20 Megabit (512K x 40-Bit)
EEPROM MCM
79C2040B
Logic Diagram
Memory
F
EATURES
:
512k x 40-bit EEPROM MCM
• R
AD
-P
AK
® radiation-hardened against natural
• space radiation
• Total dose hardness:
- >100 krad (Si)
- Dependent upon orbit
• Excellent Single event effects @ 25
°
C
- SEL
TH
> 120 MeV cm
2
/mg (Device)
- SEU
TH
> 90 MeV cm
2
/mg(Memory Cells)
- SEU
TH
> 18 MeV cm
2
/mg (Write Mode)
- SET
TH
> 40 MeV cm
2
/mg (Read Mode)
• High endurance
- 10,000 cycles/byte (Page Programming Mode)
- 10 year data retention
• Page Write Mode: 128 Dword Page
• High Speed:
- 150 and 200 ns maximum access times
• Automatic programming
- 10 ms automatic Page/Dword write
• Low power dissipation
- 375 mW/MHz active current
- 3. 2 mW standby current
D
ESCRIPTION
:
Maxwell Technologies’ 79C2040B multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, dependent upon orbit. Using Maxwell Technologies’ pat-
ented radiation-hardened R
AD
-P
AK
® MCM packaging
technology, the 79C2040B is the first radiation-hardened 20
megabit MCM EEPROM for space application. The 79C2040B
uses twenty 1 Megabit high speed CMOS die to yield a 20
megabit product. The 79C2040B is capable of in-system elec-
trical byte and page programmability. It has a 128 word page
programming function to make the erase and write operations
faster. It also features Data Polling and a Ready/Busy signal to
indicate the completion of erase and programming operations.
In the 79C2040B, hardware data protection is provided with
the RES pin, in addition to noise protection on the WE signal
and write inhibit on power on and off. Software data protection
is implemented using the JEDEC optional standard algorithm.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies’ self-defined Class
K
09.15.15 Rev 4
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2015 Maxwell Technologies
All rights reserved.
20 Megabit (512 x 40-Bit) EEPROM MCM
T
ABLE
1. 79C2040B A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Supply Voltage
Input Voltage
Package Weight
Operating Temperature Range
Storage Temperature Range
1. V
IN
min = -3.0V for pulse width <50ns.
S
YMBOL
V
CC
V
IN
RSF
T
OPR
T
STG
-55
-65
M
IN
-0.6
-0.5
1
35
T
YP
79C2040B
M
AX
7.0
7.0
125
150
U
NIT
V
V
Grams
°
C
°
C
T
ABLE
2. 79C2040B R
ECOMMENDED
DC O
PERATING
C
ONDITIONS
P
ARAMETER
Supply Voltage
Input Voltage
RES_PIN
Operating Temperature Range
1. V
IL
min = -1.0V for pulse width < 50 ns
S
YMBOL
V
CC
V
IL
V
IH
V
H
T
OPR
M
IN
4.5
-0.3
1
2.2
V
CC
-0.5
-55
M
AX
5.5
0.8
V
CC
+0.3
V
CC
+1
125
U
NIT
V
V
V
V
°
C
Memory
T
ABLE
3. 79C2040B D
ELTA
L
IMITS1
P
ARAMETER
I
CC1A
I
CC1D
I
CC2A
I
LI
- ADDR, CE, OE, WE
V
ARIATION2
+/- 10 %
+/- 10 %
+/- 10 %
+/- 10 %
I
LI
- D0-D39
+/- 10 %
1. Parameters are measured and recorded per MIL-STD-883 for Class K devices
2. Specified value in Table 5
T
ABLE
4. 79C2040B C
APACITANCE
(T
A
= 25
°
C, f = 1 MHz)
P
ARAMETER
Input Capacitance : V
IN
= 0V
1
S
YMBOL
C
IN
OE
C
IN
WE
C
IN
CE
0-30
C
IN
A0-A16
C
IN
RES
09.15.15 Rev 4
M
IN
M
AX
6
6
30
6
120
U
NIT
pF
All data sheets are subject to change without notice
3
©2015 Maxwell Technologies
All rights reserved
20 Megabit (512 x 40-Bit) EEPROM MCM
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Chip Enable Access Time OE = V
IL
, WE = V
IH
-150
-200
Output Enable Access TIme CE = V
IL
, WE = V
IH
-150
-200
Output Hold to Address Change CE = OE =V
IL
, WE = V
IH
-150
-200
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-150
-200
CE = OE = V
IL
, WE = V
IH
-150
-200
RES to Output Delay CE = OE = V
IL
, WE = V
IH3
-150
-200
S
YMBOL
t
CE
S
UBGROUPS
9, 10, 11
--
--
9, 10, 11
0
0
9, 10, 11
0
0
9, 10, 11
t
DF
t
DFR
M
IN
79C2040B
M
AX
150
200
ns
75
100
ns
--
--
ns
0
0
0
0
9, 10, 11
0
0
450
650
50
60
ns
350
450
ns
U
NIT
ns
T
ABLE
6. 79C2040B AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATION 1
t
OE
t
OH
Memory
t
RR
1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including
scope and fixture); reference levels for measuring timing = 0.8 V/1.8 V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
T
ABLE
7. 79C2040B AC E
LECTRICAL
C
HARACTERISTICS FOR
W
RITE
O
PERATION
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Address Setup Time
-150
-200
Chip Enable to Write Setup Time (WE controlled)
-150
-200
Write Pulse Width
CE controlled
-150
-200
WE controlled
-150
-200
S
YMBOL
t
AS
S
UBGROUPS
9, 10, 11
0
0
9, 10, 11
0
0
9, 10, 11
t
CW
t
WP
ns
250
350
250
350
--
--
ns
--
--
--
--
--
--
ns
M
IN 1
M
AX
U
NITS
ns
t
CS
09.15.15 Rev 4
All data sheets are subject to change without notice
5
©2015 Maxwell Technologies
All rights reserved
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