MITSUBISHI SEMICONDUCTORS <HVIC>
M81706AFP
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION
M81706AFP is high voltage Power MOSFET and IGBT
module driver for half bridge applications.
PIN CONFIGURATION (TOP VIEW)
FEATURES
¡FLOATING
SUPPLY VOLTAGE ................................. 600V
¡OUTPUT
CURRENT ..................... +120mA/–250mA (min)
¡HALF
BRIDGE DRIVER
¡UNDERVOLTAGE
LOCKOUT
¡SOP-8
PACKAGE
APPLICATIONS
MOSFET and IGBT module inverter driver for PDP, HID
lamp, refrigerator, air-conditioner, washing machine, AC-
servomotor and general purpose.
1. V
CC
2. HIN
3. LIN
4. GND
8. V
B
7. HO
6. V
S
5. LO
Outline:8P2S
BLOCK DIAGRAM
8
V
B
V
REG
HV
LEVEL
SHIFT
UV DETECT
FILTER
RQ
INTER
LOCK
R
S
7
HIN
2
V
REG
/V
CC
LEVEL
SHIFT
HO
PULSE
GEN
6
V
S
V
CC
UV DETECT
FILTER
V
REG
/V
CC
LEVEL
SHIFT
1
LIN
3
DELAY
5
LO
4
GND
Aug. 2009
1
MITSUBISHI SEMICONDUCTORS <HVIC>
M81706AFP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS
(Ta = 25
°
C unless otherwise specified)
Symbol
V
B
V
S
V
BS
V
HO
V
CC
V
LO
V
IN
Pd
K
q
Rth(j-c)
Tj
Topr
Tstg
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
Test conditions
Ratings
–0.5 ~ 625
V
B
–25 ~ V
B
+0.5
V
BS
= V
B
–V
S
–0.5 ~ 25
V
S
–0.5 ~ V
B
+0.5
–0.5 ~ 25
–0.5 ~ V
CC
+0.5
–0.5 ~ V
CC
+0.5
0.6
6.0
50
–20 ~ 125
–20 ~ 100
–40 ~ 125
Unit
V
V
V
V
V
V
V
W
mW/°C
°C/W
°C
°C
°C
HIN, LIN
Ta = 25°C, On Board
Ta > 25°C, On Board
RECOMMENDED OPERATING CONDITIONS
Symbol
V
B
V
S
V
BS
V
HO
V
CC
V
LO
V
IN
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
Test conditions
Min.
V
S
+10
0
10
V
S
10
0
HIN, LIN
0
Limits
Typ.
—
—
—
—
—
—
—
Max.
V
S
+20
500
20
V
B
20
V
CC
V
CC
Unit
V
V
V
V
V
V
V
V
BS
= V
B
–V
S
* For proper operation, the device should be used within the recommended conditions.
THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING)
0.7
Package Power Dissipation Pd (W)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
25
50
75
100
125
150
Temperature Ta (°C)
Aug. 2009
2
MITSUBISHI SEMICONDUCTORS <HVIC>
M81706AFP
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS
(Ta = 25
°
C, V
CC
= V
BS
( = V
B
–V
S
) = 15V, unless otherwise specified)
Symbol
I
FS
I
BS
I
CC
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
V
BSuvr
V
BSuvt
V
BSuvh
t
VBSuv
V
CCuvr
V
CCuvt
V
CCuvh
t
VCCuv
I
OH
I
OL
R
OH
R
OL
t
dLH(HO)
t
dHL(HO)
t
rH
t
fH
t
dLH(LO)
t
dHL(LO)
t
rL
t
fL
∆t
dLH
∆t
dHL
Parameter
Floating Supply Leakage Current
V
BS
Standby Current
V
CC
Standby Current
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
High Level Input Bias Current
Low Level Input Bias Current
V
BS
Supply UV Reset Voltage
V
BS
Supply UV Trip Voltage
V
BS
Supply UV Hysteresis Voltage
V
BS
Supply UV Filter Time
V
CC
Supply UV Reset Voltage
V
CC
Supply UV Trip Voltage
V
CC
Supply UV Hysteresis Voltage
V
CC
Supply UV Filter Time
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On Resistance
Output Low Level On Resistance
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Turn-Off Fall Time
Low Side Turn-On Propagation Delay
Low Side Turn-Off Propagation Delay
Low Side Turn-On Rise Time
Low Side Turn-Off Fall Time
Delay Matching, High Side and Low Side Turn-On
Delay Matching, High Side and Low Side Turn-Off
V
O
= 0V, V
IN
= 5V, PW < 10µs
V
O
= 15V, V
IN
= 0V, PW < 10µs
I
O
= –20mA, R
OH
= (V
OH
–V
O
)/I
O
I
O
= 20mA, R
OL
= V
O
/I
O
CL = 1000pF between HO-V
S
CL = 1000pF between HO-V
S
CL = 1000pF between HO-V
S
CL = 1000pF between HO-V
S
CL = 1000pF between LO-GND
CL = 1000pF between LO-GND
CL = 1000pF between LO-GND
CL = 1000pF between LO-GND
|t
dLH(HO)
–t
dLH(LO)
|
|t
dHL(HO)
–t
dHL(LO)
|
Test conditions
V
B
= V
S
= 600V
HIN = LIN = 0V
HIN = LIN = 0V
I
O
= –20mA, LO, HO
I
O
= 20mA, LO, HO
HIN, LIN
HIN, LIN
V
IN
= 5V
V
IN
= 0V
Min.
—
—
0.2
13.6
—
2.7
—
—
—
8.0
7.4
0.5
—
8.0
7.4
0.5
—
120
250
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.*
—
0.2
0.5
14.2
0.3
—
—
5
—
8.9
8.2
0.7
7.5
8.9
8.2
0.7
7.5
200
350
40
15
120
170
130
50
120
170
130
50
0
0
Max.
1.0
0.5
1.0
—
0.6
—
0.8
20
2
9.8
9.0
—
—
9.8
9.0
—
—
—
—
70
30
240
280
220
80
240
280
220
80
30
30
Unit
µA
mA
mA
V
V
V
V
µA
µA
V
V
V
µs
V
V
V
µs
mA
mA
Ω
Ω
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
* Typ. is not specified.
Aug. 2009
3
MITSUBISHI SEMICONDUCTORS <HVIC>
M81706AFP
HIGH VOLTAGE HALF BRIDGE DRIVER
FUNCTION TABLE
HIN
H→L
H→L
L→H
L→H
X
X
H→L
L→H
LIN
L
H
L
H
L
H
X
X
V
BS
UV
H
H
H
H
L
L
H
H
V
CC
UV
H
H
H
H
H
H
L
L
HO
L
L
H
L
L
L
L
L
LO
L
H
L
L
L
H
L
L
LO = HO = Low
LO = High
HO = High
LO = HO = Low
HO = Low, V
BS
UV tripped
LO = High, V
BS
UV tripped
LO = Low, V
CC
UV tripped
HO = LO = Low, V
CC
UV tripped
Behavioral state
Note1 : “L” state of V
BS
UV, V
CC
UV means that UV trip voltage.
2 : In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”.
3 : X(HIN) : L→H or H→L.X(LIN) : H or L.
4 : Output signal (HO) is triggered by the edge of input signal.
HIN
HO
TIMING DIAGRAM
1. Input/Output Timing Diagram
HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.)
In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”.
HIN
LIN
HO
LO
Aug. 2009
4
MITSUBISHI SEMICONDUCTORS <HVIC>
M81706AFP
HIGH VOLTAGE HALF BRIDGE DRIVER
2. V
CC
(V
BS
) Supply Under Voltage Lockout Timing Diagram
If V
CC
supply voltage drops below UV trip voltage (V
CCuvt
= V
CCuvr
–V
CCuvh
) for V
CC
supply UV filter time, output signal
becomes “L”. As soon as V
CC
supply voltage rises over UV reset voltage, output signal LO becomes “H”.
V
CC
V
CCuvt
t
VCCuv
V
CCuvh
V
CCuvr
LO
LIN
It V
CC
supply voltage drops below UV trip voltage (V
CCuvt
= V
CCuvr
–V
CCuvh
) for V
CC
supply UV filter time, output signal
becomes “L”. As soon as V
CC
supply voltage rises over UV reset voltage, output signal HO becomes “H” it input signal
is “H”.
V
BS(H)
LIN
(L)
V
CC
V
CCuvt
t
VCCuv
V
CCuvh
V
CCuvr
HO
HIN
If V
BS
supply voltage drops below UV trip voltage (V
BSuvt
= V
BSuvr
–V
BSuvh
) for V
BS
supply UV filter time, output signal
becomes “L”. As soon as V
BS
supply voltage rises over UV reset voltage, output signal HO becomes “H” at following
“H” edge of input signal.
V
BSuvh
V
BSuvt
t
VBSuv
V
BSuvr
V
BS
HO
HIN
Aug. 2009
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
