电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RS1BLHRU

产品描述Rectifier Diode, 1 Element, 0.8A, 100V V(RRM), Silicon, SMA, 2 PIN
产品类别分立半导体    二极管   
文件大小373KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

RS1BLHRU概述

Rectifier Diode, 1 Element, 0.8A, 100V V(RRM), Silicon, SMA, 2 PIN

RS1BLHRU规格参数

参数名称属性值
是否Rohs认证符合
包装说明SMA, 2 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-F2
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流0.8 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
参考标准AEC-Q101
最大重复峰值反向电压100 V
最大反向恢复时间0.15 µs
表面贴装YES
端子面层Matte Tin (Sn)
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间30
Base Number Matches1

文档预览

下载PDF文档
RS1AL thru RS1ML
Taiwan Semiconductor
CREAT BY ART
Surface Mount Fast Recovery Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Fast switching for high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.8 A
Maximum reverse current @ rated VR T
J
=25
T
J
=125
Typical junction capacitance (Note 2)
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
Trr
R
θjL
R
θjA
T
J
T
STG
150
32
105
- 55 to +150
- 55 to +150
SYMBOL
RS1
AL
RAL
50
35
50
RS1
BL
RBL
100
70
100
RS1
DL
RDL
200
140
200
RS1
GL
RGL
400
280
400
0.8
30
1.3
5
50
10
250
500
O
RS1
JL
RJL
600
420
600
RS1
KL
RKL
800
560
800
RS1
ML
RML
1000
700
1000
UNIT
V
V
V
A
A
V
μA
pF
ns
C/W
O
O
C
C
Document Number: DS_D1405034
Version: K14

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1978  1380  1538  42  452  9  23  4  44  47 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved