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HN2D01JE(TPL3,F)

产品描述ARRAY OF INDEPENDENT DIODES,TSOP
产品类别分立半导体    二极管   
文件大小213KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

HN2D01JE(TPL3,F)概述

ARRAY OF INDEPENDENT DIODES,TSOP

HN2D01JE(TPL3,F)规格参数

参数名称属性值
是否Rohs认证符合
Reach Compliance Codeunknown
ECCN代码EAR99
最大正向电压 (VF)1.2 V
最高工作温度150 °C
最低工作温度-55 °C
最大功率耗散0.1 W
最大重复峰值反向电压85 V
最大反向电流0.5 µA
反向测试电压80 V
表面贴装YES
Base Number Matches1

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HN2D01JE
TOSHIBA Diode
Silicon Epitaxial Planar Type
HN2D01JE
Ultra High Speed Switching Application
The HN2D01JE is composed of 2 independent diodes.
Low forward voltage
: V
F (3)
= 0.98V (typ.)
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
Small total capacitance
: C
T
= 0.5pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
85
80
200 *
100 *
1*
100 **
150
−55∼150
Unit
V
V
mA
mA
A
mW
°C
°C
1.ANODE1
2.NC
3.ANODE2
4.CATHODE2
5.CATHODE1
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating; total rating = unit rating × 1.5.
**: Total rating.
JEDEC
JEITA
1-2W1B
TOSHIBA
Weight: 0.003 mg (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 30V
V
R
= 80V
V
R
= 0, f = 1MH
z
I
F
= 10mA, Fig.1
Min
Typ.
0.62
0.75
0.98
0.5
1.6
Max
1.20
0.1
0.5
μA
pF
ns
V
Unit
1
2007-11-01

HN2D01JE(TPL3,F)相似产品对比

HN2D01JE(TPL3,F) HN2D01JE(TE85L)
描述 ARRAY OF INDEPENDENT DIODES,TSOP ARRAY OF INDEPENDENT DIODES,TSOP
是否Rohs认证 符合 不符合
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
最大正向电压 (VF) 1.2 V 1.2 V
最高工作温度 150 °C 150 °C
最低工作温度 -55 °C -55 °C
最大功率耗散 0.1 W 0.1 W
最大重复峰值反向电压 85 V 85 V
最大反向电流 0.5 µA 0.5 µA
反向测试电压 80 V 80 V
表面贴装 YES YES
Base Number Matches 1 1

 
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