TRANSISTOR 45 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 80 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V |
| 最大漏极电流 (ID) | 45 A |
| 最大漏源导通电阻 | 0.024 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 180 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| 934045260118 | BUK7624-55T/R | BUK7624-55 | BUK7624-55/T3 | |
|---|---|---|---|---|
| 描述 | TRANSISTOR 45 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power | TRANSISTOR 45 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3, FET General Purpose Power | TRANSISTOR 45 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3, FET General Purpose Power | TRANSISTOR 45 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3, FET General Purpose Power |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | PLASTIC PACKAGE-3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | not_compliant | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 80 mJ | 80 mJ | 80 mJ | 80 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V | 55 V | 55 V | 55 V |
| 最大漏极电流 (ID) | 45 A | 45 A | 45 A | 45 A |
| 最大漏源导通电阻 | 0.024 Ω | 0.024 Ω | 0.024 Ω | 0.024 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 180 A | 180 A | 180 A | 180 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | - |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 最大反馈电容 (Crss) | - | 180 pF | 180 pF | 180 pF |
| 最高工作温度 | - | 175 °C | 175 °C | 175 °C |
| 功耗环境最大值 | - | 103 W | 103 W | 103 W |
| 最大关闭时间（toff） | - | 60 ns | 60 ns | 60 ns |
| 最大开启时间（吨） | - | 53 ns | 53 ns | 53 ns |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
