=0
T
j
=125℃
V
EB
=7.5V; I
C
=0
100
1.0
V
I
CES
Collector cut-off current
1.0
2.0
mA
I
EBO
Emitter cut-off current
h
FE-1
h
FE-2
固电
IN
DC current gain
导½
半
300
mA
I
C
=0.1A ; V
CE
=5V
DC current gain
ANG
CH
MIC
E SE
I
C
=5.5A ; V
CE
=1V
OR
UCT
ND
O
22
4
5.5
7.5
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2720DF
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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