PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
Description
The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212401E
Package H-36260-2
PTFA212401F
Package H-37260-2
Features
Single-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
clipping, PAR = 8.5 dB, 3.84 MHz BW
•
•
35
30
Thermally-enhanced packages, Pb-free and
RoHS compliant
Broadband internal matching
Typical two-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8 dB
- Average output power = 47.0 dBm
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35 dBc
- Adjacent channel power = –40 dBc
Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output power = 49 dBm
- Linear Gain = 15.8 dB
- Efficiency = 34%
- Adjacent channel power = –33 dBc
Typical CW performance, 2140 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 54%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 5:1 VSWR @ 30 V,
240 W (CW) output power
Adjacent Channel Power Ratio (dB)
-30
-35
•
ACPR Up
-40
-45
-50
-55
-60
36
38
40
42
44
46
48
25
ACPR Low
20
15
Drain Efficiency (%)
•
Efficiency
10
5
•
Average Output Power (dBm)
•
•
•
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
*See Infineon distributor for future availability.
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
RF Characteristics
Two-Carrier WCDMA Measurements
(tested in Infineon test fixture)
ƒ
1
= 2135 MHz, ƒ
2
= 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
V
DD
= 30 V, I
DQ
= 1.6 A, P
OUT
= 50 W average
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
14.8
26
—
Typ
15.8
28
–35.0
Max
—
—
–33
Unit
dB
%
dBc
η
D
IMD
Two-tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.6 A, P
OUT
= 220 W PEP, ƒ
1
= 2140 MHz,
ƒ
2
= 2141 MHz,
tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
15.8
38.5
–28
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.03
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1.6 A
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 50 W Average WCDMA)
Data Sheet
2 of 11
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
761
4.35
–40 to +150
0.23
Unit
V
V
°C
W
W/°C
°C
°C/W
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTFA212401E V4
PTFA212401F V4
Package Outline
H-36260-2
H-37260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Shipping
Tray
Tray
Typical Performance
(data taken in a production test fixture)
Two-carrier WCDMA at Selected Biases
V
DD
= 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
series show I
DQ
Broadband Performance
V
DD
= 30 V, I
DQ
= 1600 mA, P
OUT
= 50 W
-30
-35
-40
-45
-50
-55
40
-5
Gain (dB), Efficiency (%)
3rd Order IMD (dBc)
2.0 A
1.8 A
30
25
-15
-20
Efficiency
20
15
10
2050
-25
-30
-35
2200
1.4 A
1.6 A
Gain
2080
2110
2140
2170
34
36
38
40
42
44
46
Output Power, PEP (dBm)
Frequency (MHz)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 04, 2009-10-05
Input Return Loss (dB)
2.2 A
35
Return Loss
-10
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz
-20
-25
-30
-35
-40
-45
-50
-55
0
5
10
15
20
25
30
35
40
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 30 V I
DQ
= 1600 mA , ƒ = 2140 MHz,
Intermodulation Distortion (dBc)
P
OUT
= 53 dBm PEP
17
16
65
55
45
35
Gain
Gain (dB)
15
14
13
12
0
40
80
120
160
200
Drain Efficiency (%)
3rd Order
7th
T
CASE
= 25°C
Efficiency T
CASE
= 90°C
25
15
240
5th
Output Power (W)
Tone Spacing (MHz)
Voltage Sweep
I
DQ
= 1600 mA, ƒ = 2140 MHz,
tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
Efficiency
3rd Order IMD (dBc)
-20
40
Intermodulation Distortion Products
vs. Output Power
V
DD
= 30 V, I
DQ
= 1600 mA,
50
-20
-10
ƒ
1
= 2137.5 MHz, ƒ
2
= 2142.5 MHz
Up
Low
Gain (dB), Drain Efficiency (%)
Intermodulation Distortion (dBc)
-30
IM3
-40
IM5
-30
30
IM3 Up
-40
20
-50
Gain
-50
24
26
28
30
32
10
IM7
-60
10
100
1000
Supply Voltage (V)
Output Power, PEP (W)
Data Sheet
4 of 11
Rev. 04, 2009-10-05
PTFA212401E
PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Output Peak-to-Average Ratio Compression
(PARC) at various Power Levels
100
10
Power Gain vs. Power Sweep (CW) over
Temperature
V
DD
= 30 V, I
DQ
= 1500 mA, ƒ = 2140 MHz
18
17
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2170 MHz,
single-carrier WCDMA input PAR = 7.5 dB
-15C
25C
85C
Power Gain (dB)
Probability (%)
1
48 dBm
52 dBm
46 dBm
Input
16
15
14
13
12
0.1
0.01
51 dBm
50 dBm
0.001
1
2
3
4
5
6
7
8
1
10
100
1000
Peak-to-Average (dB)
Output Power (W)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
Intermodulation Distortion (dBc)
-25
-30
-35
-40
-45
-50
-55
-60
-65
44
46
48
50
52
54
50
-25
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing
Efficiency
IM3
-35
-40
-45
-50
-55
34
36
38
40
42
44
46
48
25
20
15
35
30
IM3 (dBc), ACPR (dBc)
Efficiency
IM3
IM5
45
40
35
30
25
20
-30
Drain Efficiency (%)
IM7
ACPR
15
10
10
5
Output Power, PEP (dBm)
Output Power, avg. (dBm)
Data Sheet
5 of 11
Rev. 04, 2009-10-05
Drain Efficiency (%)
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