203252A • Isolink Proprietary Information • Products and Product Information are Subject to Change Without Notice. • October 7, 2014
1
DATA SHEET • SMV2019 TO SMV2023 SERIES: HERMETIC CERAMIC PACKAGED SILICON HYPERABRUPT JUNCTION VARACTORS
Table 1. SMV2019 to SMV2023 Absolute Maximum Ratings (Note 1)
Parameter
Power dissipation
Reverse voltage
Forward current
Operating temperature
Storage temperature
P
DIS
V
R
I
F
T
OP
T
STG
–55
–65
Symbol
Minimum
Typical
Maximum
250
22
100
+150
+200
Units
mW
V
mA
C
C
Note 1:
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other
parameters set at or below their nominal value.
CAUTION:
Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device
must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body
or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times.
Table 2. SMV2019 to SMV2023 Electrical Specifications (Note 1)
(T
OP
= +25
C,
C
J
Measured at 1 MHz, Unless Otherwise Noted)
Total
Capacitance
(C
T)
@ 0 V
(pF)
Part Number
SMV2019-203
SMV2019-210
SMV2019-219
SMV2019-240
SMV2020-203
SMV2020-210
SMV2020-219
SMV2020-240
SMV2021-203
SMV2021-210
SMV2021-219
SMV2021-240
SMV2022-203
SMV2022-210
SMV2022-219
SMV2022-240
SMV2023-203
SMV2023-210
SMV2023-219
SMV2023-240
Typical
2.25
2.25
2.25
2.25
3.14
3.14
3.14
3.14
4.48
4.48
4.48
4.48
7.08
7.08
7.08
7.08
10.76
10.76
10.76
10.76
Total Capacitance
(C
T)
@ 4 V
(pF)
Minimum
0.81
0.89
0.77
0.82
1.26
1.34
1.22
1.27
1.71
1.79
1.67
1.72
2.61
2.69
2.57
2.62
4.41
4.49
4.38
4.42
Maximum
1.03
1.11
1.00
1.04
1.58
1.66
1.55
1.59
2.13
2.21
2.10
2.14
3.23
3.31
3.20
3.24
5.43
5.51
5.43
5.44
Total Capacitance
(C
T)
@ 20 V
(pF)
Minimum
0.26
0.34
0.22
0.27
0.36
0.44
0.32
0.37
0.45
0.53
0.41
0.46
0.61
0.69
0.57
0.62
0.91
0.99
0.88
0.92
Maximum
0.38
0.46
0.35
0.39
0.48
0.56
0.45
0.49
0.59
0.67
0.56
0.60
0.83
0.91
0.80
0.84
1.23
1.31
1.23
1.24
Q
@ 4 V,
(500 MHz)
(Note 2)
Minimum
500
500
500
500
500
500
500
500
500
500
500
500
400
400
400
400
400
400
400
400
Series
Resistance ( R
S
)
@ 4 V, f = 1 GHz
(Ω)
Typical
4.8
4.8
4.8
4.8
4.1
4.1
4.1
4.1
2.8
2.8
2.8
2.8
2.2
2.2
2.2
2.2
1.4
1.4
1.4
1.4
Reverse
Voltage
@ 17.6 V
(nA)
(Note 3)
Maximum
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
Note 1:
Performance is guaranteed only under the conditions listed in this table and is not guaranteed over the full operating or storage temperature ranges. Exceeding any of the conditions
listed here may result in permanent damage to the device. Operation at elevated temperatures may reduce reliability of the device.
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