PD - 91432C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number
IRHNA7264SE
Radiation Level R
DS(on)
100K Rads (Si)
0.11Ω
I
D
34A
IRHNA7264SE
250V, N-CHANNEL
RAD Hard HEXFET
TECHNOLOGY
™
®
SMD-2
International Rectifier’s RADHard
TM
HEXFET
®
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
34
21
136
300
2.4
±20
500
34
30
2.5
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
-55 to 150
C
300 (for 5 sec.)
3.3 (Typical)
g
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1
5/31/01
IRHNA7264SE
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
250
—
—
—
2.5
10
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.32
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.110
0.123
4.5
—
50
250
100
-100
220
50
110
35
180
100
120
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 21A
➃
VGS = 12V, ID = 34A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 21A
➃
VDS= 200V ,VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 34A
VDS = 125V
VDD =125V, ID =34A,
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of drain
pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4000
1300
480
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
34
136
1.4
700
16
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = 34A, VGS = 0V
➃
Tj = 25°C, IF = 34A, di/dt
≤
100A/µs
VDD
≤
50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ M a x Units
—
—
—
1.6
0.42
—
°C/W
Test Conditions
Soldered to a 1 inch square clad PC board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Pre-Irradiation
IRHNA7264SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
100K Rads (Si)
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 200V, V
GS
=0V
V
GS
= 12V, I
D
= 21A
V
GS
= 12V, I
D
= 21A
V
GS
= 0V, I
D
= 34A
Min
250
2.0
—
—
—
—
—
—
Max
—
4.5
100
-100
50
0.11
0.11
1.4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm
2
))
28
36.8
Energy
(MeV)
285
305
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V
43
250
250
250
39
250
250
250
@V
GS
=-15V @V
GS
=-20V
250
250
225
210
300
250
200
VDS
150
100
50
0
0
-5
-10
VGS
-15
-20
Cu
Br
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA7264SE
Pre-Irradiation
1000
I
D
, Drain-to-Source Current (A)
100
10
1
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
0.1
5.0V
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
5.0V
1
0.1
1
0.01
0.1
20µs PULSE WIDTH
T = 150 C
J
°
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
T
J
= 150
°
C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 34A
I
D
, Drain-to-Source Current (A)
2.5
2.0
T
J
= 25
°
C
1
1.5
1.0
0.1
5
6
7
8
V DS = 50V
20µs PULSE WIDTH
10
11
9
12
0.5
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNA7264SE
8000
V
GS
, Gate-to-Source Voltage (V)
C, Capacitance (pF)
6000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 31A
16
V
DS
= 125V
C
iss
4000
12
C
oss
8
2000
C
rss
4
0
1
10
100
0
0
40
80
FOR TEST CIRCUIT
SEE FIGURE 13
120
160
200
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
I
D
, Drain Current (A)
100
10us
T
J
= 150
°
C
10
100us
10
1ms
T
J
= 25
°
C
V
GS
= 0 V
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
1
0.2
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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