MODEL 7700 SERIES
Power Factor Correction
Power Module
NEW HIGHER POWER VERSION
MODELS/RANGE
7700B
7700-2A
FEATURES AND BENEFITS
1,500 Watts / 3,000 Watts
2,000 Watts / 4,000 Watts
• Module contains all power components necessary to provide power factor correction in a switching power supply.
- Rectifier bridge with SCRs for inrush current limiting
- Ultrafast platinum output diode
- 500V .1Ω Max. FET (7700B)
- Low gate charge, 500V, .0675Ω max. FET (7700-2A)
• Provides optimum use of available line current
• Allows power supply to meet harmonic requirement
• Module design reduces cost of heat sink
• Saves significant space and assembly time
• Low cost
• Internal temperature sensing
• Replaces up to 10 each TO-220 or TO-247 discrete power semiconductors
• Custom module versions available to meet specific requirements such as:
- Motor drives
- Power servo amplifiers
- Solenoid drivers
- Solid state relays
- 3 phase rectifier bridges
APPLICATIONS
7
Designed to optimally facilitate a boost type power
factor correction (PFC) system for designs with up to
36A rms input current.
Specifications subject to change without notice.
Standard applications include switching power supplies
from 1,000 watts to 4,000 watts with line voltages up to
300 V rms.
7-19
Model 7700 Series
ELECTRICAL CHARACTERISTICS
Parameter
MOS FET
Continuous Drain Current
Symbol
I
D
Conditions
1
T
C
= 25°C
T
C
= 100°C
Model
B
-2A
B
-2A
B
-2A
B
-2A
B
-2A
B
-2A
B, -2A
B, -2A
B
-2A
B, -2A
B, -2A
B
B
B
-2A
-2A
-2A
B
-2A
B
-2A
B
-2A
B
-2A
B
-2A
B
-2A
B, -2A
B
-2A
Min.
Typ.
Max.
56
80
34.8
48
224
320
760
960
19
28
8.7
20
±30
100
2.8
2.7
4.0
±400
600
80
320
480
128
196
56
80
224
320
1.4
1.8
810
860
28.8
39.6
Units
A
A
A
A
A
A
mJ
mJ
mJ
mJ
A
A
V
µA
V
V
V
nA
nC
nC
nC
nC
nC
nC
A
A
A
A
V
V
ns
ns
ns
ns
Ω
Ω
°C
°C/W
°C/W
Pulsed Drain Current
I
DM
Single Pulse Avalanche Energy E
AS
Repetitive Avalanche Energy
Avalanche Current
Gate to Source Voltage
Leakage Current
Drain to Source ON Voltage
Gate Threshold Voltage
Gate Leakage Current
Total Gate Charge
Gate Source Charge
Gate Drain (Miller) Charge
Total Gate Charge
Gate Source Charge
Gate Drain (Miller) Charge
Continous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time
(Body Diode)
Reverse Recovery Charge
(Body Diode)
Internal Gate Resistor
Junction Temperature
Thermal Resistance
E
AR
I
AR
V
GS
I
DSS
V
DS(ON)
V
GS(TH)
I
GSS
Qg
Qgs
Qgd
Qg
Qgs
Qgd
I
S
I
SM
V
SD
trr
Qrr
R
G
T
J
R
THJC
I
S
I
S
I
F
I
F
I
F
I
F
= 56A, V
GS
= 0V
= 80A, V
GS
= 0V
= 56A, di/dt = 400Aµs
= 80A, di/dt = 400Aµs
= 56A, di/dt = 400Aµs
= 80A, di/dt = 400Aµs
V
GS
= 0V, V
DS
= 500V
I
C =
28A, V
GS
= 10V
V
DS
= V
GS,
I
D
= 1mA
V
GS
±20V
I
D
= 56A, V
DS
= 400V
V
GS
= 10V
I
D
= 80A, V
DS
= 400V
V
GS
= 10V
1.5
1.0
2.0
0.4
0.5
1.25
0.25
150
0.20
.15
.025
.20
7-20
Model 7700 Series
ELECTRICAL CHARACTERISTICS
Parameter
SCRS
Average On Current
RMS On Current
(As AC switch)
Peak Repetitive Off Voltage
Symbol
I
T(AV)
I
RMS
Conditions
1
T
C
= 75°C, 180° half
sine wave
Model
B
-2A
B
-2A
B
-2A
B
-2A
B
-2A
B
-2A
B, -2A
B, -2A
B, -2A
B, -2A
B, -2A
B, -2A
B
-2A
B
-2A
B, -2A
B
-2A
Min.
Typ.
Max.
20
35
30
55
600
800
300
400
25
300
1.6
1.6
3.5
1.5
1.5
60
120
35
100
100
Units
A
A
A
A
V
V
A
A
µA
µA
V
V
V
V
V
mA
mA
mA
mA
mA
Ω
Ω
°C
°C/W
°C/W
A
A
V
V
A
A
µA
µA
V
V
°C
°C/W
°C/W
V
RRM/
V
DRM
Peak One Cycle Non-Repetitive I
TSM
Surge Current
Reverse and Direct Leakage
I
R
/I
D
Current
On Voltage
V
T
Gate Trigger Voltage
(Includes drop across R
G
)
Gate Trigger Current
(Each SCR Individually)
Holding Current
Internal Gate Resistor
Junction Temperature
Thermal Resistance
Bridge Diodes
Average Forward Current
Peak Repetitive Reverse
Voltage
Peak One Cycle Non-Repetitive
Surge Current
Reverse Leakage Current
Forward Voltage
Junction Temperature
Thermal Resistance
V
GT
T
J
= T
J
Max., t = 10ms
(50 Hz), sine
V
R
= V
RRM,
V
D
= V
DRM
I
T
= 25A
I
T
= 45A
V
D
= 6V, 22Ω
V
D
= 6V, 22Ω. T
J
= -40°C
V
D
= 6V, 22Ω. T
J
= 125°C
V
D
= 6V, 22Ω
V
D
= 6V, 22Ω. T
J
= -40°C
V
D
= 6V, 22Ω. T
J
= 125°C
(Each SCR Individually)
Connected to each SCR
V
GT
0.5
0.5
0.2
0.3
0.1
5
10
2
I
H
R
G
T
j
R
thjc
10
10
150
1.4
0.7
2.0
1.0
20
40
600
800
300
400
100
300
1.2
1.2
150
1.5
1.0
1.8
1.2
I
F(AV)
V
RRM
I
FSM
I
R/
V
F
T
J
R
THJC
T
C
= 105°C, 180°, half
sine wave
T
J
= T
J
Max., t = 10ms
(50 Hz), sine
V
R
= V
RRM
I
F
= 25A
I
F
= 40A
B
-2A
B
-2A
B
-2A
B
-2A
B
-2A
B, -2A
B
-2A
7
0.5
0.5
7-21
Model 7700 Series
嵌入式系统
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