MA700, MA700A
SILICON EPITAXIAL PLANAR TYPE
SCHOTTKY BARRIER DIODES
for ordinary wave detection
for super high speed switching
Features
• Low forward rise voltage (V
F
) and satisfactory wave
•
detection efficiency (η)
• Small temperature coefficient of forward characteristic
• Extremely low reverse current (I
R
)
Glass Case DO-34
Dimensions in mm
Min. 27.5
Max. 0.45
Max. 0.5
Max. 1.9
Min. 27.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX
Max. 2.9
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Forward Current
Peak Forward Current
Junction Temperature
Storage Temperature Range
MA700
MA700A
MA700
MA700A
Symbol
V
RM
V
R
I
F
I
FM
T
j
T
S
Value
15
30
15
30
30
150
125
- 55 to + 125
Unit
V
V
mA
mA
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 1 mA
at I
F
= 30 mA
Reverse Current
at V
R
= 15 V
at V
R
= 30 V
Terminal Capacitance
at V
R
= 1 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
rr
= 1 mA, R
L
= 100
Ω
Detection Efficiency
at V
in
= 3 V
(peak)
, f = 30 MHz, R
L
= 3.9 KΩ, C
L
= 10 pF
MA700
MA700A
Symbol
V
F
Typ.
-
-
-
-
1.3
1
60
Max.
0.4
1
600
600
-
-
-
Unit
V
I
R
C
T
t
rr
nA
pF
ns
%
η
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/08/2007
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