PD - 95813
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
Product Summary
Part Number Radiation Level R
DS(on)
IRHLUB770Z4 100K Rads (Si) 0.55Ω
IRHLUB730Z4 300K Rads (Si) 0.55Ω
IRHLUB740Z4 600K Rads (Si)
0.55Ω
IRHLUB780Z4 1000K Rads (Si) 0.55Ω
I
D
0.8A
0.8A
0.8A
0.8A
IRHLUB770Z4
60V, N-CHANNEL
c
TECHNOLOGY
UB
International Rectifier’s R7
TM
Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLUB7970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C
Continuous Drain Current
0.8
0.5
3.2
0.6
0.0045
±10
2.0
0.8
0.06
4.0
-55 to 150
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
➁
IAR
EAR
dv/dt
TJ
T STG
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
43 (Typical)
mg
For footnotes refer to the last page
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1
02/02/04
IRHLUB770Z4
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
Min
60
Typ Max Units
—
0.07
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.4
—
—
0.55
2.0
—
1.0
10
100
-100
3.6
1.5
1.8
8.0
10
26
10
—
V
V/°C
Ω
V
S( )
µA
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 0.5A
➃
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
166
42
3.5
12
—
—
—
—
pF
Ω
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
0.8
3.2
1.2
70
75
A
V
ns
nC
T
j
= 25°C, IS = 0.8A, VGS = 0V
➃
Tj = 25°C, IF = 0.8A, di/dt
≤
100A/µs
VDD
≤
25V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJA
Junction-to-Case
Min Typ Max Units
—
—
220
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
Ω
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
1.0
g fs
Forward Transconductance
0.23
IDSS
Zero Gate Voltage Drain Current
—
—
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 0.5A
➃
VDS= 48V ,VGS= 0V
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 0.8A
VDS = 30V
VDD = 30V, ID = 0.8A,
VGS = 4.5V, RG = 24Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 5.0MHz, open drain
Test Conditions
Test Conditions
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Radiation Characteristics
Pre-Irradiation
IRHLUB770Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-39)
Static Drain-to-Source
➃
On-State Resistance (UB)
Diode Forward Voltage
➃
Up to 600K Rads(Si)
1
1000K Rads(Si)
2
Units
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10 V
V
DS
= 48V, V
GS
=0V
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 0V, IS = 0.8A
Min
60
1.0
—
—
—
—
—
—
Max
—
2.0
100
-100
1.0
0.55
0.55
1.2
Min
60
1.0
—
—
—
—
—
—
Max
—
2.0
100
-100
10
0.55
0.55
1.2
V
nA
µA
Ω
Ω
V
1. Part numbers IRHLUB770Z4, IRHLUB730Z4, IRHLUB740Z4
2. Part number IRHLUB780Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
(MeV/(mg/cm2))
Br
I
Au
37.3
59.9
82.3
Energy
(MeV)
285
345
357
Range
(µm)
36.8
32.7
28.5
0V
60
60
60
-2V
60
60
60
-4V
60
60
60
-5V
60
60
60
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-6V
60
60
-
-7V
35
20
-
-8V
30
15
-
-10V
20
-
-
70
60
50
40
30
20
10
0
0
-2
-4
-6
VGS
-8
-10
-12
Br
I
Au
For footnotes refer to the last page
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VDS
Fig a.
Single Event Effect, Safe Operating Area
3
IRHLUB770Z4
Pre-Irradiation
10
ID, Drain-to-Source Current (A)
1
ID, Drain-to-Source Current (A)
VGS
TOP
15V
10V
5.0V
3.5V
3.0V
2.5V
2.25V
BOTTOM 2.0V
10
VGS
15V
10V
5.0V
3.5V
3.0V
2.5V
2.25V
BOTTOM 2.0V
TOP
1
0.1
2.0V
2.0V
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.01
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 0.8A
ID, Drain-to-Source Current (A)
1.5
T J = 150°C
1
T J = 25°C
1.0
0.5
0.1
1.5
2
VDS = 25V
15
60µs PULSE WIDTH
2.5
3
3.5
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHLUB770Z4
250
V
GS
, Gate-to-Source Voltage (V)
200
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
12
I
D
= 0.8A
10
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
C, Capacitance (pF)
Ciss
8
150
C
oss
100
6
4
50
2
C
rss
0
1
10
100
0
0
1
2
FOR TEST CIRCUIT
SEE FIGURE 13
4
5
6
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
10
ISD , Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1
1
TJ = 150°C
T J = 25°C
100µs
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
1ms
10ms
0.1
0.4
0.6
0.8
1.0
1.2
VGS = 0V
1.4
1.6
0.01
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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