LAB
MECHANICAL DATA
Dimensions in mm
SEME
BUL54A–SM
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
0.25
3.5
3.0
11.5
2.0
3.5
15.8
1.5
1
3
2
8.5
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING (t
f
= 40ns)
• EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL OPTIONS
9.0
4.6
FEATURES
• Multi–base design for efficient energy
distribution across the chip resulting in
significantly improved switching and energy
ratings across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
TO220 Ceramic Surface Mount Package
Pad 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
R
th
Semelab plc.
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Derate above 25°C when used on efficient heatsink
Operating and Storage Temperature Range
Thermal Resistance Junction – Case
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1000V
500V
10V
2A
4A
0.8A
35W
0.2W/°C
–65 to 200°C
3.5°C/W
Prelim. 6/94
LAB
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEO*
I
CBO*
I
EBO*
SEME
BUL54A–SM
Test Conditions
Min.
500
1000
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 100mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Emitter Cut–Off Current
Collector – Base Cut–Off Current
Emitter Cut–Off Current
I
C
= 1mA
I
E
= 1mA
I
B
= 0
I
E
= 0
I
C
= 0
I
C
= 100mA
I
C
= 0
V
CC
= 500V
V
CB
= 1000V
T
C
= 125°C
V
EB
= 5V
T
C
= 125°C
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
T
C
= 125°C
I
C
= 100mA
I
B
= 20mA
I
B
= 100mA
I
B
= 200mA
I
B
= 100mA
I
B
= 200mA
V
CE
= 4V
V
CE
= 4V
f = 1MHz
V
100
10
100
10
100
µA
µA
µA
10
20
12
5
4
40
18
8
7
0.05
0.15
0.3
0.8
0.9
0.8
0.1
0.2
0.5
1.0
1.1
1.0
V
V
V
—
h
FE*
DC Current Gain
I
C
= 500mA
I
C
= 1A
V
CE(sat)*
Collector – Emitter Saturation Voltage I
C
= 500mA
I
C
= 1A
I
C
= 500mA
I
C
= 1A
I
C
= 500mA
I
C
= 100µA
f = 10MHz
V
CB
= 20V
I
E
= 0
V
CE
= 50V
V
BE(sat)*
V
BE(on)*
Base – Emitter Saturation Voltage
Base – Emitter On Voltage
DYNAMIC CHARACTERISTICS
f
T
C
ob
Transition Frequency
Output Capacitance
SECOND BREAKDOWN
Second Breakdown Collector Current
20
20
35
MHz
pF
I
S/B
t
on
t
s
t
f
t = 1s
0.8
0.08
2
0.04
0.2
4
0.1
A
SWITCHING CHARACTERISTICS (resistive load)
On Time
V
CC
= 150V
Storage Time
I
B1
= 0.2A
Fall Time
I
C
= 1A
I
B2
= –0.4A
µs
* Pulse test t
p
= 300µs ,
δ ≤
2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 6/94
下载中心专版
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
