BUZ 305
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on
)
Package
Ordering Code
BUZ 305
800 V
7.5 A
1
Ω
TO-218 AA
C67078-S3134-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 31 °C
Pulsed drain current
T
C
= 25 °C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
D
= 7.5 A,
V
DD
= 50 V,
R
GS
= 25
Ω
L
= 27.7 mH,
T
j
= 25 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
I
D
7.5
I
Dpuls
30
I
AR
E
AR
E
AS
7.5
16
A
mJ
830
V
GS
P
tot
150
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
°C
±
20
V
W
≤
0.83
75
E
55 / 150 / 56
K/W
Semiconductor Group
1
01/97
BUZ 305
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
V
DS
= 800 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 800 V,
V
GS
= 0 V,
T
j
= 125 °C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
V
GS
= 10 V,
I
D
= 5 A
V
(BR)DSS
800
V
GS(th)
2.1
I
DSS
-
-
I
GSS
-
R
DS(on)
-
0.85
1
10
100
0.1
10
1
100
3
4
-
-
V
µA
nA
Ω
Semiconductor Group
2
01/97
BUZ 305
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Values
typ.
max.
Unit
Transconductance
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 5 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
Ω
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
Ω
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
Ω
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 2.7 A
R
GS
= 50
Ω
g
fs
2.5
C
iss
-
C
oss
-
C
rss
-
t
d(on)
130
200
220
330
2000
2650
7.5
-
S
pF
ns
-
t
r
30
45
-
t
d(off)
120
180
-
t
f
500
670
-
150
200
Semiconductor Group
3
01/97
BUZ 305
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Values
typ.
max.
Unit
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 15 A
Reverse recovery time
V
R
= 100 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
I
S
-
I
SM
-
V
SD
-
t
rr
-
Q
rr
-
15
-
750
-
0.95
1.4
-
30
-
7.5
A
V
ns
µC
Semiconductor Group
4
01/97
BUZ 305
Power dissipation
P
tot
=
ƒ
(T
C
)
Drain current
I
D
=
ƒ
(T
C
)
parameter:
V
GS
≥
10 V
8.0
160
W
P
tot
I
D
120
A
6.0
100
5.0
80
4.0
60
3.0
40
2.0
20
0
0
1.0
0.0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
160
T
C
T
C
Safe operating area
I
D
=
ƒ
(V
DS
)
parameter:
D
= 0.01,
T
C
= 25°C
10
2
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
0
A
I
D
10
1
/
I
D
t
p = 1000.0ns
10 µs
K/W
Z
thJC
10
-1
100 µs
DS
=
V
1 ms
DS
(on
D = 0.50
10 ms
)
0.20
10
-2
0.10
0.05
single pulse
0.02
0.01
10
0
R
DC
10
-1
0
10
10
1
10
2
V 10
3
10
-3
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
V
DS
t
p
Semiconductor Group
5
01/97
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