PD-97180
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level
IRHE9110
100K Rads (Si)
IRHE93110
300K Rads (Si)
R
DS(on)
I
D
1.1Ω
-2.3A
1.1Ω
-2.3A
IRHE9110
100V - P CHANNEL
RAD-Hard
TM
HEXFET
®
TECHNOLOGY
LCC - 18
International Rectifier’s RAD-Hard
T M
HEXFET
®
technology provides high performance power MOSFETs
for space applications. This technology has over a
decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC=25°C
Continuous Drain Current
ID @ VGS = -12V, TC=100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 (for 5s)
0.42 (Typical)
-2.3
-1.5
-9.2
15
0.1
±20
75
-2.3
1.5
-12.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
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1
07/11/07
IRHE9110
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -1.5A
Ã
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -1.5A
Ã
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -2.3A
VDS = -50V
VDD = -50V, ID = -2.3A,
VGS = -12V, RG = 7.5Ω
BVDSS
Drain-to-Source Breakdown Voltage
-100
—
—
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
-0.094 —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
—
1.1
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
—
-4.0
g fs
Forward Transconductance
0.7
—
—
IDSS
Zero Gate Voltage Drain Current
—
—
-25
—
—
-250
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
-100
100
16
4.3
3.3
21
17
32
32
—
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
f = 1.0MHz, open drain
C iss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
290
94
13
20.5
—
—
—
pF
Ω
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-2.3
-9.2
2.6
138
520
Test Conditions
A
V
nS
nC
T
j
= 25°C, IS = -2.3A, VGS = 0V
Ã
Tj = 25°C, IF = -2.3A, di/dt
≤
-100A/µs
VDD
≤
-25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJPCB
RthJA
Junction-to-Case
Junction-to-PC Board
Junction-to-Air
Min Typ Max
—
—
—
19
8.3
—
75
Units
°C/W
Test Conditions
Solder to a copper clad PC Board
Typical Socket
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHE9110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Diode Forward Voltage
Ã
100K Rads(Si)
1
Min
Max
-100
- 2.0
—
—
—
—
—
—
- 4.0
-100
100
-25
1.06
-2.6
300K Rads (Si)
2
Units
Min
Max
-100
-2.0
—
—
—
—
—
—
-5.0
-100
100
-25
1.06
-2.6
V
nA
µA
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
= -80V, V
GS
= 0V
V
GS
= -12V, I
D
= -1.5A
V
GS
= 0V, I
S
= -2.3A
1. Part number IRHE9110
2. Part number IRHE93110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
I
LET
MeV/(mg/cm
2
))
28
36.8
59.8
Energy
(MeV)
285
305
343
Range
(µm)
43
39
32.6
V
DS(V)
@
V
GS
=0V @
V
GS
=5V @
V
GS
=10V @
V
GS
=15V @
V
GS
=20V
-100
-100
-60
-100
-100
—
-100
-70
—
-70
-50
—
-60
-40
—
-120
-100
-80
VDS
-60
-40
-20
0
0
5
10
VGS
15
20
Cu
Br
I
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHE9110
Pre-Irradiation
10
10
-I D, Drain-to-Source Current (A)
1
-5.0V
-I D, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
1
-5.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
RDS(on) , Drain-to-Source On Resistance
2.5
T J = 25°C
-I D, Drain-to-Source Current (A)
ID = -2.3A
2.0
T J = 150°C
(Normalized)
1.5
1.0
VDS = -50V
60µs PULSE WIDTH
1.0
5
6
7
8
9
10 11 12 13 14 15
-VGS, Gate-to-Source Voltage (V)
0.5
VGS = -12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHE9110
500
-VGS, Gate-to-Source Voltage (V)
400
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
ID = -2.3A
16
VDS = -80V
VDS = -50V
VDS = -20V
C, Capacitance (pF)
300
Ciss
12
200
Coss
8
100
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
2
4
6
8
10
12
14
Crss
0
1
10
100
-VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
1
T J = 150°C
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
T J = 25°C
100µs
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
0.1
1ms
10ms
VGS = 0V
0.01
0
0.5
1
1.5
2
2.5
3
3.5
4
-V SD , Source-to-Drain Voltage (V)
0.1
1000
-V DS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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