PTFB212503EL
PTFB212503FL
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
Description
The PTFB212503EL and PTFB212503FL are 240-watt
LDMOS FETs intended for use in multi-standard cellular power
amplifier applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain, wide
signal bandwidth and reduced memory effects for unparalleled
DPD correctability. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFB212503EL
Package H-33288-6
PTFB212503FL
Package H-34288-4/2
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 2170 MHz,
3GPP signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-15
-20
-25
ACPR
IMD Low
IMD Up
Efficiency
40
35
Two-carrier WCDMA Drive-up
Features
• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Wide video bandwidth
• Typical single-carrier WCDMA performance at 2170 MHz,
30 V, I
DQ
= 1.85 A, 3GPP signal, channel bandwidth =
3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF
- Average output power = 49.4 dBm
- Linear gain = 18 dB
- Efficiency = 37%
- Intermodulation distortion = –33 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1
dB
= 240 W
- Efficiency = 54 %
• Increased negative gate-source voltage range for
improved performance in Doherty peaking amplifiers
• Integrated ESD protection: Human Body Model, Class 2
(minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)
output power
• Pb-free, RoHS-compliant
-30
-35
-40
-45
-50
-55
32
34
36
25
20
15
10
5
0
38
40
42
44
46
48
50
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications
(not subject to production test—verified by design/characterization in Infineon test
fixture)
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 55 W average, ƒ
1
= 2160 MHz, ƒ
2
= 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Efficiency (%)
30
IMD (dBc)
Symbol
G
ps
Min
—
—
—
Typ
18.0
31
–33
Max
—
—
—
Unit
dB
%
dBc
h
D
IMD
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 07.1, 2016-06-15
PTFB212503EL
PTFB212503FL
RF Characteristics
(cont.)
Two-tone Specifications
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 200 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17
39
—
Typ
18
40
–30
Max
—
—
–28
Unit
dB
%
dBc
h
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1.85 A
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.05
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 200 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–6 to +10
200
–40 to +150
0.26
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB212503EL V1 R0
PTFB212503EL V1 R250
PTFB212503FL V2 R0
PTFB212503FL V2 R250
Order Code
PTFB212503ELV1R0XTMA1
PTFB212503ELV1R250XTMA1
PTFB212503FLV2R0XTMA1
PTFB212503FLV2R250XTMA1
Package Description
H-33288-6, bolt-down
H-33288-6, bolt-down
H-34288-4/2, earless flange
H-34288-4/2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 14
Rev. 07.1, 2016-06-15
PTFB212503EL
PTFB212503FL
Typical Performance
(data taken in a production test fixture)
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A, 3GPP signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-25
2170 MHz Low
-30
-35
-40
-45
-50
-55
32
34
36
38
40
42
44
46
48
50
2170 MHz Up
2140 MHz Low
2140 MHz Up
2110 MHz Low
2110 MHz Up
19
20
V
DD
= 30 V, I
DQ
= 1.85 A ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
50
40
30
20
Two-carrier WCDMA Drive-up
18
17
16
15
33
35
37
39
41
43
45
47
49
51
Efficiency
10
0
Output Power (dBm)
Output Power (dBm)
CW Power Sweep
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 2170 MHz
Two-tone Broadband Performance
V
DD
= 30 V, I
DQ
= 1.85 A, P
O UT
= 100 W
20
19
18
17
16
15
14
38
40
42
44
46
48
50
52
54
65
60
55
-5
Gain (dB) / Efficiency (%)
55
45
Drain Efficiency (%)
50
45
40
35
30
25
20
15
2070
2090
2110
2130
2150
2170
2190
2210
-15
Gain (dB)
Gain
Efficiency
-20
-25
-30
-35
-40
-45
-50
35
25
IMD 3
Gain
Efficiency
15
5
Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 14
Rev. 07.1, 2016-06-15
Return Loss (dB), IMD (dBc)
RL
-10
Efficiency (%)
IMD (dBc)
Gain (dB)
Gain
PTFB212503EL
PTFB212503FL
Typical Performance
(cont.)
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 2170 MHz
CW Performance
CW Performance
Gain vs. Output Power
V
DD
= 30 V, ƒ = 2170 MHz
21
20
60
19
Drain Efficiency (%)
19
18
17
16
15
35
40
45
50
55
40
Power Gain (dB)
+25°C
+85° C
–10° C
Efficiency
50
18
I
DQ
= 2.11 A
Gain (dB)
Gain
30
20
10
0
I
DQ
= 1.85 A
17
I
DQ
= 1.30 A
16
35
40
45
50
55
Output Power (dBm)
Output Power (dBm)
V
DD
= 30 V, I
DQ
= 1.85 A ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8.5 dB, BW 3.84 MHz
-20
-30
-40
-50
-60
-70
-80
33
35
37
39
41
43
45
47
49
51
Output Power (dBm)
IM3
Efficiency
60
50
40
30
20
10
0
60
Single-carrier WCDMA
Single-carrier WCDMA, 3GGP Broadband
V
DD
= 30 V, I
DQ
= 1.85 A, P
O UT
= 63 W
0
Drain Efficiency (%)
50
45
40
35
30
25
20
15
10
1960
2020
2080
2140
2200
RL
-10
-15
-20
-25
-30
-35
-40
-45
-50
IM3 (dBc)
Efficiency
IM3
Gain
2260
2320
Frequency (MHz)
Data Sheet
5 of 14
Rev. 07.1, 2016-06-15
Return Loss (dB) / IM3 (dBc)
Gain (dB) / Efficiency (%)
55
-5
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