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CTA30-800BPT

产品描述TRIAC, 800V V(DRM), 30A I(T)RMS, TO-220AB, ISOLATED TO-220AB, 3 PIN
产品类别模拟混合信号IC    触发装置   
文件大小852KB,共2页
制造商Cynergy 3
标准
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CTA30-800BPT概述

TRIAC, 800V V(DRM), 30A I(T)RMS, TO-220AB, ISOLATED TO-220AB, 3 PIN

CTA30-800BPT规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码TO-220AB
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
Reach Compliance Codeunknown
其他特性UL RECOGNIZED
外壳连接ISOLATED
配置SINGLE
换向电压的临界上升率-最小值10 V/us
关态电压最小值的临界上升速率500 V/us
最大直流栅极触发电流50 mA
最大直流栅极触发电压1.3 V
最大维持电流75 mA
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大漏电流0.005 mA
元件数量1
端子数量3
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大均方根通态电流30 A
断态重复峰值电压800 V
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
触发设备类型TRIAC
Base Number Matches1

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POWER COMPONENTS
Applications
Phase Control
Static Switching
Light Dimming
Motor Speed Control
Kitchen Equipment
Power Tools
Solenoid Valve Controls:
Dishwashers
Washing Machines
>
Suitable for General Purpose AC Switching
>
IGT 50mA
>
V
DRM
/V
RMM
400, 600, 800V
CTA30/CTB35
400/600/800V -
TRIAC
RATING
SYMBOL
IT
(RMS)
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State Current
(Full Cycle, Tj Initial = 25
˚
C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
=2 x I
GT
, tr<100 ns, T
j
= 125
˚
C
Tc = 95˚C
Tc = 70˚C
CONDITIONS
TO-220AB
TO-220AB Iso
F =50 Hz
F =60 Hz
tp = 10 ms
35A (CTB)
30A (CTA)
335A
350A
500A
2
s
100A/µsec
4A
1W
-40 to +150
˚
C
-40 to +125
˚
C
2500 V
RMS
“B”
I
TSM
I
2
t
di/dt
A1
A2
Peak Gate Current @ T
j
= 125˚C
G
tp = 20 µs
Average Gate Power Dissipation @ Tj = 125
˚
C
Storage Temperature Range
A2
I
GM
P
G(AV
)
T
stg
T
j
V
ISO
TO-220AB Isolated
(CTA30)
Operating Junction Temperature Range
Isolation Voltage (CTA Series only)
Electrical Characteristics
A1
A2
STANDARD (4 Quadrants)
G
TO-220AB Non-Isolated
(CTB35)
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
I
GT
MAX @ V
D
=12 V, R
L
= 30Ω
NOTE 1
V
GT
MAX @ V
D
=12 V, R
L
= 30Ω
V
GD
MIN @ V
D
=V
DRM
, R
L
= 3.3kΩ
Tj = 125
˚
C
I
H
MAX @ I
T
= 500 mA
I
L
MAX @ I
G
= 1.2 I
GT
I
L
MAX @ I
G
= 1.2 I
GT
NOTE 2
NOTE 1
QI-II-III
QIV
Q-AII
Q-AII
QI-III-IV
Q-II
NOTE 2
50mA
100 mA
1.3V
0.2 V
75mA
75mA
100mA
500V/µsec
10V/µsec
A2
G
A1
dv/dt MIN @ V
D
= 67%V
DRM
(gate open)
(dv/dt)c MIN @ (di/dt)c = 13.3 A/ms
NOTE 2
Tj = 125˚C
Tj = 125˚C
Static Characteristics
V
T
MAX @ I
TM
=48 A, tp = 380µs
NOTE 2
Vto MAX @ Threshold Voltage
Rd MAX @ Dynamic Resistance
NOTE 2
I
DRM
MAX @ V
DRM =
V
RRM
NOTE 2
Tj = 25˚C
Tj = 125˚C
Tj = 125˚C
Tj = 25˚C
Tj = 125˚C
1.55 V
0.85 V
16 m
5µA
3 mA
ISO9001 Certified
I
RRM
MAX @ V
DRM =
V
RRM
GENERAL NOTES
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1
3. All parameters at 25 degrees C unless otherwise specified.

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