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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ
PA573T
P-CHANNEL MOSFET (5-PIN 2 CIRCUITS)
FOR SWITCHING
DESCRIPTION
The
μ
PA573T is a super-mini-mold device provided with
two MOS FET circuits. It achieves high-density mounting
and saves mounting costs.
PACKAGE DIMENSIONS (in millimeters)
0.2
+0.1
–0
0.15
+0.1
–0.05
2.1
±0.1
FEATURES
• Two source common MOS FET circuits in package the
same size as SC-70
• Directly driven by ICs having a 3 V power supply
• Automatic mounting supported
1.25
±0.1
0 to 0.1
0.7
0.65
1.3
2.0
±0.2
0.65
0.9
±0.1
<R>
EQUIVALENT CIRCUIT
5
4
PIN CONNECTION
1. Gate1 (G1)
2. Source (common)
3. Gate2 (G2)
4. Drain2 (D2)
5. Drain1 (D1)
Marking: CB
1
2
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
PW
≤
10 ms, Duty Cycle
≤
50 %
V
GS
= 0 V
V
DS
= 0 V
TEST CONDITIONS
RATINGS
–30
+7
+100
+200
200 (Total)
150
–55 to +150
UNIT
V
V
mA
mA
mW
˚C
˚C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G11245EJ3V0DS00 (3rd edition)
Date Published April 2007 N CP(K)
Printed in Japan
1996
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what." field.
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