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FM93CS06LVM8

产品描述EEPROM, 16X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8
产品类别存储    存储   
文件大小168KB,共16页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
下载文档 详细参数 全文预览

FM93CS06LVM8概述

EEPROM, 16X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8

FM93CS06LVM8规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codeunknown
ECCN代码EAR99
最大时钟频率 (fCLK)0.25 MHz
数据保留时间-最小值40
耐久性1000000 Write/Erase Cycles
JESD-30 代码R-PDSO-G8
JESD-609代码e0
长度4.9 mm
内存密度256 bit
内存集成电路类型EEPROM
内存宽度16
功能数量1
端子数量8
字数16 words
字数代码16
工作模式SYNCHRONOUS
最高工作温度125 °C
最低工作温度-40 °C
组织16X16
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
电源3/5 V
认证状态Not Qualified
座面最大高度1.75 mm
串行总线类型MICROWIRE
最大待机电流0.00001 A
最大压摆率0.001 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度3.9 mm
最长写入周期时间 (tWC)15 ms
写保护HARDWARE/SOFTWARE
Base Number Matches1

文档预览

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FM93CS06 (MICROWIRE Bus Interface) 256-Bit Serial EEPROM
with Data Protect and Sequential Read
July 2000
FM93CS06
(MICROWIRE™ Bus Interface) 256-Bit Serial EEPROM
with Data Protect and Sequential Read
General Description
FM93CS06 is a 256-bit CMOS non-volatile EEPROM organized
as 16 x 16-bit array. This device features MICROWIRE interface
which is a 4-wire serial bus with chipselect (CS), clock (SK), data
input (DI) and data output (DO) signals. This interface is compat-
ible to many of standard Microcontrollers and Microprocessors.
FM93CS06 offers programmable write protection to the memory
array using a special register called Protect Register. Selected
memory locations can be protected against write by programming
this Protect Register with the address of the first memory location
to be protected (all locations greater than or equal to this first
address are then protected from further change). Additionally, this
address can be “permanently locked” into the device, making all
future attempts to change data impossible. In addition this device
features “sequential read”, by which, entire memory can be read
in one cycle instead of multiple single byte read cycles. There are
10 instructions implemented on the FM93CS06, 5 of which are for
memory operations and the remaining 5 are for Protect Register
operations. This device is fabricated using Fairchild Semiconduc-
tor floating-gate CMOS process for high reliability, high endurance
and low power consumption.
“LZ” and “L” versions of FM93CS06 offer very low standby current
making them suitable for low power applications. This device is offered
in both SO and TSSOP packages for small space considerations.
Features
I
Wide V
CC
2.7V - 5.5V
I
Programmable write protection
I
Sequential register read
I
Typical active current of 200µA
10µA standby current typical
1µA standby current typical (L)
0.1µA standby current typical (LZ)
I
No Erase instruction required before Write instruction
I
Self timed write cycle
I
Device status during programming cycles
I
40 year data retention
I
Endurance: 1,000,000 data changes
I
Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
Functional Diagram
CS
SK
DI
INSTRUCTION
REGISTER
V
CC
INSTRUCTION
DECODER
CONTROL LOGIC
AND CLOCK
GENERATORS
PRE
PE
ADDRESS
REGISTER
PROTECT
REGISTER
COMPARATOR
AND
WRITE ENABLE
HIGH VOLTAGE
GENERATOR
AND
PROGRAM
TIMER
DECODER
EEPROM ARRAY
16
READ/WRITE AMPS
16
V
SS
DATA IN/OUT REGISTER
16 BITS
DO
DATA OUT BUFFER
© 2000 Fairchild Semiconductor International
FM93CS06 Rev. C.1
1
www.fairchildsemi.com
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