Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Philips Semiconductors (NXP Semiconductors N.V.) |
包装说明 | , |
Reach Compliance Code | unknown |
配置 | Single |
最大漏极电流 (Abs) (ID) | 0.05 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码 | e0 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 125 °C |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 0.275 W |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
BSD215 | BSD213 | BSD214 | BSD212 | |
---|---|---|---|---|
描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | Philips Semiconductors (NXP Semiconductors N.V.) | Philips Semiconductors (NXP Semiconductors N.V.) | Philips Semiconductors (NXP Semiconductors N.V.) | Philips Semiconductors (NXP Semiconductors N.V.) |
Reach Compliance Code | unknown | unknown | unknown | unknown |
配置 | Single | Single | Single | Single |
最大漏极电流 (Abs) (ID) | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码 | e0 | e0 | e0 | e0 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 0.275 W | 0.275 W | 0.275 W | 0.275 W |
表面贴装 | NO | NO | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
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