MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF21045/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 –5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power = 10 Watts Avg.
Efficiency = 23.5%
Gain = 15 dB
IM3 = –37.5 dBc
ACPR = –41 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Ease of Design for Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF21045
MRF21045S
2170 MHz, 45 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465E–02, STYLE 1
(MRF21045)
CASE 465F–02, STYLE 1
(MRF21045S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
+15, –0.5
105
0.60
– 65 to +200
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Typical)
M2 (Typical)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
1.65
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
RF DEVICE DATA
©
Motorola, Inc. 2001
MRF21045 MRF21045S
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100
µAdc)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100
µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.8
—
pF
VGS(th)
VGS(Q)
VDS(on)
gfs
2
3
—
—
—
3.9
0.19
3
4
5
0.21
—
Vdc
Vdc
Vdc
S
V(BR)DSS
IDSS
IGSS
65
—
—
—
—
—
—
10
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture) 2–carrier W–CDMA. Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Drain Efficiency
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz Bandwidth at f1 –10 MHz and f2 +10 MHz.)
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz Bandwidth at f1 –5 MHz and f2 +5 MHz.)
Input Return Loss
(VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 500 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
Gps
13.5
15
—
dB
η
21
23.5
—
%
IM3
—
–37.5
–35
dBc
ACPR
—
–41
–38
dBc
IRL
—
–12
–9
dB
Ψ
No Degradation In Output Power
Before and After Test
MRF21045 MRF21045S
2
RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted)
Characteristic
FUNCTIONAL TESTS
(In Motorola Test Fixture) — continued
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two–Tone Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz)
Gps
—
14.9
—
dB
Symbol
Min
Typ
Max
Unit
η
—
36
—
%
IMD
—
–30
—
dBc
IRL
—
–12
—
dB
P1dB
—
50
—
W
RF DEVICE DATA
MRF21045 MRF21045S
3
VGG
R1
+
R2
C5
C4
C3
R3
B1
+
C2
C7
C8
R4
VDD
L1
C9
C10
+
C11
Z5
RF
INPUT
Z10
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
DUT
Z6
Z7
Z8
C6
Z9
Z1, Z9
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10
0.750″ x 0.084″ Transmission Line
0.160″ x 0.084″ Transmission Line
1.195″ x 0.176″ Transmission Line
0.125″ x 0.320″ Transmission Line
1.100″ x 0.045″ Transmission Line
0.442″ x 0.650″ Transmission Line
0.490″ x 0.140″ Transmission Line
0.540″ x 0.084″ Transmission Line
0.825″ x 0.055″ Transmission Line
Board
PCB
0.030″ Glass Teflon
®
,
Keene GX–0300–55–22,
ε
r = 2.55
Etched Circuit Boards
MRF21045 Rev. 3, CMR
Figure 1. MRF21045 Test Circuit Schematic
Table 1. MRF21045 Component Designations and Values
Designators
B1
C1, C2, C6
C7
C3, C9
C4, C10
C5
C8
C11
L1
N1, N2
R1
R2
R3, R4
Description
Short Ferrite Bead, Fair Rite, #2743019447
43 pF Chip Capacitors, ATC #100B430JCA500X
5.6 pF Chip Capacitor, ATC #100B5R6JCA500X
1000 pF Chip Capacitors, ATC #100B102JCA500X
0.1
m
F Chip Capacitors, Kemet #CDR33BX104AKWS
1.0
m
F Tantalum Chip Capacitor, Kemet #T491C105M050
10
m
F Tantalum Chip Capacitor, Kemet #T495X106K035AS4394
22
m
F Tantalum Chip Capacitor, Kemet #T491X226K035AS4394
1 Turn, #20 AWG, 0.100″ ID, Motorola
Type N Flange Mounts, Omni Spectra #3052–1648–10
1.0 kΩ, 1/8 W Chip Resistor
180 kΩ, 1/8 W Chip Resistor
10
Ω,
1/8 W Chip Resistors
MRF21045 MRF21045S
4
RF DEVICE DATA
C8
C7
R1
B1 R3
C2
L1
C10 R4
C9
R2
C5
C4 C3
C11
C6
WB1
WB2
C1
MRF21045
Figure 2. MRF21045 Test Circuit Component Layout
RF DEVICE DATA
MRF21045 MRF21045S
5
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