SKiiP 13ACM12V15
Absolute Maximum Ratings
Symbol
MOS-Chip
V
DS
I
D
I
DM
V
GS
T
j
= 150 °C
T
s
= 25 °C
T
s
= 70 °C
1200
22
18
60
-10 ... 25
-55 ... 150
V
A
A
A
V
°C
A
A
Conditions
Values
Unit
MiniSKiiP 1
®
T
j
Integrated MOS-diode
I
F
= - I
S
I
FM
= - I
SM
Absolute Maximum Ratings
SKiiP 13ACM12V15
Target Data
Features
• SiC MOSFETs
• SiC Diodes
• Highly reliable spring contacts for
electrical connections
Symbol
Diode 1
V
RRM
I
F
I
Fnom
I
FRM
I
FSM
T
j
Conditions
T
j
= 25 °C
T
j
= 175 °C
T
s
= 25 °C
T
s
= 70 °C
Values
1200
15
13
10
50
-40 ... 175
Unit
V
A
A
A
A
A
°C
T
S
=25°C, t
P
=8.3ms, Half Sine Wave
10 ms, sin 180°,
Typical Applications*
•
•
•
•
High frequency inverters
Power supplies
High efficiency inverters
Solar inverters
Absolute Maximum Ratings
Symbol
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50 Hz, t = 1 min
T
terminal
= 80 °C, 20 A per spring
20
-40 ... 125
2500
A
°C
V
Remarks
• Case temp. limited to T
c
=125°C max.
(for baseplateless modules T
c
= T
s
)
• Recommended T
op
= -40 … +150°C for
Inverse Diode, T
op
= -40 … +125°C for
MOSFET
Conditions
Values
Unit
Characteristics
Symbol
Diode 1
V
F
= V
EC
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-s)
per Diode
1.37
Conditions
I
F
= 5 A
V
GE
= 0 V
chiplevel
chiplevel
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
min.
typ.
1.6
2.1
1
0.8
130
260
max.
1.8
2.6
1.1
1.1
150
310
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
ACM
© by SEMIKRON
Rev. 0 – 02.06.2014
1
SKiiP 13ACM12V15
Characteristics
Symbol
MOS-Chip
V
(BR)DSS
V
GS(th)
I
DSS
V
GS
= 0 V, I
D
= 0.1 mA
V
DS
= 10 V
I
D
= 1 mA
V
GS
= 0 V
V
DS
= 1200
V
GS
= 20 V
I
D
= 20 A
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
1200
1.7
1.2
2.2
1.7
1
10
80
150
950
80
6.5
4.6
49.2
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
73
105
44
39
0.91
0.3
1.25
, V
GS
= 0 V
100
250
250
98
208
V
V
V
µA
µA
nA
mΩ
mΩ
pF
pF
pF
Ω
nC
ns
ns
ns
ns
mJ
mJ
K/W
V
µs
µC
A
Conditions
min.
typ.
max.
Unit
MiniSKiiP 1
®
I
GSS
R
DS(on)
C
iss
C
oss
C
rss
V
DS
= 0 V, V
GS
= 20 V
V
GS
= 0 V, V
DS
= 1000 V, f = 1 MHz
V
GS
= 0 V, V
DS
= 1000 V, f = 1 MHz
V
GS
= 0 V, V
DS
= 1000 V, f = 1 MHz
T
j
= 25 °C
V
GS
= 0 ... 20V
V
DD
= 600 V
V
GS
= 20 V
I
D
= 20 A
R
G
= 10
Ω
di/dt
off
= 780 A/µs
di/dt
on
= 860 A/µs
SKiiP 13ACM12V15
Target Data
Features
• SiC MOSFETs
• SiC Diodes
• Highly reliable spring contacts for
electrical connections
R
Gint
Q
G
t
d(on)
t
d(off)
t
r
t
f
E
on
E
off
R
th(j-s)
Typical Applications*
•
•
•
•
High frequency inverters
Power supplies
High efficiency inverters
Solar inverters
Integrated MOS-diode
V
SD
t
rr
Q
rr
Irr
Remarks
• Case temp. limited to T
c
=125°C max.
(for baseplateless modules T
c
= T
s
)
• Recommended T
op
= -40 … +150°C for
Inverse Diode, T
op
= -40 … +125°C for
MOSFET
Characteristics
Symbol
Module
M
s
w
to heat sink
weight
2
30
2.5
Nm
g
Conditions
min.
typ.
max.
Unit
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1,
Chapter IX
* The specifications of our components may not be considered as an assurance of component
characteristics. Components have to be tested for the respective application. Adjustments may
be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly
recommend prior consultation of our staff.
ACM
2
Rev. 0 – 02.06.2014
© by SEMIKRON
DSP 与 ARM 处理器
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