ASMT-QxB2-Fxxxx
Super 0.5 W Power PLCC-4 Surface Mount LED Indicator
Data Sheet
Description
The Super 0.5 W Power PLCC-4 SMT LED is an extension
of Power PLCC-4 SMT LEDs. The package can be driven
at high current due to its superior package design. The
product is able to dissipate the heat more efficiently
compared to the Power PLCC-4 SMT LEDs. These LEDs
produce higher light output with better flux perfor-
mance compared to the Power PLCC-4 SMT LED.
The Super 0.5 W Power PLCC-4 SMT LEDs are designed
for higher reliability, better performance, and operate
under a wide range of environmental conditions. The
performance characteristics of these new mid-power
LEDs make them uniquely suitable for use in harsh
conditions such as in automotive applications, and in
electronics signs and signals.
To facilitate easy pick and place assembly, the LEDs are
packed in EIA-compliant tape and reel. Every reel is
shipped in single intensity and color bin (except for red),
to provide close uniformity.
Super 0.5 W Power PLCC-4 SMT LED is available in red,
red orange and amber colors.
Features
•
Industry Standard PLCC 4 platform (3.2 x 2.8 x 1.9
mm)
•
High reliability package with enhanced silicone resin
encapsulation
•
High intensity brightness with optimum flux
performance using AllnGaP chip technologies
•
Available in Red, Red Orange and Amber colors
•
High optical efficiency
•
Available in 8 mm carrier tape and 7 inch reel
•
Low thermal resistance
•
Super wide viewing angle at 120 degrees
•
Longer life time with minimum degradation due to
enhanced Silicone resin material
•
JEDEC MSL 2a
Applications
•
Exterior automotive
- Turn signals
- Side repeaters
- CHSML
- Rear combination lamp
- Side markers
- Truck clearance lamp
•
Electronic signs and signals
- Channel lettering
- Contour lighting
- Indoor variable message sign
•
Office automation, home appliances, industrial
equipment
- Front panel backlighting
- Push button backlighting
- Display backlighting
CAUTION:
ASMT-QxB2-Fxxxx LEDs are Class 2 ESD sensitive. Please observe appropriate precautions
during handling and processing. Refer to Avago Application Note AN-1142 for additional details.
Package Drawing
2.8 0.2
0.8 0.1
2.2 0.2
C
C
2.40
0.15 (TYP.)
1.15 0.05
1.9 0.2
3.2 0.2
3.6 0.2
0.41 (TYP.)
0.56 (TYP.)
0.8 0.3
A
ANODE
MARKING
NOTES: 1.
2.
3.
4.
A
0.7 0.1
0.5 0.1
2.30 0.05
ALL DIMENSIONS IN MILLIMETERS.
LEAD POLARITY AS SHOWN IN FIGURE 13.
TERMINAL FINISH: Ag PLATING.
ENCAPSULATION MATERIAL: SILICONE RESIN.
Figure 1. Package drawing
Table 1. Device Selection Guide (T
J
= 25 °C)
Luminous Flux,
Φ
V[1]
(lm)
Color
Amber
Red Orange
Red
Part Number
ASMT-QAB2-FDE0E
ASMT-QHB2-FEF0E
ASMT-QRB2-FCD0E
Min. Flux
(lm)
9.0
11.5
7.0
Typ. Flux
(lm)
11.4
14.0
9.8
Max. Flux
(lm)
15.0
19.5
11.5
Test Current
(mA)
150
150
150
Dice Technology
AlInGaP
AlInGaP
AlInGaP
Notes:
1.
Φ
V
is the total luminous flux output as measured with an integrating sphere at mono pulse conditions.
2. Tolerance = ±12%.
Part Numbering System
A S M T – Q X
1
B 2 – F X
2
X
3
X
4
X
5
Packaging Option
Color Bin Selection
Max. Flux Bin Selection
Min. Flux Bin Selection
Color
A - Amber
H - Red Orange
R - Red
2
Table 2. Absolute Maximum Ratings (T
A
= 25°C)
Parameters
DC Forward Current
[1]
Peak Forward Current
[2]
Power Dissipation
Reverse Voltage
Junction Temperature
Operating Temperature
Storage Temperature
Notes:
1. Derate l inearly as shown in Figure 6.
2. Duty Factor = 10%, Frequency = 1kHz.
ASMT-QxB2-Fxxxx
150 mA
200 mA
470 mW
5V
125°C
-40°C to +110°C
-40°C to +110°C
Table 3. Optical Characteristics (T
J
= 25°C)
Dominant
Wavelength
λ
D[1]
(nm)
Typ.
594.5
617.0
624.0
Color
Amber
Red Orange
Red
Part Number
ASMT-QAB2-Fxxxx
ASMT-QHB2-Fxxxx
ASMT-QRB2-Fxxxx
Dice
Technology
AlInGaP
AlInGaP
AlInGaP
Viewing
Angle 2θ
1
/
2[2]
(Degrees)
Typ.
120
120
120
Luminous
Efficiency
η
e
(lm/W)
Typ.
28
35
21
Total Flux /
Luminous Intensity
F
V
(lm) / I
V
(cd)
Typ.
3.3
3.3
3.3
Notes:
1. The dominant wavelength,
λ
D
, is derived from the CIE Chromaticity diagram and represents the color of the device.
2.
θ
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity.
Table 4. Electrical Characteristics (T
J
= 25°C)
Forward Voltage V
F
(Volts) @ I
F
= 150 mA
Part Number
ASMT-QAB2-Fxxxx
ASMT-QHB2-Fxxxx
ASMT-QRB2-Fxxxx
Reverse Voltage
V
R
@ 100 μA
Min.
5
5
5
Thermal Resistance
Rθ
J-P
(°C/W)
60
60
60
Typ.
2.70
2.70
3.10
Max.
3.25
3.25
3.55
3
1.0
0.9
0.8
RELATIVE INTENSITY
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
380
430
480
580
530
630
WAVELENGTH – nm
AlInGaP AMBER
AlInGaP
RED-ORANGE
FORWARD CURRENT – mA
AlInGaP RED
200
180
160
140
120
100
80
60
40
20
0
AlInGaP
RED-ORANGE
0
1
AlInGaP AMBER
AlInGaP RED
680
730
780
2
FORWARD VOLTAGE – V
3
4
Figure 2. Relative intensity vs. wavelength
Figure 3. Forward current vs. forward voltage
1.2
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 150 mA)
AMBER
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 25 C)
1.0
0.8
0.6
0.4
0.2
0
0
50
100
DC FORWARD CURRENT – mA
150
200
RED/RED-ORANGE
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-50
-25
AMBER
RED-ORANGE
RED
0
25
50
75
JUNCTION TEMPERATURE – C
100
125
Figure 4. Relative intensity vs. forward current
Figure 5. Relative intensity vs. temperature
160
MAXIMUM FORWARD CURRENT – mA
140
120
100
80
60
40
20
0
0
20
40
60
80
JUNCTION TEMPERATURE – °C
R
JA
= 100 °C/W
R
JA
= 110 °C/W
R
JA
= 130 °C/W
R
JA
=
80 °C/W
160
140
120
CURRENT – mA
100
80
60
40
20
AMBER / RED-ORANGE
RED
100
120
0
0
20
40
60
80
TEMPERATURE – °C
100
120
Figure 6a. Maximum forward current vs. ambient temperature. Derated
based on T
JMAX
= 125°C, Rθ
J-A
= 130°C/W, 110°C/W, 100°C/W and 80°C/W.
Figure 6b. Maximum forward current vs. solder point temperature.
Derated based on T
JMAX
= 125°C, R
JP
= 60°C/W.
4
0.30
D=
0.05
0.10
0.25
0.50
1
0.30
D=
0.20
CURRENT - A
t
p
T
t
p
T
D=
0.05
0.10
0.25
0.50
1
I
F
CURRENT - A
0.20
0.10
D=
0.00
1.00E-05
1.00E-03
t
p
T
t
p
T
I
F
0.10
1.00E-01
t
p
- Time - (S)
1.00E+01
0.00
1.00E-05
1.00E-03
1.00E-01
t
p
- Time - (S)
1.00E+01
Figure 7a. Maximum pulse current vs. ambient temperature. Derated
based on T
A
= 25°C, Rθ
J-A
=110°C/W.
Figure 7b. Maximum pulse current vs. ambient temperature.Derated vased
on T
A
= 85°C, Rθ
J-P
=110°C/W.
630
AlInGaP RED
DOMINANT WAVELENGTH – nm
AlInGaP RED-ORANGE
FORWARD VOLTAGE SHIFT (V)
620
610
600
AlInGaP AMBER
590
580
0.15
0.10
0.05
0
-0.05
-0.10
-0.15
-50
-25
0
25
50
T
J
– JUNCTION TEMPERATURE – C
75
100
0
50
100
FORWARD CURRENT – mA
150
200
Figure 8. Dominant wavelength vs. forward current – AlInGaP devices
Figure 9. Forward voltage shift vs. temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-90
NORMALIZED INTENSITY
-60
-30
0
30
ANGULAR DISPLACEMENT – DEGREES
60
90
Figure 10. Radiation pattern
5
Microchip MCU
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