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UPD4481322F9-C75-EQX

产品描述ZBT SRAM, 256KX32, 4.2ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165
产品类别存储    存储   
文件大小224KB,共40页
制造商NEC(日电)
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UPD4481322F9-C75-EQX概述

ZBT SRAM, 256KX32, 4.2ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165

UPD4481322F9-C75-EQX规格参数

参数名称属性值
零件包装代码BGA
包装说明BGA,
针数165
Reach Compliance Codeunknown
ECCN代码3A991.B.2.A
最长访问时间4.2 ns
JESD-30 代码R-PBGA-B165
长度15 mm
内存密度8388608 bit
内存集成电路类型ZBT SRAM
内存宽度32
功能数量1
端子数量165
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX32
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
认证状态Not Qualified
最大供电电压 (Vsup)2.625 V
最小供电电压 (Vsup)2.375 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
宽度13 mm
Base Number Matches1

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PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD4481162, 4481182, 4481322, 4481362
8M-BIT ZEROSB
TM
SRAM
PIPELINED OPERATION
Description
The
µ
PD4481162 is a 524,288-word by 16-bit, the
µ
PD4481182 is a 524,288-word by 18-bit, the
µ
PD4481322 is a
262,144-word by 32-bit and the
µ
PD4481362 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with
advanced CMOS technology using full CMOS six-transistor memory cell.
The
µ
PD4481162,
µ
PD4481182,
µ
PD4481322 and
µ
PD4481362 are optimized to eliminate dead cycles for read to
write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit
burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the
single clock input (CLK).
The
µ
PD4481162,
µ
PD4481182,
µ
PD4481322 and
µ
PD4481362 are suitable for applications which require
synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”).
In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal
operation.
The
µ
PD4481162,
µ
PD4481182,
µ
PD4481322 and
µ
PD4481362 are packaged in 100-pin PLASTIC LQFP with a 1.4
mm package thickness or 165-pin TAPE FBGA for high density and low capacitive loading.
Features
Low voltage core supply (A version : V
DD
= 3.3 ± 0.165V, C version : V
DD
= 2.5 ± 0.125V)
Synchronous operation
100 percent bus utilization
Internally self-timed write control
Burst read / write : Interleaved burst and linear burst sequence
Fully registered inputs and outputs for pipelined operation
All registers triggered off positive clock edge
3.3V or 2.5V LVTTL Compatible : All inputs and outputs
Fast clock access time : 3.2 ns (200 MHz), 3.5 ns (167 MHz) , 4.2 ns (133 MHz)
Asynchronous output enable : /G
Burst sequence selectable : MODE
Sleep mode : ZZ (ZZ = Open or Low : Normal operation)
Separate byte write enable : /BW1 - /BW4 (
µ
PD4481322 and
µ
PD4481362), /BW1 - /BW2 (
µ
PD4481162 and
µ
PD4481182)
Three chip enables for easy depth expansion
Common I/O using three state outputs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M15562EJ1V0DS00 (1st edition)
Date Published June 2001 NS CP(K)
Printed in Japan
©
2001

 
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