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IDT72V2103L7-5PFI

产品描述FIFO, 128KX18, 5ns, Synchronous, CMOS, PQFP80
产品类别存储    存储   
文件大小445KB,共46页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

IDT72V2103L7-5PFI概述

FIFO, 128KX18, 5ns, Synchronous, CMOS, PQFP80

IDT72V2103L7-5PFI规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
包装说明TQFP-80
Reach Compliance Codenot_compliant
ECCN代码EAR99
最长访问时间5 ns
备用内存宽度9
最大时钟频率 (fCLK)133.3 MHz
周期时间7.5 ns
JESD-30 代码S-PQFP-G80
JESD-609代码e0
内存密度2359296 bit
内存集成电路类型OTHER FIFO
内存宽度18
湿度敏感等级3
功能数量1
端子数量80
字数131072 words
字数代码128000
工作模式SYNCHRONOUS/ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织128KX18
可输出YES
封装主体材料PLASTIC/EPOXY
封装代码QFP
封装等效代码QFP80,.64SQ
封装形状SQUARE
封装形式FLATPACK
并行/串行PARALLEL
峰值回流温度(摄氏度)240
电源3.3 V
认证状态Not Qualified
最大待机电流0.015 A
最大压摆率0.035 mA
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn85Pb15)
端子形式GULL WING
端子节距0.635 mm
端子位置QUAD
处于峰值回流温度下的最长时间20
Base Number Matches1

文档预览

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3.3 VOLT HIGH-DENSITY SUPERSYNC II™
NARROW BUS FIFO
131,072 x 18/262,144 x 9
262,144 x 18/524,288 x 9
IDT72V2103
IDT72V2113
FEATURES:
Choose among the following memory organizations:
IDT72V2103
131,072 x 18/262,144 x 9
IDT72V2113
262,144 x 18/524,288 x 9
Functionally compatible with the IDT72V255LA/72V265LA and
IDT72V275/72V285 SuperSync FIFOs
Up to 166 MHz Operation of the Clocks
User selectable Asynchronous read and/or write ports (BGA Only)
7.5 ns read/write cycle time (5.0 ns access time)
User selectable input and output port bus-sizing
- x9 in to x9 out
- x9 in to x18 out
- x18 in to x9 out
- x18 in to x18 out
Big-Endian/Little-Endian user selectable byte representation
5V tolerant inputs
Fixed, low first word latency
Zero latency retransmit
Auto power down minimizes standby power consumption
Master Reset clears entire FIFO
Partial Reset clears data, but retains programmable settings
Empty, Full and Half-Full flags signal FIFO status
Programmable Almost-Empty and Almost-Full flags, each flag can
default to one of eight preselected offsets
Selectable synchronous/asynchronous timing modes for Almost-
Empty and Almost-Full flags
Program programmable flags by either serial or parallel means
Select IDT Standard timing (using
EF
and
FF
flags) or First Word
Fall Through timing (using
OR
and
IR
flags)
Output enable puts data outputs into high impedance state
Easily expandable in depth and width
JTAG port, provided for Boundary Scan function (BGA Only)
Independent Read and Write Clocks (permit reading and writing
simultaneously)
Available in a 80-pin Thin Quad Flat Pack (TQFP) or a 100-pin Ball
Grid Array (BGA) (with additional features)
Pin compatible to the SuperSync II (IDT72V223/72V233/72V243/
72V253/72V263/72V273/72V283/72V293) family
High-performance submicron CMOS technology
Industrial temperature range (–40°C to +85°C) is available
°
°
FUNCTIONAL BLOCK DIAGRAM
*Available on the
BGA package only.
D
0
-D
n
(x9 or x18)
WEN
WCLK/WR
*
INPUT REGISTER
LD SEN
OFFSET REGISTER
FF/IR
PAF
EF/OR
PAE
HF
FWFT/SI
PFM
FSEL0
FSEL1
*
ASYW
WRITE CONTROL
LOGIC
FLAG
LOGIC
RAM ARRAY
131,072 x 18 or 262,144 x 9
262,144 x 18 or 524,288 x 9
WRITE POINTER
READ POINTER
BE
IP
IW
OW
MRS
PRS
CONTROL
LOGIC
BUS
CONFIGURATION
RESET
LOGIC
OUTPUT REGISTER
READ
CONTROL
LOGIC
RT
RM
ASYR
*
RCLK/RD
*
*
**
*
TCK
TRST
TMS
TDI
TDO
JTAG CONTROL
(BOUNDARY
SCAN)
*
OE
Q
0
-Q
n
(x9 or x18)
REN
*
6119 drw01
IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc. SuperSync II FIFO is a trademark of Integrated Device Technology, Inc.
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
1
2003 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.
SEPTEMBER 2003
DSC-6119/10

IDT72V2103L7-5PFI相似产品对比

IDT72V2103L7-5PFI IDT72V2113L7-5PFI
描述 FIFO, 128KX18, 5ns, Synchronous, CMOS, PQFP80 FIFO, 256KX18, 5ns, Synchronous, CMOS, PQFP80
是否无铅 含铅 含铅
是否Rohs认证 不符合 不符合
包装说明 TQFP-80 TQFP-80
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
最长访问时间 5 ns 5 ns
备用内存宽度 9 9
最大时钟频率 (fCLK) 133.3 MHz 133.3 MHz
周期时间 7.5 ns 7.5 ns
JESD-30 代码 S-PQFP-G80 S-PQFP-G80
JESD-609代码 e0 e0
内存密度 2359296 bit 4718592 bit
内存集成电路类型 OTHER FIFO OTHER FIFO
内存宽度 18 18
湿度敏感等级 3 3
功能数量 1 1
端子数量 80 80
字数 131072 words 262144 words
字数代码 128000 256000
工作模式 SYNCHRONOUS/ASYNCHRONOUS SYNCHRONOUS/ASYNCHRONOUS
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
组织 128KX18 256KX18
可输出 YES YES
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QFP QFP
封装等效代码 QFP80,.64SQ QFP80,.64SQ
封装形状 SQUARE SQUARE
封装形式 FLATPACK FLATPACK
并行/串行 PARALLEL PARALLEL
峰值回流温度(摄氏度) 240 240
电源 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified
最大待机电流 0.015 A 0.015 A
最大压摆率 0.035 mA 0.035 mA
最大供电电压 (Vsup) 3.45 V 3.45 V
最小供电电压 (Vsup) 3.15 V 3.15 V
标称供电电压 (Vsup) 3.3 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 GULL WING GULL WING
端子节距 0.635 mm 0.635 mm
端子位置 QUAD QUAD
处于峰值回流温度下的最长时间 20 20
Base Number Matches 1 1

 
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