MITSUBISHI SEMICONDUCTORS <HVIC>
M81723FP
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION
M81723FP is high voltage Power MOSFET and IGBT mod-
ule driver for half bridge applications.
PIN CONFIGURATION (TOP VIEW)
FEATURES
¡FLOATING
SUPPLY VOLTAGE ................................. 600V
¡OUTPUT
CURRENT ...................... +130mA/–100mA (typ)
¡UNDERVOLTAGE
LOCKOUT
¡SOP-16
PACKAGE
APPLICATIONS
IGBT/MOSFET driver
LO
V
com
V
CC2
NC
NC
V
S
V
B
HO
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
GND
LIN
NC
HIN
V
CC
NC
NC
NC:NO CONNECTION
Outline:16P2N
BLOCK DIAGRAM
V
CC
11
7
V
B
V
REG
HV
LEVEL
SHIFT
V
REG
/V
CC
LEVEL
SHIFT
P
onr
UV
DETECT
INTER
LOCK
RQ
S
8
HO
HIN
12
PULSE
GEN
6
3
V
S
V
CC2
HV
LEVEL
SHIFT
V
REG
/V
CC
LEVEL
SHIFT
P
onr
UV
DETECT
INTER
LOCK
RQ
S
1
LO
LIN
14
PULSE
GEN
2
V
com
GND
15
Aug. 2009
1
MITSUBISHI SEMICONDUCTORS <HVIC>
M81723FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS
(Ta = 25
°
C unless otherwise specified)
Symbol
V
B
V
S
V
BS
V
HO
V
CC2
V
com
V
CC2com
V
LO
V
CC
V
IN
dV
S
/dt
Pd
K
q
Rth(j-c)
Tj
Topr
Tstg
TL
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Floating Supply Absolute Voltage
Output Standard Voltage
Low Side Floating Supply Voltage
Low Side Output Voltage
Low Side Fixed Supply Voltage
Logic Input Voltage
Allowable Offset Voltage Transient
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
Solder Heat-proof (Reflow)
Test conditions
Ratings
–0.5 ~ 624
V
B
–24 ~ V
B
+0.5
V
BS
= V
B
–V
S
–0.5 ~ 24
V
S
–0.5 ~ V
B
+0.5
–0.5 ~ 624
V
CC2
–24 ~ V
CC2
+0.5
–0.5 ~ 24
V
com
–0.5 ~ V
CC2
+0.5
–0.5 ~ 24
–0.5 ~ V
CC
+0.5
±50
0.11
–8.9
45
–40 ~ 125*
–40 ~ 100
–55 ~ 150
255:10s, max 260
Unit
V
V
V
V
V
V
V
V
V
V
V/ns
W
mW/°C
°C/W
°C
°C
°C
°C
V
CC2com
= V
CC2
–V
com
HIN, LIN
Ta = 25°C, On Board
Ta > 25°C, On Board
Pb Free
* Please adjust the V
S
potential to 500V or less when the junction temperature (T
j
) exceeds 125°C.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
B
V
S
V
BS
V
HO
V
CC2
V
com
V
CC2com
V
LO
V
CC
V
IN
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Floating Supply Absolute Voltage
Output Standard Voltage
Low Side Floating Supply Voltage
Low Side Output Voltage
Low Side Fixed Supply Voltage
Logic Input Voltage
HIN, LIN
Test conditions
Min.
V
S
+10
–5
10
V
S
V
com
+10
–5
10
V
com
10
0
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
V
S
+20
500
20
V
B
V
com
+20
500
20
V
CC2
20
V
CC
Unit
V
V
V
V
V
V
V
V
V
V
V
B
> 10V
V
BS
= V
B
–V
S
V
CC2
> 10V
V
CC2com
= V
CC2
–V
com
* For proper operation, the device should be used within the recommended conditions.
THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING)
2.0
Package Power Dissipation Pd (W)
1.5
1.0
0.5
0
0
25
50
75
100
125
150
Temperature Ta (°C)
Aug. 2009
2
MITSUBISHI SEMICONDUCTORS <HVIC>
M81723FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS
(Ta = 25
°
C, V
CC
= V
CC2com
( = V
CC2
–V
com
) = V
BS
( = V
B
–V
S
) = 15V, V
S
= V
com
= 0V, unless
Limits
Min.
—
—
—
—
—
—
—
—
—
—
—
14.9
—
4.0
—
1.0
—
—
—
7.2
0.1
—
7.2
0.1
—
—
300
80
60
—
—
75
85
15
10
70
85
15
10
—
—
200
Typ.*
—
—
0.20
0.30
0.20
0.25
0.37
0.20
0.20
0.37
0.25
—
—
—
—
1.5
25
75
—
8.4
0.4
7.5
8.4
0.4
7.5
—
—
130
100
55
45
95
115
35
30
95
115
35
30
—
—
220
Max.
1.0
1.0
0.4
0.6
0.4
0.5
0.75
0.4
0.4
0.75
0.5
—
0.1
—
0.6
2.0
75
150
1.0
9.7
0.7
—
9.7
0.7
—
6.0
—
180
140
100
70
120
145
70
80
120
145
70
80
15
15
240
otherwise specified)
Symbol
I
FS
I
Fcom
I
BS
I
CC
I
CC2
I
BSH
I
CCH
I
CC2H
I
BSL
I
CCL
I
CC2L
V
OH
V
OL
V
IH
V
IL
V
INh
I
IH5
I
IH15
I
IL
V
BSuvr
V
BSuvh
t
VBSuv
V
CC2uvr
V
CC2uvh
t
VCC2ur
V
Ponr
t
Ponr(FIL)
I
OH
I
OL
R
OH
R
OL
t
dLH(HO)
t
dHL(HO)
t
rH
t
fH
t
dLH(LO)
t
dHL(LO)
t
rL
t
fL
∆t
dLH
∆t
dHL
VOPW
Parameter
Floating Supply Leakage Current
V
com
Floating Supply Leakage Current
V
BS
Standby Current
V
CC
Standby Current
V
CC2
Standby Current
V
BS
Standby Current H
V
CC
Standby Current H
V
CC2
Standby Current H
V
BS
Standby Current L
V
CC
Standby Current L
V
CC2
Standby Current L
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
Input Hysteresis Voltage
High Level Input Bias Current 5
High Level Input Bias Current 15
Low Level Input Bias Current
V
BS
Supply UV Reset Voltage
V
BS
Supply UV Hysteresis Voltage
V
BS
Supply UV Filter Time
V
CC2
Supply UV Reset Voltage
V
CC2
Supply UV Hysteresis Voltage
V
CC2
Supply UV Filter Time
Power-On Reset Voltage
Power-On Reset Filter Time
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On Resistance
Output Low Level On Resistance
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Turn-Off Fall Time
Low Side Turn-On Propagation Delay
Low Side Turn-Off Propagation Delay
Low Side Turn-On Rise Time
Low Side Turn-Off Fall Time
Delay Matching, High Side and Low Side Turn-On
Delay Matching, High Side and Low Side Turn-Off
Output Pulse Width
Test conditions
V
B
= V
S
= 600V
V
CC2
= V
com
= 600V
HIN = LIN = 0V
HIN = LIN = 0V
HIN = LIN = 0V
HIN = 5V
HIN = 5V
HIN = 5V
LIN = 5V
LIN = 5V
LIN = 5V
I
O
= 0A, LO, HO
I
O
= 0A, LO, HO
HIN, LIN
HIN, LIN
V
INh
= V
IH
–V
IL
V
IN
= 5V
V
IN
= 15V
V
IN
= 0V
Unit
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
µA
µA
µA
V
V
µs
V
V
µs
V
ns
mA
mA
Ω
Ω
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
O
= 0V, V
IN
= 5V, PW < 10µs
V
O
= 15V, V
IN
= 0V, PW < 10µs
I
O
= –20mA, R
OH
= (V
OH
–V
O
)/I
O
I
O
= 20mA, R
OL
= V
O
/I
O
CL = 200pF between HO-V
S
CL = 200pF between HO-V
S
CL = 200pF between HO-V
S
CL = 200pF between HO-V
S
CL = 200pF between LO-V
com
CL = 200pF between LO-V
com
CL = 200pF between LO-V
com
CL = 200pF between LO-V
com
|t
dLH(HO)
–t
dLH(LO)
|
|t
dHL(HO)
–t
dHL(LO)
|
V
IN
: PW = 200ns
* Typ. is not specified.
Aug. 2009
3
MITSUBISHI SEMICONDUCTORS <HVIC>
M81723FP
HIGH VOLTAGE HALF BRIDGE DRIVER
FUNCTION TABLE
HIN
H→L
H→L
L→H
L→H
X
X
H→L
L→H
LIN
H→L
L→H
H→L
L→H
H→L
L→H
X
X
V
BS
UV
H
H
H
H
L
L
H
H
V
CC2com
UV
H
H
H
H
H
H
L
L
HO
L
L
H
H
L
L
L
H
LO
L
H
L
H
L
H
L
L
LO = HO = Low
LO = High
HO = High
LO = HO = High
HO = Low, V
BS
UV tripped
LO = High, V
BS
UV tripped
LO = Low, V
CC2com
UV tripped
HO = High, V
CC2com
UV tripped
Behavioral state
Note1 : “L” state of V
BS
UV, V
CC
UV means that UV trip voltage.
2 : In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “H”.
3 : X : L→H or H→L.
4 : Output signal (HO, LO) is triggered by the edge of input signal.
HIN(LIN)
HO(LO)
TIMING DIAGRAM
1. Input/Output Timing Diagram
HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.)
In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “H”.
HIN
LIN
HO
LO
2. V
CC2com
(V
BS
) Supply Under Voltage Lockout Timing Diagram
If supply voltage drops below UV trip voltage(½½½
uvt
=
½½½
uvr
–½½½
uvh
) for supply UV filter time, output signal becomes
“L”. As soon as supply voltage is higher than UV reset voltage, output becomes normal.
V
CC2com
(V
BS
)
V
CC2comuvt
(V
BSuvt
)
t
VCC2comuv
(t
VBSuv
)
V
CC2comuvh
(V
BSuvh
)
V
CC2comuvr
(V
BSuvr
)
LO (HO)
LIN (HIN)
Aug. 2009
4
MITSUBISHI SEMICONDUCTORS <HVIC>
M81723FP
HIGH VOLTAGE HALF BRIDGE DRIVER
3. Allowable Supply Voltage Transient
It is recommended to supply V
CC
firstly and supply V
CC2com
secondly and supply V
BS
at last. In the case of shutting off
supply voltage, please shut off V
BS
supply voltage firstly. Secondly, shut off V
CC2com
Supply Voltage. And at last, shut-
ting off V
CC
supply voltage.
When applying V
CC2com
and V
BS
, power supply should be applied slowly. If it rises rapidly, output signal (HO or LO)
may be malfunction.
PACKAGE OUTLINE
16P2N-A
MMP
JEDEC Code
P
Weight(g)
0.2
Lead Material
Cu Alloy
Plastic 16pin 300mil SOP
e
b
2
EIAJ Package Code
SOP16-P-300-1.27
16
9
H
E
E
e
1
Recommended Mount Pad
Symbol
1
8
F
A
G
D
A
2
b
A
1
x
M
e
y
A
A
1
A
2
b
c
D
E
e
H
E
L
L
1
z
Z
1
x
y
b
2
e
1
I
2
c
z
Z
1
Detail G
Detail F
Dimension in Millimeters
Min
Nom
Max
–
–
2.1
0.2
0.1
0
P
P
1.8
0.5
0.4
0.35
0.25
0.2
0.18
10.2
10.1
10.0
5.4
5.3
5.2
P
1.27
P
8.1
7.8
7.5
0.8
0.6
0.4
P
1.25
P
P
P
0.605
P
0.755
P
P
P
0.25
0.1
P
P
0°
P
8°
P
0.76
P
P
7.62
P
P
1.27
P
L
1
L
I
2
Aug. 2009
5
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