MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9045M/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
Designed for broadband commercial and industrial applications at frequen-
cies up to 1.0 GHz. The high gain and broadband performance of this device
make it ideal for large–signal, common–source amplifier applications in 28 volt
base station equipment.
•
Typical Performance at 945 MHz, 28 Volts
Output Power – 45 Watts PEP
Power Gain – 18.5 dB
Efficiency – 41% (Two Tones)
IMD – –31 dBc
•
Integrated ESD Protection
•
Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts (CW) Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance
Parameters
•
Moisture Sensitivity Level 3
•
RF Power Plastic Surface Mount Package
•
Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
N–Channel Enhancement–Mode Lateral MOSFET
MRF9045M
MRF9045MR1
945 MHz, 45 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265–06, STYLE 1
(TO–270)
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
+ 15, – 0.5
156(1)
1.25(1)
– 65 to +150
150
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Typical)
M2 (Typical)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Simulated
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Symbol
R
θJC
Max
0.8(1)
Unit
°C/W
REV 0
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2000
MRF9045M MRF9045MR1
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 )
IDSS
IDSS
IGSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150
µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 350 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
VGS(th)
VGS(Q)
VDS(on)
gfs
2
—
—
—
—
3.7
0.19
4
4
—
0.4
—
Vdc
Vdc
Vdc
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Ciss
Coss
Crss
—
—
—
74
39
1.9
—
—
—
pF
pF
pF
(continued)
MRF9045M MRF9045MR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two–Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
17
18.5
—
dB
η
38
41
—
%
IMD
—
–31
–28
dBc
IRL
9
15
—
dB
Gps
—
18.5
—
dB
η
—
41
—
%
IMD
—
–31
—
dBc
IRL
—
13
—
dB
MOTOROLA RF DEVICE DATA
MRF9045M MRF9045MR1
3
B1
VGG
+
C6
C7
C14
B2
+
C15
+
C16
+
VDD
C17
L1
RF
INPUT Z1
C5
C1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C9
Z9
Z10
L2
RF
OUTPUT
Z13
Z11
Z12
C13
C2
C3
C4
DUT
C8
C10
C11
C12
B1, B2
C1, C7, C13, C14
C2, C8
C3
C4, C5, C8, C9
C6
C10
C11
C12
C17
L1, L2
Z1
Z2
Short Ferrite Beads, Surface Mount
47 pF, Chip Capacitors, B Case
2.7 pF, Chip Capacitors, B Case
3.9 pF, Chip Capacitor, B Case
10 pF, Chip Capacitors, B Case
10
µF,
35 V Tantalum Surface Mount Capacitor
2.2 pF, Chip Capacitor, B Case
4.7 pF, Chip Capacitor, B Case
1.2 pF, Chip Capacitor, B Case
220
µF,
50 V Electrolytic Capacitor
12.5 nH, Inductors
0.20″ x 0.08″
0.57″ x 0.12″
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
0.14″ x 0.32″
0.47″ x 0.32″
0.16″ x 0.32″ x 0.62″ Tapered
0.18″ x 0.62″
0.56″ x 0.62″
0.33″ x 0.32″
0.14″ x 0.32″
0.36″ x 0.08″
1.01″ x 0.08″
0.15″ x 0.08″
0.29″ x 0.08″
Figure 1. 945 MHz Broadband Test Circuit Schematic
C6
Vbias
B1
B2
C7
C5
WB1
WB2
C4
CUT OUT AREA
C9
C8
C10 C11
C12 C13
C14
L2
C15 C16
A2
C17
Vsupply
L1
A1
C1
C2
C3
Ground
MRF9045M
Ground
Figure 2. 945 MHz Broadband Test Circuit Components Layout
MRF9045M MRF9045MR1
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
h
, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB)
,
h
, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB)
,
50
45
40
35
30
25
20
15
10
5
900
920
940
960
980
1000
f, FREQUENCY (MHz)
IMD3
–35
Gps
IRL
VDD = 28 Vdc
Pout = 45 Watts (PEP)
IDQ = 350 mA
Two–Tone Measurement
100 kHz Tone Spacing
–15
–5
60
50
40
30
20
10
0
0.5
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
0
–10
–20
–30
Gps
–40
h
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATIONDISTORTION (dBc)
IRL
–25
h
–50
–60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. Class AB Test Circuit Performance
Figure 4. Power Gain, Efficiency and IRL versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
1
10
Pout, OUTPUT POWER (WATTS) PEP
100
7th Order
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement,
100 kHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
–25
–30
–35
–40
IDQ = 350 mA
–45
–50
–55
–60
0.5
IDQ = 500 mA
VDD = 28 Vdc
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
1
10
Pout, OUTPUT POWER (WATTS) PEP
100
IDQ = 200 mA
3rd Order
5th Order
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
20
Gps
G ps , POWER GAIN (dB)
15
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
10
60
P out , OUTPUT POWER (WATTS) PEP
50
40
30
h
20
10
5
0.5
0
1
10
100
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
22
24
Pin = 1 W
h
, DRAIN EFFICIENCY (%)
Pin = 0.6 W
Pin = 0.3 W
IDQ = 350 mA
f = 945 MHz
Two–Tone Measurement
100 kHz Tone Spacing
28
30
32
26
Pout, OUTPUT POWER (WATTS CW)
VDD, DRAIN VOLTAGE (VOLTS)
Figure 7. CW Power Gain and Drain Efficiency
versus Output Power
Figure 8. Output Voltage versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF9045M MRF9045MR1
5
IRL, INPUT RETURN LOSS (dB)
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