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Datasheet> 器件分类 > 分立半导体> 晶体管> BDS61C

BDS61C: 产品描述TRANSISTOR 3000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小135KB，共6页; 制造商NXP(恩智浦); 官网地址https://www.nxp.com

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BDS61C概述

TRANSISTOR 3000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

BDS61C规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR
外壳连接	COLLECTOR
最大集电极电流 (IC)	3 A
集电极-发射极最大电压	120 V
配置	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)	1000
JESD-30 代码	R-PDSO-G4
元件数量	1
端子数量	4
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
最大关闭时间（toff）	8000 ns
最大开启时间（吨）	2000 ns
Base Number Matches	1

BDS61C相似产品对比

	BDS61C	BDS61B	HCHP1206L2R20GF151	BDS61	BDS61C-T	BDS61A-T	BDS61-T	BDS61A
描述	TRANSISTOR 3000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 3000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Fixed Resistor, Metal Glaze/thick Film, 0.25W, 2.2ohm, 200V, 2% +/-Tol, -200,200ppm/Cel, 1207,	TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 3000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Reach Compliance Code	unknown	unknown	compliant	unknown	unknown	unknown	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
端子数量	4	4	2	4	4	4	4	4
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
包装说明	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	-	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
其他特性	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	-	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
外壳连接	COLLECTOR	COLLECTOR	-	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	3 A	3 A	-	3 A	3 A	3 A	3 A	3 A
集电极-发射极最大电压	120 V	100 V	-	60 V	120 V	80 V	60 V	80 V
配置	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	-	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)	1000	1000	-	1000	1000	1000	1000	1000
JESD-30 代码	R-PDSO-G4	R-PDSO-G4	-	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
元件数量	1	1	-	1	1	1	1	1
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
极性/信道类型	NPN	NPN	-	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	-	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON
最大关闭时间（toff）	8000 ns	8000 ns	-	8000 ns	8000 ns	8000 ns	8000 ns	8000 ns
最大开启时间（吨）	2000 ns	2000 ns	-	2000 ns	2000 ns	2000 ns	2000 ns	2000 ns
厂商名称	-	NXP(恩智浦)	-	NXP(恩智浦)	-	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)

BDS61C

BDS61C概述

BDS61C规格参数

BDS61C相似产品对比

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