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70T631S10BC

产品描述CABGA-256, Tray
产品类别存储    存储   
文件大小499KB,共28页
制造商IDT (Integrated Device Technology)
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70T631S10BC概述

CABGA-256, Tray

70T631S10BC规格参数

参数名称属性值
Brand NameIntegrated Device Technology
是否无铅含铅
是否Rohs认证不符合
零件包装代码CABGA
包装说明LBGA, BGA256,16X16,40
针数256
制造商包装代码BC256
Reach Compliance Codenot_compliant
ECCN代码3A991
最长访问时间10 ns
I/O 类型COMMON
JESD-30 代码S-PBGA-B256
JESD-609代码e0
长度17 mm
内存密度4718592 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
湿度敏感等级3
功能数量1
端口数量2
端子数量256
字数262144 words
字数代码256000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX18
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA256,16X16,40
封装形状SQUARE
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)225
电源2.5,2.5/3.3 V
认证状态Not Qualified
座面最大高度1.5 mm
最大待机电流0.01 A
最小待机电流2.4 V
最大压摆率0.405 mA
最大供电电压 (Vsup)2.6 V
最小供电电压 (Vsup)2.4 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn63Pb37)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度17 mm
Base Number Matches1

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HIGH-SPEED 2.5V
512/256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
70T633/1S
Features
Functional Block Diagram
UB
L
LB
L
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 10/12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T633/1 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full hardware support of semaphore signaling between
ports on-chip
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Supports JTAG features compliant to IEEE 1149.1 in
BGA-208 and BGA-256 packages
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 256-ball Ball Grid Array and 208-ball fine pitch
Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
UB
R
LB
R
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0L
CE
1L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
512/256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
18L
(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
18R
(1)
A
0R
TDI
OE
L
CE
0L
CE
1L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0R
CE
1R
TDO
JTAG
TCK
TMS
TRST
R/W
L
R/W
R
BUSY
L(2,3)
SEM
L
INT
L(3)
(4)
(4)
ZZ
L
ZZ
R
NOTES:
CONTROL
LOGIC
1. Address A
18
x is a NC for IDT70T631.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the
sleep mode pins themselves (ZZx) are not affected during sleep mode.
BUSY
R(2,3)
M/S
SEM
R
INT
R(3)
ZZ
5670 drw 01
AUGUST 2019
DSC-5670/11
1
©2019 Integrated Device Technology, Inc.

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